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| 2SH31 Silicon N Channel IGBT High Speed Power Switching ADE-208-793(Z) 1st. Edition May 1999 Features * High speed switching * Low on-voltage Outline TO-3P C G E 1 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH31 Absolute Maximum Ratings (Ta = 25C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25C Symbol VCES VGES IC ic(peak) PC Tj Tstg Note1 Ratings 600 20 75 150 150 150 -55 to +150 Unit V V A A W C C Electrical Characteristics (Ta = 25C) Item Zero gate voltage collector current Gate to emitter leak current I GES 6.0 2.1 4100 400 600 300 800 1 8.0 2.6 600 1600 A V V pF ns ns ns ns VGE = 20 V, VCE = 0 I C = 75mA, VCE = 10V I C = 75A, VGE = 15V VCE = 10V, VGE = 0 f = 1MHz I C = 75A RL = 4 VGS = 15V Rg = 50 Symbol I CES Min Typ Max 100 Unit A Test Conditions VCE = 600V, VGE = 0 Gate to emitter cutoff voltage VGE(off) Collector to emitter saturation VCE(sat) voltage Input capacitance Switching time Cies tr t on tf t off 2 2SH31 Main Characteristics Power vs. Temperature Derating 200 Pch (W) (A) Maximum Safe Operation Area 1000 300 100 30 10 3 1 0.3 0.1 0.03 PW DC 150 I Collector Current 1 10 m 0 s Channel Dissipation s 100 = ion at er Op 10 s m 50 s (1 ho t) ) C 25 0 50 100 Case Temperature 150 200 Tc (C) Ta = 25 C 0.01 0.1 0.3 1 3 10 30 100 300 1000 Collector to Emitter Voltage VCE (V) c (T = Reverse Bias SOA 200 I C (A) Typical Output Characteristics 100 15 V (A) 11 V Pulse Test 100 50 80 10 V I Collector Current 20 10 5 2 1 0 200 400 600 800 Collector to Emitter Voltage VCE (V) Tc = 25 C Collector Current 60 40 9V 20 VGE = 8 V 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) 3 2SH31 Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage 5 Pulse Test 4 Typical Transfer Characteristics V CE = 10 V Pulse Test 80 Collector to Emitter Saturation Voltage V CE(sat) (V) 100 I C (A) Collector Current 60 -25C Tc = 75C 20 25C 3 I C = 75 A 2 50 A 1 25 A 40 0 4 8 12 16 V GE (V) 20 0 Gate to Emitter Voltage 12 4 8 Gate to Emitter Voltage 16 20 V GE (V) Collector to Emitter Saturation Voltage V CE(sat) (V) Collecot to Emitter Saturation Voltage vs. Collector Current 10 Capacitance C (pF) Typical Capacitance vs. Collecotor to Emitter Voltage 100000 30000 10000 Cies 3000 1000 300 Coes Cres 0 10 20 30 40 50 Collector to Emitter Voltage V CE (V) VGE = 0 f = 1 MHz 5 -25C 25C 2 1 Tc = 75C 0.5 0.2 V GE = 15 V Pulse Test 1 2 5 10 20 50 Collector Current I C (A) 100 100 50 4 2SH31 Dynamic Input Characteristics Switching Characteristics 20 1000 V CE (V) 1000 V CC = 200 V 300 V 400 V V GE (V) t d(off) 500 VGE Collector to Emitter Voltage Switching Time t (ns) 800 16 600 12 Gate to Emitter Voltage 200 100 50 20 10 1 tf t d(on) tr 400 VCE V CC = 400 V 300 V 200 V I C = 75 A 8 200 4 0 400 V CC = 300V, V GE = 15 V Rg = 50 , Ta = 25C 10 20 50 2 5 Collector Current I C (A) 100 0 80 160 240 320 Gate Charge Qg (nc) Switching Characteristics 10000 I C = 75 A, R L = 4 V GE = 15 V t d(off) 1000 300 100 30 10 1 tr t d(on) tf 1000 500 Switching Characteristics t d(off) tf tr 200 100 50 20 10 25 I C = 75 A, R L = 4 V GE = 15 V, Rg = 50 50 75 100 Case Temperature Tc (C) 125 t d(on) Switching Time t (ns) 3 10 30 100 300 Gate Resistance Rg ( ) 1000 Switching Time t (ns) 3000 5 2SH31 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 0.83 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu ho 1s D= PW T 0.01 10 100 1m 10 m 100 m Pulse Width PW (S) 1 10 Switching Time Test Circuit Waveform 90% 0 Vin 10% Ic Monitor V CE Vin Monitor VCE Monitor Rg Vin 15 V Ic td(off) toff 10% tf D.U.T. V CC RL td(on) ton 90% 10% tr 90% 6 2SH31 Package Dimensions Unit: mm 5.0 0.3 3.2 0.2 0.5 typ 16.0 max 1.0 typ 5.0 max 1.5 typ 14.9 0.2 2.0 typ 20.1 max 1.6 typ 1.4 max 2.0 typ 18.0 0.5 2.8 typ 1.0 0.2 3.6 typ 0.9 typ 1.0 typ 0.6 0.2 0.3 typ 5.45 0.2 5.45 0.2 Hitachi Code EIAJ JEDEC TO-3P SC-65 -- 7 2SH31 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 8 |
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