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79C0832
8 Megabit (256K x 32-Bit) EEPROM MCM
Memory
FEATURES:
* * * * 256k x 32-bit EEPROM MCM RAD-PAK(R) radiation-hardened against natural space radiation Total dose hardness: - >100 krad (Si) - Dependent upon orbit Excellent Single event effects - SELTH > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode - SEU = 18 MeV/mg/cm2 write mode High endurance - 10,000 cycles/byte (Page Programming Mode) - 10 year data retention Page Write Mode: 1 to 8 X 128 byte page High Speed: - 150 and 200 ns maximum access times Automatic programming - 10 ms automatic Page/Byte write Low power dissipation - 160 mW/MHz active current - 880 W standby current
DESCRIPTION:
Maxwell Technologies' 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies' patented radiation-hardened RAD-PAK(R) MCM packaging technology, the 79C0832 is the first radiation-hardened 8 megabit MCM EEPROM for space application. The 79C0832 uses eight 1 Megabit high speed CMOS die to yield an 8 megabit product. The 79C0832 is capable of in-system electrical byte and page programmability. It has a 128 x 8 byte page programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 79C0832, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm. Maxwell Technologies' patented RAD-PAK(R) packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Maxwell Technologies self-defined Class K.
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(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
(c)2005 Maxwell Technologies All rights reserved.
8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
Memory
TABLE 1. 79C0832 PINOUT DESCRIPTION
PIN 84-77, 29-37 48-55, 66-73, 96, 1-7, 18-25 61 41, 43 45 10, 17, 28, 40, 44, 58, 65, 76, 87, 93 8, 9, 11-16, 26, 27, 38, 42, 46, 56, 57, 59, 60, 62-64, 74, 75, 85, 86, 88-92, 94, 95 39 47 SYMBOL ADDR0 to ADDR16 I/O0 to I/O31 OE CE0-1 WE 5V GND DESCRIPTION Address Input Data Input/Output Output Enable Chip Enable 0 through 1 Write Enable Power Supply Ground
RDY/BUSY RES
Ready/Busy Reset
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
TABLE 2. 79C0832 ABSOLUTE MAXIMUM RATINGS
PARAMETER Supply Voltage Input Voltage Package Weight SYMBOL VCC VIN RP RT XP Thermal Impedance Operating Temperature Range Storage Temperature Range 1. VIN min = -3.0V for pulse width <50ns. FJC TOPR TSTG -55 -65 MIN -0.6 -0.51 45 38 TBD 3 TYP
79C0832
MAX 7.0 7.0 UNIT V V Grams
C/W
125 150
C C
TABLE 3. 79C0832 RECOMMENDED DC OPERATING CONDITIONS
PARAMETER Supply Voltage Input Voltage RES_PIN Operating Temperature Range 1. VIL min = -1.0V for pulse width < 50 ns SYMBOL VCC VIL VIH VH TOPR MIN 4.5 -0.31 2.2 VCC-0.5 -55 MAX 5.5 0.8 VCC +0.3 VCC +1 125 UNIT V V V V
C
Memory
TABLE 4. DELTA LIMITS1
PARAMETER ICC1A ICC1D ICC2A ILI - ADDR, CE, OE, WE VARIATION2 +/- 10 % +/- 10 % +/- 10 % +/- 10 %
+/- 10 % ILI - D0-D31 1. Parameters are measured and recorded per MIL-STD-883 for Class K devices 2. Specified value in Table 6
