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| Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm 15.00.3 11.00.2 5.00.2 3.2 s Features q q q q 16.20.5 12.5 3.5 Solder Dip Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < -2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings -130 -110 -5 -10 -6 50 3 150 -55 to +150 Unit V V V A A W C C 0.7 21.00.5 15.00.2 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a) Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = -130V, IE = 0 VCE = -110V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -5V, IC = -1A VCE = -5V, IC = -5A IC = -5A, IB = -5mA IC = -5A, IB = -5mA VCE = -10V, IC = - 0.5A, f = 1MHz IC = -5A, IB1 = -5mA, IB2 = 5mA, VCC = -50V 20 0.9 2.5 1.7 -110 2000 5000 30000 -2.5 -3.0 V V MHz s s s min typ max -100 -100 -100 Unit A A A V FE2 Rank classification Q P 5000 to 15000 8000 to 30000 Rank hFE2 1 Power Transistors PC -- Ta 80 -12 TC=25C (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) IB=-5mA 2SB1253 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 VCE(sat) -- IC IC/IB=1000 Collector power dissipation PC (W) 70 60 50 40 -10 -30 Collector current IC (A) -8 -6 (1) 30 20 (2) 10 (3) 0 0 20 40 60 80 100 120 140 160 -1mA - 0.9mA - 0.8mA - 0.7mA - 0.6mA - 0.5mA - 0.4mA - 0.3mA -10 TC=100C -3 25C -25C -4 -1 -2 - 0.2mA - 0.1mA - 0.3 0 0 -2 -4 -6 -8 -10 -12 - 0.1 - 0.1 - 0.3 -1 -3 -10 -30 -100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -100 hFE -- IC 100000 VCE=-5V 1000 Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 Forward current transfer ratio hFE 30000 -30 TC=100C 25C 300 10000 -25C -10 100 3000 1000 300 100 30 10 - 0.01 - 0.03 - 0.1 - 0.3 -3 TC=-25C 30 -1 100C 25C 10 - 0.3 3 - 0.1 - 0.1 - 0.3 -1 -3 -10 -30 -100 -1 -3 -10 1 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) ton, tstg, tf -- IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (-IB1=IB2) VCC=-50V TC=25C tstg tf ton 0.3 0.1 0.03 0.01 0 -4 -8 -12 -16 Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C ICP t=1ms -3 -1 IC DC 10ms Switching time ton,tstg,tf (s) 10 3 1 Collector current IC (A) -10 - 0.3 - 0.1 - 0.03 - 0.01 -1 -3 -10 -30 -100 -300 -1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SB1253 Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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