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| AOU460 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU460 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU460 is Pb-free (meets ROHS & Sony 259 specifications). AOU460L is a Green Product ordering option. AOU460 and AOU460L are electrically identical. TO-251 D Features VDS (V) = 25V ID = 25 A (VGS = 10V) RDS(ON) < 14 m (VGS = 10V) RDS(ON) < 24 m (VGS = 4.5V) Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 20 25 25 70 20 20 30 15 -55 to 175 Units V V A A mJ W C TC=25C TC=100C ID IDM IAR EAR PD TJ, TSTG TC=25C Repetitive avalanche energy 0.1mH Power Dissipation B TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RJA RJC Typ 41 3.6 Max 50 5 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOU460 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 70 12 17.7 20 18.9 0.74 1 25 830 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 224 127 0.93 15.3 VGS=10V, VDS=12.5V, ID=20A 7.4 2.7 4.3 8 VGS=10V, VDS=12.5V, RL=0.625, RGEN=3 IF=20A, dI/dt=100A/s 11.7 30 11 23.5 12.8 30 1.5 19 9 1000 24 14 1.8 Min 25 0.01 1 5 100 2.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Rev0:July2005 Alpha & Omega Semiconductor, Ltd. AOU460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 10V 60 ID (A) 6V 4.5V ID(A) 40 20 25C 20 VGS=3V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 0 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 10 30 125C 40 VDS=5V 25 VGS=4.5V 20 RDS(ON) (m) 1.6 Normalized On-Resistance VGS=10V, 20A 1.4 15 1.2 VGS=4.5V,20A 1 10 VGS=10V 5 0 5 10 15 20 25 30 35 40 0.8 0 25 50 75 100 125 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40 35 30 25 20 15 25C 10 2.00 4.00 6.00 8.00 10.00 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage IS (A) ID=20A 1.0E+02 1.0E+01 1.0E+00 125C RDS(ON) (m) 1.0E-01 1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C Alpha & Omega Semiconductor, Ltd. AOU460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=12.5V ID=20A 1400 1200 Capacitance (pF) 1000 800 600 400 200 Crss 0 0 0 2 4 6 8 10 12 14 16 Qg (nC) Figure 7: Gate-Charge Characteristics 100 RDS(ON) limited 10 ID (Amps) DC 1ms 10s 100s Power (W) 160 120 80 40 TJ(Max)=175C, TA=25C 0.1 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) TJ(Max)=175C TA=25C 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics Coss Ciss 8 VGS (Volts) 6 4 2 200 1 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton T 10 100 0.01 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 ID(A), Peak Avalanche Current 25 20 15 10 5 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability TA=25C 35 Power Dissipation (W) L ID tA = BV - VDD 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) 30 25 Current rating ID(A) 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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