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
TABLE 5. 79C0832 CAPACITANCE
(TA = 25 C, f = 1 MHz) PARAMETER Input Capacitance : VIN = 0V1 SYMBOL CIN OE CIN WE CIN CE0-1 CIN A0-A16 CIN RES Output Capacitance: VOUT = 0V1 COut RDY/BSY CO ut D0-D31 1. Guaranteed by design. -MIN
79C0832
MAX 6 6 6 6 48 6 12 pF UNIT pF
TABLE 6. 79C0832 DC ELECTRICAL CHARACTERISTICS
(VCC = 5V 10%, TA = -55 TO +125C) PARAMETER Input Leakage Current1 A0-A16, CE,WE, OE Input Leakage Current D0-D31 Standby VCC Current1 TEST CONDITION VIN = VCC VIN=VIH VIN=0V VIN=VCC ILI ILO ICC1A ICC1B ICC1C ICC1D ICC2A 1, 2, 3 --1, 2, 3 1, 2, 3 1, 2, 3 --SYMBOL ILI SUBGROUPS 1, 2, 3 MIN -MAX 10 2 2.22 1.12 4 4 80 4 45 25 60 UNITS
Memory
A
mA mA
A
A A mA mA mA mA
Output Leakage Current (VCC = 5.5V, VOUT = 5.5V/0.4V) CE = ADDR=WE=OE =VCC CE = VIH; ADDR=WE=OE =VCC CE = ADDR=WE=OE =VIH CE =VIH, ADDR=WE=OE =0V Operating VCC Current1,3 OE = 0V ADDR=WE=VCC IOUT = 0mA, CE Duty = 100%, Cycle = 1 us at VCC = 5.5V OE =ADDR=WE=0V IOUT = 0mA, CE Duty = 100%, Cycle = 1 us at VCC = 5.5V OE = 0V ADDR=WE=VCC IOUT = 0mA, CE Duty = 100%, Cycle = 150 ns at VCC = 5.5V OE =ADDR=WE=0V IOUT = 0mA, CE Duty = 100%, Cycle = 150 ns at VCC = 5.5V Input Voltage
ICC2B
1, 2, 3
--
85
mA
ICC2C
1, 2, 3
--
200
mA
ICC2D
1, 2, 3
225
mA
VIL VIH RES_PIN VH
1, 2, 3 2.2 VCC -0.5
0.8
V
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
TABLE 6. 79C0832 DC ELECTRICAL CHARACTERISTICS
(VCC = 5V 10%, TA = -55 TO +125C) PARAMETER Output Voltage TEST CONDITION SYMBOL SUBGROUPS MIN -2.4 3.15 VCC - 0.3V
79C0832
MAX 0.4 0.4 ---UNITS V V V V V
VOL Data Lines: VCCMin, IOL= 2.1mA 1, 2, 3 RDY/BSY_Line: VCC Min, IOL = 12mA VOL Data Lines: VCC Min, IOH = -400 A VOH RDY/BSY_Line: VCC Min, IOH = -12mA VOH All Outputs: VCCMin , IOH = -100uA 1. All Inputs are tied to VCC with a 5.5KW resistor, except for RES which is 30KW. 2. For RES ILI=800uA max. 3. Only one CE Active (Low)
TABLE 7. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1
(VCC = 5V 10%, TA = -55 TO +125C) PARAMETER Address Access Time CE = OE = VIL, WE = VIH -150 -200 Chip Enable Access Time OE = VIL, WE = VIH -150 -200 Output Enable Access TIme CE = VIL, WE = VIH -150 -200 Output Hold to Address Change CE = OE =VIL, WE = VIH -150 -200 Output Disable to High-Z 2 CE = VIL, WE = VIH -150 -200 CE = OE = VIL, WE = VIH -150 -200 RES to Output Delay CE = OE = VIL, WE = VIH3 -150 -200 SYMBOL tACC SUBGROUPS 9, 10, 11 --tCE 9, 10, 11 --tOE 9, 10, 11 0 0 tOH 9, 10, 11 0 0 9, 10, 11 tDF 0 0 tDFR 0 0 TRR 9, 10, 11 0 0 450 650 350 450 ns 50 60 ns ns --75 125 ns 150 200 ns 150 200 ns MIN MAX UNIT ns
Memory
1. Test conditions: input pulse levels = 0.4V to 2.4V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including scope and jig); reference levels for measuring timing = 0.8 V/1.8 V. 2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design.
