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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3114
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3114 PACKAGE Isolated TO-220
DESCRIPTION
The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
* Low on-state resistance: RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.0 A) * Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.0 A) * Gate voltage rating: 30 V * Avalanche capability ratings * Isolated TO-220 package
5
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
600 30 4.0 16 30 2.0 150 -55 to +150 4.0 10.7
V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current
Note2
IAS EAS
Single Avalanche Energy Note2
Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13337EJ2V0DS00 (2nd edition) Date Published January 2001 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1998
2SK3114
ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr Test Conditions VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.0 A VGS = 10 V, ID = 2.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 2.0 A VGS(on) = 10 V RG = 10 RL = 10 VDD = 450 V VGS = 10 V ID = 4.0 A IF = 4.0 A, VGS = 0 V IF = 4.0 A, VGS = 0 V di/dt = 50 A/s 2.5 1.0 50 1.6 550 115 13 12 6 35 12 15 4 4.4 0.9 1.3 4.3 2.2 MIN. TYP. MAX. 100 10 3.5 Unit
A A
V S pF pF pF ns ns ns ns nC nC nC V
s C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD ID
90% 90%
VGS VGS
Wave Form
0
10%
VGS(on)
90%
IAS ID VDD
ID ID
Wave Form
0 10%
10%
= 1 s Duty Cycle 1%
td(on) ton
tr td(off)
toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D13337EJ2V0DS
2SK3114
TYPICAL CHARACTERISTICS (TA = 25C )
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 40
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
80
PT - Total Power Dissipation - W
20 40 60 80 100 120 140 160
30
60
20
40
20
10
0 0
0
20
40
60
80
100
120 140
160
Tch - Channel Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
ID - Drain Current - A
10
1
d ite im ) L ID(DC) n (o RD Po we r
ID(pulse) PW
=1 0m s 10 0m s
0.1 1
TC = 25C Single Pulse 10
Di 1m ss 10 0 m s ipa 0m s tio s n Lim ite d
3
1m s
100
1 000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - C/W
100
Rth(CH-A) = 62.5 C/W
10
Rth(CH-C) = 4.17 C/W
1
0.1 Single Pulse 100m 1m 10m 100m 1 10 100 1 000 PW - Pulse Width - s
0.01 10m
Data Sheet D13337EJ2V0DS
3
2SK3114
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 8V 10 VGS = 10 V 6V Pulsed
FORWARD TRANSFER CHARACTERISTICS VDS = 10V Pulsed
Tch = 125 C 75 C
100
ID - Drain Current - A
ID - Drain Current - A
10
5
1.0
25 C -25 C
0.1
0
10
20
30
40
0
5
10
15
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
VGS(off) - Gate to Source Cutoff Voltage - V
VDS = 10 V ID = 1 mA
| yfs | - Forward Transfer Admittance - S
5.0
10
Tch = -25 C 25 C 75 C 125 C
4.0
3.0
1.0
2.0
1.0
0 -50
0
50
100
150
VDS = 10 V Pulsed 0.1 0.1
1.0 ID - Drain Current - A
10
Tch - Channel Temperature - C
RDS (on) - Drain to Source On-State Resistance - 9
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
3.0
RDS(on) - Drain to Source On-State Resistance - 9
Pulsed ID = 4.0 A
3.0 VGS = 10 V
Pulsed
VGS = 20 V 2.0
2.0
2.0 A
1.0
1.0
0 0
5
10
15
0
1.0
10 ID - Drain Current - A
100
VGS - Gate to Source Voltage - V
4
Data Sheet D13337EJ2V0DS
2SK3114
RDS (on) - Drain to Source On-State Resistance - 9
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4.0 ID = 4.0 A 2.0 A 3.0
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
ISD - Diode Forward Current - A
100
10
2.0
1.0
1.0 VGS = 10 V 0 -50 Pulsed 0 50 100 150
0.1 VGS = 10 V 0 0.5
0V Pulsed 1.5
1.0
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000
Ciss, Coss, Crss - Capacitance - pF
td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS 100 td(off) tf 10 td(on)
VGS = 0 V f = 1 MHZ
1 000 Ciss 100 Coss 10 Crss 1 0.1
tr 1 VDD = 150 V VGS = 10 V RG = 10 9 1 ID - Drain Current - A 10
1
10
100
0.1 0.1
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DRAIN CURRENT 10 000
trr - Reverse Recovery Time - ns
VDS - Drain to Source Voltage - V
600
1 000
VDD = 450 V 300 V 150 V
12 10 VGS 8 6
400
100
200 VDS 0 4 8 12
4 2 0 16
10 0.01
0.1
1
10
ID - Drain Current - A
Qg - Gate Charge - nC
Data Sheet D13337EJ2V0DS
VGS - Gate to Source Voltage - V
di/dt = 50 A/mS VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 ID = 4 A 14
5
2SK3114
100
IAS - Single Avalanche Current - A
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY DERATING FACTOR 120 VDD = 150 V RG = 25 W VGS = 20 (R) 0 V IAS 4 A
Energy Derating Factor - %
100 80 60 40 20 0 25
10 IAS = 4 A
EAS =1 0.7
mJ
1.0
0.1 10m
RG = 25 W VDD = 150 V VGS = 20 (R) 0 V Starting Tch = 25C 100m 1m 10m L - Inductive Load - H
50
75
100
125
150
Starting Tch - Starting Channel Temperature - C
PACKAGE DRAWINGS (Unit: mm)
Isolated TO-220 (MP-45F)
10.00.3
EQUIVALENT CIRCUIT
Drain
3.20.2
4.50.2 2.70.2
Gate
Body Diode
15.00.3
30.1
40.2
0.70.1 2.54 TYP.
1.30.2 1.50.2 2.54 TYP.
13.5 MIN.
12.00.2
Gate Protection Diode
Source
2.50.1 0.650.1 1.Gate 2.Drain 3.Source
123
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
6
Data Sheet D13337EJ2V0DS
2SK3114
[MEMO]
Data Sheet D13337EJ2V0DS
7
2SK3114
* The information in this document is current as of January, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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