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Datasheet File OCR Text: |
Equivalent circuit C Darlington sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2557 200 200 6 5 2 70(Tc=25C) 150 -55 to +150 Unit V V V A A W C C 2SD2557 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=10mA VCE=5V, IC=1A IC=1A, IB=5mA VCE=10V, IE=-0.5A VCB=10V, f=1MHz 2SD2557 100max 5max 200min 1500 to 6500 1.5max 15typ 110typ V pF 20.0min 4.0max B (3.2k)(450) E Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator and General Purpose (Ta=25C) Unit External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 A mA V 19.90.3 4.0 a b o3.20.1 MHz 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 5.450.1 B C E 5.450.1 Weight : Approx 6.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 5 IB = 1 .0 2 m 50 A VCE( sat ) - IB Characteristics (Typical) I C - V BE Temperature Characteristics (Typical) 5 (VCE=4V) A 50 mA 10 mA 4 Collector Current I C (A) 3 1 .2 m A Collector Current I C (A) 2.5 mA 4 3 em p) mp) (Cas 25C (C A 0 .3 m 1 1 0 0 2 4 6 0 0 1 -30C (C 12 5C ase Tem 2 2 as eT e Te p) 0 .6 m A 2 2.5 Collector-Emitter Voltage V C E( V) Base-Emittor Voltage V B E( V) h FE - IC Characteristics (Typical) h FE - I C Temperature Characteristics (Typical) (VCE=5V) 8000 5000 D C Cur r ent Gai n h F E C 125 C 25 -30 C j- a( C/W) j-a - t Characteristics 5.0 1000 500 Transient Thermal Resistance 100 50 1.0 0.5 0.3 10 5 0.02 0.1 0.5 1 5 1 5 10 50 100 Time t(ms) 500 1000 2000 Collector Current I C( A) fT - IE Characteristics (Typical) 30 Safe Operating Area (Single Pulse) 70 P c - T a Derating 10 Collect or Cur ren t I C( A) 5 10 10 m 50 s m s 0m s Ma xim um Powe r Dissipat io n P C( W) 1m s 60 W 50 ith In fin ite 40 he at 1 0.5 Without Heatsink Natural Cooling 0.1 0.05 5 10 50 100 300 si nk 30 20 10 Without Heatsink 3.5 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 156 |
Price & Availability of 2SD2557
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