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
TABLE 8. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION
(VCC = 5V 10%, TA = -55 TO +125C) PARAMETER Address Setup Time -150 -200 Chip Enable to Write Setup Time (WE controlled) -150 -200 Write Pulse Width CE controlled -150 -200 WE controlled -150 -200 Address Hold Time -150 -200 Data Setup Time -150 -200 Data Hold Time -150 -200 Chip Enable Hold Time (WE controlled) -150 -200 Write Enable to Write Setup Time (CE controlled) -150 -200 Write Enable Hold Time (CE controlled) -150 -200 Output Enable to Write Setup Time -150 -200 Output Enable Hold Time -150 -200 Write Cycle Time 2 -150 -200 SYMBOL tAS SUBGROUPS 9, 10, 11 0 0 tCS 9, 10, 11 0 0 9, 10, 11 tCW 250 350 tWP 250 350 tAH 9, 10, 11 150 200 tDS 9, 10, 11 100 150 tDH 9, 10, 11 10 10 tCH 9, 10, 11 0 0 tWS 9, 10, 11 0 0 tWH 9, 10, 11 0 0 tOES 9, 10, 11 0 0 tOEH 9, 10, 11 0 0 tWC 9, 10, 11 --10 10 --ms --ns --ns --ns --ns --ns --ns --ns --ns --ns ns ----ns MIN 1 MAX UNITS ns
Memory
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
(VCC = 5V 10%, TA = -55 TO +125C) PARAMETER Data Latch Time -150 -200 Byte Load Window -150 -200 Byte Load Cycle -150 -200 Time to Device Busy -150 -200 Write Start Time 3 -150 -200 RES to Write Setup Time4 -150 -200 VCC to RES Setup Time4 -150 -200 1. Use this device in a longer cycle than this value. SYMBOL tDL SUBGROUPS 9, 10, 11 300 400 tBL 9, 10, 11 100 200 tBLC 9, 10, 11 .55 .95 tDB 9, 10, 11 120 170 tDW 9, 10, 11 150 250 tRP 9, 10, 11 100 200 tRES 9, 10, 11 1 3 MIN 1
79C0832
MAX --s --s 30 30 ns --ns --s --s --UNITS ns
TABLE 8. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION
Memory
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used. 4. Guaranteed by design.
TABLE 9. 79C0832 MODE SELECTION 1
PARAMETER Read Standby Write Deselect Write Inhibit Data Polling CE 2 VIL VIH VIL VIL X X VIL OE VIL X VIH VIH X VIL VIL WE VIH X VIL VIH VIH X VIH X I/O DOUT High-Z DIN High-Z --Data Out (I/O7) High-Z RES VH X VH VH X X VH VL RDY/BUSY VOH VOH VOH --> VOL VOH --VOL VOH
Program Reset X X 1. Refer to the recommended DC operating conditions. 2. For CE0-1 only one CE can be used ("on") at a time.
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
FIGURE 1. READ TIMING WAVEFORM
79C0832
Memory
FIGURE 2. BYTE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
79C0832
Memory
FIGURE 4. PAGE WRITE TIMING WAVEFORM (1) (WE CONTROLLED)
1) A7-A16 are Page Addresses and must be the same within a Page Write Operation.
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
FIGURE 5. PAGE WRITE TIMING WAVEFORM (2) (CE CONTROLLED)
1
79C0832
Memory
1) A7-A16 are Page Addresses and must be the same within a Page Write Operation.
FIGURE 6. DATA POLLING TIMING WAVEFORM
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM (1) (IN PROTECTION MODE)
FIGURE 8. SOFTWARE DATA PROTECTION WAVEFORM (2) (IN NON-PROTECTION MODE)
Memory
EEPROM APPLICATION NOTES
This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data integrity.
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle. Loading the first byte of data, the data load window opens 30 s for the second byte. In the same manner each additional byte of data can be loaded within 30 s of the preceding falling edge of either WE or CE. When CE and WE are kept high for 100 s after data input, the EEPROM enters the write mode automatically and the data input is written into the EEPROM.
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE.
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
Data Polling
79C0832
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal goes low (VOL) after the first write signal. At the end of the write cycle, the RDY/Busy returns to a high state ( VOH).
RES Signal
When RES is LOW (VL), the EEPROM cannot be read or programmed. The EEPROM data must be protected by keeping RES low when VCC is power on and off. RES should be high (VH) during read and programming operations.
Memory
Data Protection
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width more than 20ns on the control pins.
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
2. Data Protection at VCC on/off
79C0832
When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to RES pin.
3. RES Signal
RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn't finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data is input .
