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| Power Transistors 2SD1260, 2SD1260A Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB937 and 2SB937A 10.00.3 Unit: mm 8.50.2 6.00.5 3.40.3 1.00.1 q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C) Ratings 60 80 60 80 5 4 2 35 1.3 150 -55 to +150 Unit V 1.50.1 s Features 1.5max. 10.5min. 2.0 1.1max. 0.80.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1260 2SD1260A 2SD1260 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.540.3 5.080.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.40.3 1.00.1 8.50.2 emitter voltage 2SD1260A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W 10.00.3 6.00.3 1.5-0.4 2.0 3.0-0.2 4.40.5 0.80.1 2.540.3 R0.5 R0.5 1.1 max. 0 to 0.4 5.080.5 C 1 2 3 C s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1260 2SD1260A 2SD1260 2SD1260A 2SD1260 2SD1260A 1:Base 2:Collector 3:Emitter N Type Package (DS) (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf * Conditions VCE = 60V, IE = 0 VCE = 80V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 8mA, IB2 = -8mA, VCC = 50V min typ max 1 1 2 2 2 4.40.5 60 80 1000 1000 10000 2.8 2.5 20 0.5 4 1 14.70.5 +0.4 +0 Unit mA mA mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 V V MHz s s s Rank classification R Q P 1000 to 2500 2000 to 5000 4000 to 10000 Internal Connection B C Rank hFE2 E 1 Power Transistors PC -- Ta 40 2SD1260, 2SD1260A IC -- VCE 5 TC=25C 10 VCE=4V IC -- VBE Collector power dissipation PC (W) 35 30 25 20 15 10 5 0 0 20 Collector current IC (A) 3 2 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA Collector current IC (A) (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (1) (PC=1.3W) 4 8 25C TC=100C 6 -25C 4 1 (2) (3) 0 40 60 80 100 120 140 160 0 1 2 3 4 2 0 5 6 0 0.8 1.6 2.4 3.2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=250 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C 25C 105 hFE -- IC 10000 Cob -- VCB Collector output capacitance Cob (pF) VCE=4V IE=0 f=1MHz TC=25C Forward current transfer ratio hFE 3000 1000 300 100 30 10 3 1 0.1 104 TC=100C 103 25C -25C 102 0.1 0.3 1 3 10 10 0.01 0.03 0.1 0.3 1 3 10 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25C Rth(t) -- t (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10 Thermal resistance Rth(t) (C/W) Collector current IC (A) 102 10 ICP 3 IC 1 0.3 0.1 0.03 0.01 1 3 10 30 300ms 1ms t=10ms 1 2SD1260A 2SD1260 10-1 100 300 1000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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