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 Power Transistors
2SD1249, 2SD1249A
Silicon NPN triple diffusion planar type
Unit: mm
For low-freauency power amplification
10.00.3 1.50.1
8.50.2 6.00.5
3.40.3 1.00.1
s Features
q q
10.5min.
High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
1.5max.
2.0
1.1max.
0.80.1
0.5max.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1249 2SD1249A 2SD1249 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.540.3 5.080.5
Ratings 350 400 250 300 5 1.5 0.75 35 1.3 150 -55 to +150
Unit V
1
2
3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.40.3 1.00.1
8.50.2
emitter voltage 2SD1249A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
V
10.00.3
6.00.3
V A A W
1.5-0.4
2.0
3.0-0.2
4.40.5
0.80.1 2.540.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.080.5
C C
1 2 3
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1249 2SD1249A 2SD1249 2SD1249A 2SD1249 2SD1249A
1:Base 2:Collector 3:Emitter N Type Package (DS)
(TC=25C)
Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 350V, VBE = 0 VCE = 400V, VBE = 0 VCE = 150V, IB = 0 VCE = 200V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A VCE = 10V, IC = 1A IC = 1A, IB = 0.2A VCE = 10V, IC = 0.2A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = - 0.1A, VCC = 50V 30 0.5 2 0.5 250 300 40 10 1.5 1 V V MHz s s s 250 min typ max 1 1 1 1 1 Unit mA
4.40.5
14.70.5
+0.4
+0
mA mA V
Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE1
Rank classification
R 40 to 90 Q 70 to 150 P 120 to 250
Rank hFE1
1
Power Transistors
PC -- Ta
50 1.2 (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) TC=25C 1.0
2SD1249, 2SD1249A
IC -- VCE
4.0 VCE=10V
IC -- VBE
Collector power dissipation PC (W)
Collector current IC (A)
(1) 30
0.8
IB=14mA 12mA 10mA 8mA 6mA
Collector current IC (A)
40
3.2
25C TC=100C -25C
2.4
0.6
20
1.6
0.4
4mA
10 (2) (3) 0 0 20 40 60 80 100 120 140 160
0.2
2mA
0.8
0 0 2 4 6 8 10 12
0 0 0.4 0.8 1.2 1.6 2.0 2.4
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10000 10 IC/IB=10
hFE -- IC
1000 VCE=10V 300 100 30 10 3 1 0.3 0.1 0.001 0.003
fT -- IC
VCE=10V f=10MHz TC=25C
Forward current transfer ratio hFE
TC=100C 3
1000 300 100 30 10 3 1 0.01 0.03
1
TC=100C 25C -25C
0.3
25C -25C
0.1
0.03
0.01 0.01
0.03
0.1
0.3
1
3
0.1
0.3
1
3
10
Transition frequency fT (MHz)
3000
0.01 0.03
0.1
0.3
1
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Area of safe operation (ASO)
100 30 103 Non repetitive pulse TC=25C
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102
10 3 1 IC 0.3 0.1 0.03 0.01 1 3 10 30 300ms 1ms
ICP
t=10ms
1
2SD1249A
2SD1249
10-1
100
300
1000
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2


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