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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ625 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ625 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.4 +0.1 -0.05 0.65-0.15 +0.1 0.16+0.1 -0.06 2.8 0.2 3 1.5 0 to 0.1 1 2 FEATURES * 1.8 V drive available * Low on-state resistance RDS(on)1 = 113 m MAX. (VGS = -4.5 V, ID = -1.5 A) RDS(on)2 = 171 m MAX. (VGS = -2.5 V, ID = -1.5 A) RDS(on)3 = 314 m MAX. (VGS = -1.8 V, ID = -1.0 A) 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 0.2 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION PART NUMBER 2SJ625 PACKAGE SC-96 (Mini Mold Thin Type) Marking: XM ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25C) Drain Current (pulse) Note1 EQUIVALENT CIRCUIT -20 m8.0 m3.0 m12 0.2 1.25 150 -55 to +150 V V A A W W C C Gate Protection Diode Source Gate Drain VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Body Diode Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board, t 5 sec. Note2 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15961EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan (c) 2002 2SJ625 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = -16 V VGS = -4.0 V ID = -3.0 A IF = 3.0 A, VGS = 0 V TEST CONDITIONS VDS = -20 V, VGS = 0 V VGS = m8.0 V, VDS = 0 V VDS = -10 V, ID = -1.0 mA VDS = -10 V, ID = -1.5 A VGS = -4.5 V, ID = -1.5 A VGS = -2.5 V, ID = -1.5 A VGS = -1.8 V, ID = -1.0 A VDS = -10 V VGS = 0 V f = 1.0 MHz VDD = -10 V, ID = -1.5 A VGS = -4.0 V RG = 10 -0.45 2.0 -0.75 4.9 90 128 188 348 88 38 39 190 220 250 2.6 0.8 0.9 0.89 113 171 314 MIN. TYP. MAX. -10 UNIT A A V S m m m pF pF pF ns ns ns ns nC nC nC V m10 -1.5 TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS(-) 0 10% VGS 90% IG = -2 mA 50 RL VDD VDD PG. 90% VDS(-) 90% 10% 10% VGS(-) 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet D15961EJ1V0DS 2SJ625 TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.5 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 1.25 1 0.75 0.5 0.25 0 0 Mounted on FR-4 board, t 5 sec 25 50 75 100 125 150 175 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - C -100 RDS(on) Limited (VGS = -4.5 V) ID - Drain Current - A ID(pulse) PW = 1 ms -10 -1 ID(DC) 10 ms -0.1 100 ms Single Pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm -1 -10 5s -0.01 -0.1 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - C/W Single Pulse W ithout board 100 Mounted on FR-4 board of 5000 mm 2 x 1.1 mm 10 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15961EJ1V0DS 3 2SJ625 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -12 Pulsed -10 ID - Drain Current - A ID - Drain Current - A -10 VDS = -10 V Pulsed -1 TA = 125C 75C 25C -25C -8 -6 -4 VGS = -4.5 V -2.5 V -0.1 -0.01 -1.8 V -2 0 0 -0.4 -0.8 -1.2 -1.6 -2 VDS - Drain to Source Voltage - V -0.001 -0.0001 0 -1 -2 -3 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S -1 VGS(off) - Gate Cut-off Voltage - V 100 VDS = -10 V Pulsed 10 TA = -25C 25C 75C 125C VDS = -10 V ID = -1.0 mA -0.8 -0.6 1 -0.4 -50 0 50 100 150 Tch - Channel Temperature - C 0.1 -0.01 -0.1 -1 -10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m 300 Pulsed 250 VGS = -2.5 V, ID = -1.5 A 200 VGS = -1.8 V, ID = -1.0 A 300 Pulsed 250 200 150 150 ID = -1.5 A 100 100 VGS = -4.5 V, ID = -1.5 A 50 -50 0 50 100 150 Tch - Channel Temperature - C 50 0 -2 -4 -6 -8 VGS - Gate to Source Voltage - V 4 Data Sheet D15961EJ1V0DS 2SJ625 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m 300 VGS = -4.5 V Pulsed 250 RDS(on) - Drain to Source On-state Resistance - m 300 VGS = -2.5 V Pulsed 250 200 TA = 125C 150 75C 100 25C -25C 50 -0.01 200 TA = 125C 150 75C 25C 100 -25C -0.1 -1 -10 -100 50 -0.01 -0.1 -1 -10 ID - Drain Current - A ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT SWITCHING CHARACTERISTICS 300 td(on), tr, td(off), tf - Switching Time - ns 1000 VGS = -1.8 V Pulsed TA = 125C 75C 25C tr tf td(off) 100 250 200 -25C 150 td(on) VDD = -10 V VGS = -4.0 V RG = 10 -1 ID - Drain Current - A 100 50 -0.01 -0.1 -1 -10 10 -0.1 -10 ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Ciss, Coss, Crss - Capacitance - pF IF - Diode Forward Current - A 100 VGS = 0 V f = 1.0 MHz Ciss Pulsed 10 100 Coss Crss 1 VGS = 0 V 0.1 10 -0.1 0.01 -1 -10 -100 0.4 0.6 0.8 1 1.2 1.4 VDS - Drain to Source Voltage - V Data Sheet D15961EJ1V0DS VF(S-D) - Source to Drain Voltage - V 5 2SJ625 DYNAMIC INPUT/OUTPUT CHARACTERISTICS -6 VGS - Gate to Source Voltage - V ID = -3.0 A VDD = -16 V -10 V -4.0 V -4 -2 0 0 1 2 3 QG - Gate Charge - nC 6 Data Sheet D15961EJ1V0DS 2SJ625 [MEMO] Data Sheet D15961EJ1V0DS 7 2SJ625 * The information in this document is current as of June, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 |
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