Memory
10ms
4. Software Data Protection Enable
The 79C0832 contains a software controlled write protection feature that allows the user to inhibit all write operations to the device. This is useful in protecting the device from unwanted write cycles due to uncontrollable circuit noise or inadvertent writes caused by minor bus contentions. Software data protection is enabled by writing the following data sequence to the EEPROM and allowing the write cycle period (tWC) of 10ms to elapse: .
Software Data Protection Enable Sequence Address
5555 AAAA or 2AAA 5555
Data
AA AA AA AA 55 55 55 55 A0 A0 A0 A0
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
5. Writing to the Memory with Software Data Protection Enabled
79C0832
To write to the device once Software protection is enabled, the enable sequence must precede the data to be written. This sequence allows the write to occur while at the same time keeping the software protection enabled
Sequence for Writing Data with Software Protection Enabled. Address
5555 AAAA or 2AAA 5555
Write Address(s)
Data
AA AA AA AA 55 55 55 55 A0 A0 A0 A0
Normal Data Input
Memory
6. Disabling Software Protection
Software data protection mode can be disabled by inputting the following 6 bytes sequence. Once the software protection sequence has been written, no data can be written to the memory until the write cycle (TWC) has elapsed.
Software Protection Disable Sequence Address
5555 AAAA or 2AAA 5555 5555 AAAA or 2AAA 5555
Data
AA AA AA AA 55 55 55 55 80 80 80 80
AA AA AA AA
55 55 55 55 20 20 20 20
Devices are shipped in the "unprotected" state, meaning that the contents of the memory can be changed as required by the user. After the software data protection is enabled, the device enters the Protect Mode where no further write commands have any effect on the memory contents.
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
Memory
96-PIN RAD-PAK(R) QUAD FLAT PACKAGE
SYMBOL MIN A b c D D1 e S1 L L1 L2 A1 N --2.485 --.152 .184 .010 --1.408 DIMENSION NOM .200 .012 .009 1.420 1.162 .050 .129 2.528 2.500 1.700 .165 96 .178 2.543 2.505 MAX .216 .013 .012 1.432
Note: All dimensions in inches
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
A1
79C0832
c
Pin #1 ID
S1
MAXWELL
TECHNOLOGIES
e
L2 b
D1 D(sq) L1(sq) L(sq)
Memory
A
96 PIN RAD-TOLERANT QUAD FLAT PACKAGE
SYMBOL MIN A b c D D1 e S1 L L1 L2 A1 N .152 -2.485 .167 .010 -1.408 DIMENSION NOM .183 .012 .009 1.420 1.162 .050 .129 2.528 2.500 1.700 .165 96 .178 2.543 2.505 MAX .199 .013 .012 1.432
Note: All dimensions in inches
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
Memory
96 PIN XRAY QUAD FLAT PACKAGE
SYMBOL MIN A b c D D1 e S1 L L1 L2 A1 N 3.000 2.985 2.090 .115 .200 .007 .009 1.690 DIMENSION NOM .222 .010 .009 1.707 1.150 0.050 .278 3.020 3.000 2.200 .130 96 3.040 3.005 2.210 .145 MAX .245 .013 .013 1.725
Note: All dimensions in inches
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
Important Notice:
79C0832
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies' products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies' liability shall be limited to replacement of defective parts.
Memory
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(c)2005 Maxwell Technologies All rights reserved
8 Megabit (256K x 32-Bit) EEPROM MCM
Product Ordering Options
79C0832
Model Number
79C0832
XX
Q
X
-XX
Feature Access Time
Option Details
15 = 150 ns 20 = 200 ns
Screening Flow
Multi Chip Module (MCM)1 K = Maxwell Self-Defined Class K H = Maxwell Self-Defined Class H I = Industrial (testing @ -55C, +25C, +125C) E = Engineering (testing @ +25C)
Memory
Package
Q = Quad Flat Pack
Radiation Feature
RP = RAD-PAK(R) package XP = Xray-Pak Package RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at
Base Product Nomenclature
8 Megabit (256K x 32-Bit) EEPROM MCM
1) Products are manufactureded and screened to Maxwell Technologies self-defined Class H and Class K flows.
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(c)2005 Maxwell Technologies All rights reserved

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