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| 7MBR10SA140 IGBT MODULE (S series) 1400V / 10A / PIM IGBT Modules Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Applications * Inverter for Motoe Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Inverter Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso Condition Rating 1400 20 15 10 30 20 10 75 1400 20 15 10 30 20 75 1400 1600 10 105 55 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 Continuous 1ms Collector current Tc=25C Tc=75C Tc=25C Tc=75C Unit V V A A A W V V A A W V V A A A 2s C C V N*m Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1 device Continuous 1ms 1 device Tc=25C Tc=75C Tc=25C Tc=75C Converter 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter 7MBR10SA140 Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B Condition VCE=1400V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=10mA VGE=15V, Ic=10A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=800V IC=10A VGE=15V RG=120 IF=10A chip terminal Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.2 2.25 2.7 1200 0.35 0.25 0.1 0.45 0.08 2.4 2.45 1.2 0.6 1.0 0.3 V 3.3 0.35 1.0 0.2 2.7 1.2 0.6 1.0 0.3 1.0 1.5 1.0 520 3450 s mA A V s Unit mA A V V pF s Min. Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake Turn-on time Turn-off time Reverse current Forward on voltage Reverse current Resistance B value IF=10A VCES=1400V, VGE=0V VCE=0V, VGE=20V IC=10A, VGE=15V chip terminal VCC=800V IC=10A VGE=15V RG=120 VR=1400V IF=10A chip terminal VR=1600V T=25C T=100C T=25/50C 2.2 2.3 0.35 0.25 0.45 0.08 1.1 1.2 5000 495 3375 Converter mA V mA K 465 3305 Thermal resistance Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Characteristics Typ. Max. 1.67 2.78 1.67 1.85 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [Brake] 22(P1) [Inverter] [Thermistor] 8 20(Gu) 18(Gv) 16(Gw) 9 1(R) 2(S) 3(T) 7(B) 19(Eu) 4(U) 17(Ev) 5(V) 15(Ew) 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 10(En) 23(N) 24(N1) IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 7MBR10SA140 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) 25 25 20 15V VGE= 20V 12V 20 15V 12V VGE= 20V Collector current : Ic [ A ] Collector current : Ic [ A ] 15 10V 15 10V 10 10 5 5 8V 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] 8V 0 [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 25 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) Tj= 25C 20 Tj= 125C 15 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 10 4 Ic= 20A 2 Ic= 10A Ic= 5A 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 5000 1000 [ Inverter ] Dynamic Gate charge (typ.) Vcc=800V, Ic=10A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 1000 Cies 600 15 500 400 10 Coes 200 5 100 50 0 5 10 15 20 25 30 Collector - Emitter voltage : VCE [ V ] Cres 35 0 0 20 40 60 80 Gate charge : Qg [ nC ] 0 100 Gate - Emitter voltage : VGE [ V ] IGBT Module 7MBR10SA140 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg=120ohm, Tj= 25C 1000 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg=120ohm, Tj= 125C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton ton tr tr tf 100 100 tf 50 0 5 10 Collector current : Ic [ A ] 15 20 50 0 5 10 Collector current : Ic [ A ] 15 20 [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=10A, VGE=15V, Tj= 25C 5000 5 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg=120ohm Switching loss : Eon, Eoff, Err [ mJ/pulse ] ton toff Switching time : ton, tr, toff, tf [ nsec ] 4 Eon(125C) tr 1000 3 Eon(25C) 500 Eoff(125C) 2 Eoff(25C) 1 Err(125C) Err(25C) 100 tf 50 50 0 100 500 Gate resistance : Rg [ohm] 1000 2000 0 5 10 Collector current : Ic [ A ] 15 20 [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=10A, VGE=15V, Tj= 125C 8 Eon 25 [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>120ohm, Tj=<125C Switching loss : Eon, Eoff, Err [ mJ/pulse ] 20 6 Collector current : Ic [ A ] 2000 15 4 10 Eoff 2 5 Err 0 50 0 100 500 Gate resistance : Rg [ohm] 1000 0 200 400 600 800 1000 1200 1400 1600 1800 Collector - Emitter voltage : VCE [ V ] IGBT Module 7MBR10SA140 [ Inverter ] Forward current vs. Forward on voltage (typ.) 25 300 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=800V, VGE=15V, Rg=120ohm 20 Tj=125C Tj=25C trr(125C) 100 trr(25C) 50 15 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 10 10 Irr(125C) Irr(25C) 5 0 0 1 2 3 4 Forward on voltage : VF [ V ] 1 0 5 10 Forward current : IF [ A ] 15 20 [ Converter ] Forward current vs. Forward on voltage (typ.) 25 20 Tj= 25C Tj= 125C Forward current : IF [ A ] 15 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] Transient thermal resistance 10 200 100 [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(j-c) [ C/W ] FWD[Inverter] 1 IGBT [Inverter,Brake] Resistance : R [ k ohm] 1 Conv. Diode 10 1 0.1 0.001 0.01 0.1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] Temperature [C] IGBT Module 7MBR10SA140 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 25 25 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) 20 VGE= 20V 15V 12V 20 15V 12V VGE= 20V Collector current : Ic [ A ] 15 10V Collector current : Ic [ A ] 15 10V 10 10 5 5 8V 0 0 1 2 3 4 5 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] 8V 0 [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 25 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 15 Collector - Emitter voltage : VCE [ V ] 20 Tj= 25C Tj= 125C 8 Collector current : Ic [ A ] 6 10 4 Ic= 20A 2 Ic= 10A Ic= 5A 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 5000 1000 [ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=10A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 1000 Cies 600 15 500 400 10 200 5 100 Coes Cres 50 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 20 40 60 80 Gate charge : Qg [ nC ] 0 100 Gate - Emitter voltage : VGE [ V ] IGBT Module Outline Drawings, mm 7MBR10SA140 mass : 180g |
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