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| UTC 2SC4027 NPN EPITAXIAL SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES *High voltage and large current capacity. *Fast switching time. APPLICATION *Converters, inverters, color TV audio output. *Complementary to 2SA1522. 1 TO-252 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Tc=25C Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Icp Pc Tj Tstg RATINGS 180 160 6 1.5 2.5 1 15 150 -55 ~+150 UNIT V V V A A W C C ELECTRICAL CHARACTERISTICS (Ta=25,unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Gain-Bandwidth Product Output Capacitance Turn-On Time Storage Time Fall Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob ton tstg tf TEST CONDITION Ic=10A,IE=0 Ic=1mA,RBE= IE=10A,Ic=0 VCB=120V,IE=0 VEB=4V,Ic=0 VCE=5V,Ic=100mA VCE=5V,Ic=10mA Ic=500mA,IB=50mA Ic=500mA,IB=50mA VCE=10V,Ic=50mA VCB=-10V,f=1MHz See specified Test Circuit MIN 180 160 6 TYP MAX UNIT V V V A A V V MHz pF s s s 100 80 0.13 0.85 120 12 60 1.2 80 1.0 1.0 400 0.45 1.2 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R209-018,A UTC 2SC4027 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE1 RANK hFE R 100~200 S 140~280 T 200~400 SWITCHING TIME TEST CIRCUIT INPUT PW=20s D.C.1% VR 50 + 100F + 470F IB1 RB IB2 OUTPUT RL 14k -5V 10IB1= -10IB2=Ic=0.7A IC-VCE 1.8 1.6 Collector Current, Ic (A) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 IB=0 0 1 2 3 4 5 Collector to Emitter Voltage, VCE (V) 1.6 IC-VBE VCE=5V 1000 7 5 DC Current Gain, hFE 3 2 100 7 5 3 2 1.0 1.2 10 0 0 20mA 10mA 5mA 30mA 40mA 50mA 100V IC-VCE 1.0 A 4.0m 3.5mA 3.0mA 5. 0m A 4.5mA 0.8 Collector Current, Ic (A) 0.6 2.5mA 2.0mA 0.4 0.2 1.5mA 1.0mA 0.5mA IB=0 10 20 30 40 50 Collector to Emitter Voltage, VCE (V) hFE-Ic VCE=5V 2mA 1mA Collector Current, Ic (A) 1.2 Ta=75 Ta= 75 0.8 25 -25 0.4 0 -25 25 0 0.2 0.4 0.6 0.8 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector to Emitter Voltage, VBE (V) Collector Current, Ic (A) UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R209-018,A UTC 2SC4027 NPN EPITAXIAL SILICON TRANSISTOR f T-Ic 5 Gain Bandwidth Product, fT (MHz) 3 2 100 7 5 3 2 10 0.01 Output Capacitance, Cob (pF) VCE=10V 100 7 5 3 2 Cob-VCB f=1MHz 10 7 5 3 1.0 23 23 5 7 10 5 Collector to Base Voltage, VCB (V) VBE(sat)-Ic 7 100 2 3 23 5 7 0.1 5 7 1.0 Collector Current, Ic (A) VCE(sat)-Ic 2 Collector to Emitter Saturation Voltage, VCE(sat) (V) 3 2 1000 7 5 3 2 100 7 5 3 2 Ta=75 -25 7 0.01 2 3 25 5 7 0.1 23 Ic/IB=10 Collector to Emitter Saturation Voltage, VCE(sat) (V) 10 7 5 3 2 Ic/IB=10 1.0 7 5 3 Ta=-25 75 7 0.01 23 25 5 7 1.0 2 3 5 7 0.1 23 5 7 1.0 2 3 Collector Current, Ic (A) Collector Current, Ic (A) ASO 5 3 2 Collector Current, Ic (A) 1.0 5 3 2 0.1 5 3 2 0.01 3 One pulse Tc=25 5 7 1.0 23 5 7 10 23 5 7 100 2 Collector to Emitter Voltage, VCE (V) DC ICP=2.5A IC=1.5A 1m s Collector Dissipation, Pc (W) 16 15 14 12 10 8 6 4 2 1 0 No heat sink 0 20 40 60 Pc-Ta ms 10 op er ati on ( D C n io at er op Ta =2 5 ) s 0m 10 25 a= (T ) 80 100 120 140 160 Ambient Temperature, Ta () UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R209-018,A UTC 2SC4027 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R209-018,A |
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