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 2SK3597-01
FUJI POWER MOSFET
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol VDS VDSX *5 ID Tc=25C Ta=25C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25C Ta=25C Tch Tstg Ratings 200 170 45 4.3 ** 180 30 45 258.9 20 5 270 2.4 ** +150 -55 to +150 Unit V V A A A V A mJ kV/s kV/s W Foot Print Pattern
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source S2 : Source
C C ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Ta=25C *1 L=205H, Vcc=48V,Tch=25C, See to Avalanche Energy Graph *2 Tch <150C = *3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C *4 VDS < 200V *5 VGS=-30V = = = =
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=200V VGS=0V VDS=160V VGS=0V VGS=30V VDS=0V ID=15A VGS=10V ID=15A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 VCC=100V ID=30A VGS=10V L=205H Tch=25C IF=30A VGS=0V Tch=25C IF=30A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C
Min.
200 3.0
Typ.
Max.
5.0 25 250 100 66
Units
V V A nA m S pF
10 50 12.5 25 1960 2940 260 390 18 27 20 30 17 26 53 80 19 29 51 76.5 15 22.5 16 24 45 1.10 1.65 0.19 1.4
ns
nC
A V s C
Thermalcharacteristics
Symbol Test Conditions Rth(ch-c) channel to case Thermal resistance Rth(ch-a) channel to ambient Rth(ch-a) ** channel to ambient ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Item
Min.
Typ.
Max.
0.463 87.0 52.0
Units
C/W C/W
www.fujielectric.co.jp/denshi/scd
1
2SK3597-01
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
300
5
Allowable Power Dissipation PD=f(Tc)
Surface mounted on 1000mm ,t=1.6mm FR-4 PCB
2
250
4
200
(Drain pad area : 500mm )
2
3
PD [W]
150
PD [W]
0 25 50 75 100 125 150
2
100
50
1
0
0 0 25 50 75 100 125 150
Tc [C]
Tc [C]
800
Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V
Typical Output Characteristics
ID=f(VDS):80s Pulse test,Tch=25C
120 20V 100 10V 8V
700 IAS=18A
600 IAS=27A 500 IAS=45A 400
80
7.5V
EAS [mJ]
ID [A]
60
7.0V
300
40
200
6.5V 6.0V
20
100
VGS=5.5V 0
0 25 50 75 100 125 150
0
0
2
4
6
8
10
12
starting Tch [C]
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C
100 100
Typical Transconductance
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C
10
ID[A]
10
1
gfs [S]
1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 1 10 100
VGS[V]
ID [A]
2
2SK3597-01
FUJI POWER MOSFET
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80s Pulse test, Tch=25C
0.20 200 180 VGS= 6.0V 5.5V 6.5V 7.0V 160
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V
0.15
7.5V 8V 0.10 10V 20V
RDS(on) [ m ]
140 120 100 80 60 max.
RDS(on) [ ]
0.05 40 20 0.00 0 20 40 60 80 100 120 0 -50 -25 0 25
typ.
50
75
100
125
150
ID [A]
Tch [C]
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A
7.0 6.5 6.0 5.5 5.0 max. 10 12 14
Typical Gate Charge Characteristics
VGS=f(Qg):ID=30A, Tch=25C
VGS(th) [V]
4.5
VGS [V]
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min.
8 6 4 2 0 0 10 20
Vcc= 100V
30
40
50
60
70
80
Tch [C]
Qg [nC]
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
10
1
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80s Pulse test,Tch=25C
100
Ciss
0
10
10 Coss
C [nF]
10
-1
IF [A]
1
2
Crss
10
-2
10
-1
10
0
10
1
10
0.1 0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
3
2SK3597-01
Typical Switching Characteristics vs. ID
10
3
FUJI POWER MOSFET
t=f(ID):Vcc=48V, VGS=10V, RG=10
100 90
Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB
Rth(ch-a) [C/W]
tf
2
80 70 60 50 40
10
td(off)
t [ns]
td(on)
1
10
tr
30 20 10
10
0
0
-1
10
10
0
10
1
10
2
0
1000
2000
3000
2
4000
5000
ID [A]
Drain Pad Area [mm ]
10
2
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V
Single Pulse
Avalanche Current I AV [A]
10
1
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
10
1
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4


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