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28.0-31.0 GHz GaAs MMIC Power Amplifier
August 2005 - Rev 04-Aug-05
30MPA0562 Chip Device Layout
Features
Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband's three stage 28.0-31.0 GHz GaAs MMIC power amplifier has a small signal gain of 27.0 dB with +30.0 dBm saturated output power. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Pointto-Point Radio, LMDS, SATCOM and VSAT applications.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (S21) Reverse Isolation (S12) Saturated Output Power (Psat) 2 Drain Bias Voltage (Vd1,2,3) Gate Bias Voltage (Vg1,2,3) Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical) Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical) Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical)
(2) Measured using constant current.
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Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
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Min. 28.0 -1.0 -
Absolute Maximum Ratings
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Units GHz dB dB dB dB dB dBm VDC VDC mA mA mA
Typ. 10.0 10.0 27.0 +/-1.0 50.0 +30.0 +5.0 -0.7 100 150 400
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Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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+6.5 VDC 112,170,450 mA +0.3 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1
Max. 31.0 +6.0 0.0 112 170 450
Page 1 of 5
28.0-31.0 GHz GaAs MMIC Power Amplifier
August 2005 - Rev 04-Aug-05
30MPA0562
Power Amplifier Measurements
, Vd (V)=5, Pinr (dBm)=-10, RC=R10C12 , Vd (V)=5, Pinr (dBm)=-9, RC=R10C12
_0562: Pout (dBm) vs. Freq (GHz)
_30MPA0562_Sparameters_wafer sweep
32
, Vd (V)=5, Pinr (dBm)=-8, RC=R10C12 , Vd (V)=5, Pinr (dBm)=-7, RC=R10C12 , Vd (V)=5, Pinr (dBm)=-6, RC=R10C12 , Vd (V)=5, Pinr (dBm)=-4, RC=R10C12 , Vd (V)=5, Pinr (dBm)=-3, RC=R10C12 , Vd (V)=5, Pinr (dBm)=-2, RC=R10C12
28
27
26
25
24
23
22
21
20
26
27
28
29 30 31 Frequency (GHz)
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33
34
28
29
30 Freq (GHz)
_30MPA0562_S21_wafer sweep
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10
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0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 -85 -90
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz)
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0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz)
_30MPA0562_S11_wafer sweep
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
0 -2 -4 -6 -8 -10 -12 -14 -16 -18
-22
-20
-24 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz)
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz)
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_30MPA0562_S12_wafer sweep
_30MPA0562_S22_wafer sweep
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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31 32
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24
31
, Vd (V)=5, Pinr (dBm)=-1, RC=R10C12 , Vd (V)=5, Pinr (dBm)=0, RC=R10C12 , Vd (V)=5, Pinr (dBm)=1, RC=R10C12
30
, Vd (V)=5, Pinr (dBm)=2, RC=R10C12 , Vd (V)=5, Pinr (dBm)=3, RC=R10C12 , Vd (V)=5, Pinr (dBm)=4, RC=R10C12
29
, Vd (V)=5, Pinr (dBm)=5, RC=R10C12 , Vd (V)=5.5, Pinr (dBm)=-9, RC=R10C12 , Vd (V)=5.5, Pinr (dBm)=-8, RC=R10C12 , Vd (V)=5.5, Pinr (dBm)=-7, RC=R10C12 , Vd (V)=5.5, Pinr (dBm)=-6, RC=R10C12 , Vd (V)=5.5, Pinr (dBm)=-5, RC=R10C12 , Vd (V)=5.5, Pinr (dBm)=-4, RC=R10C12 , Vd (V)=5.5, Pinr (dBm)=-3, RC=R10C12 , Vd (V)=5.5, Pinr (dBm)=-2, RC=R10C12 , Vd (V)=5.5, Pinr (dBm)=-1, RC=R10C12 , Vd (V)=5.5, Pinr (dBm)=0, RC=R10C12 , Vd (V)=5.5, Pinr (dBm)=1, RC=R10C12 , Vd (V)=5.5, Pinr (dBm)=2, RC=R10C12 , Vd (V)=5.5, Pinr (dBm)=3, RC=R10C12 , Vd (V)=5.5, Pinr (dBm)=4, RC=R10C12 , Vd (V)=5.5, Pinr (dBm)=5, RC=R10C12 , Vd (V)=6, Pinr (dBm)=-10, RC=R10C11 , Vd (V)=6, Pinr (dBm)=-10, RC=R10C12 , Vd (V)=6, Pinr (dBm)=-10, RC=R11C14 , Vd (V)=6, Pinr (dBm)=-9, RC=R10C11 , Vd (V)=6, Pinr (dBm)=-9, RC=R10C12 , Vd (V)=6, Pinr (dBm)=-9, RC=R11C14 , Vd (V)=6, Pinr (dBm)=-8, RC=R10C11 , Vd (V)=6, Pinr (dBm)=-8, RC=R10C12 , Vd (V)=6, Pinr (dBm)=-8, RC=R11C14 , Vd (V)=6, Pinr (dBm)=-7, RC=R10C11 , Vd (V)=6, Pinr (dBm)=-7, RC=R10C12 , Vd (V)=6, Pinr (dBm)=-7, RC=R11C14 , Vd (V)=6, Pinr (dBm)=-6, RC=R10C11 , Vd (V)=6, Pinr (dBm)=-6, RC=R10C12 , Vd (V)=6, Pinr (dBm)=-5, RC=R10C11
Pout (dBm)
Page 2 of 5
28.0-31.0 GHz GaAs MMIC Power Amplifier
August 2005 - Rev 04-Aug-05
30MPA0562
Mechanical Drawing
0.384 (0.015) 1.380 (0.054) 0.788 (0.031) 1.188 (0.047) 1.588 (0.063) 1.988 (0.078) 2.414 (0.095)
2
3
4
5
6
7
0.657 (0.026)
1
0.0 0.0
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(Note: Engineering designator is 30MPA0562)
Bond Pad #1 (RF In) Bond Pad #2 (Vg1) Bond Pad #3 (Vd1) Bond Pad #4 (Vg2)
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Vg3
6
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 2.396 mg. Bond Pad #5 (Vd2) Bond Pad #6 (Vg3) Bond Pad #7 (Vd3) Bond Pad #8 (RF Out)
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Bias Arrangement
Vd1 Vg1
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Vd3
8
Bypass Capacitors - See App Note [2]
Vg2
Vd2
2
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3
4
5
7
RF In
1
RF Out
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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8 0.658 (0.026) 2.800 (0.110)
Page 3 of 5
28.0-31.0 GHz GaAs MMIC Power Amplifier
August 2005 - Rev 04-Aug-05
30MPA0562
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd3 at Vd(1,2,3)=5.0V with Id1=100mA, Id2=150mA,
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
55 deg Celsius 75 deg Celsius 95 deg Celsius
deg Celsius deg Celsius
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C/W C/W C/W
Backplate Temperature
Channel Temperature
Rth
MTTF Hours
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E+ E+ E+
FITs
E+ E+ E+
Bias Conditions: Vd1=Vd2=Vd3=5.0V, Id1=100mA, Id2=150mA, Id3=400mA
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deg Celsius
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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and Id3=400mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain current Id(total)=430 mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
Page 4 of 5
28.0-31.0 GHz GaAs MMIC Power Amplifier
August 2005 - Rev 04-Aug-05
Handling and Assembly Information
30MPA0562
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 5
Characteristic Data and Specifications are subject to change without notice. (c)2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
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Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C + 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
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ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
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Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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