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| 2N5013 thru 2N5015 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER'S DATA SHEET FEATURES: * * * * * * * BVCER and BVCEO to 1000 volts Low Saturation Voltage Low Leakage at High Temperature High Gain, Low Saturation 200 C Operating, Gold Eutectic Die Attach 2N5010 thru 2N5012 Also Available, Contact Factory TX, TXV, and S-Level Screening Available 0.5 AMP 800 - 1000 Volts NPN Transistor Maximum Ratings Symbol Value Units Collector - Emitter Voltage (RBE = 1K) Collector - Base Voltage Emitter - Base Voltage Peak Collector Current Peak Base Current Total Device Dissipation @ TC = 100 C Derate above 100 C Operating and Storage Temperature Thermal Resistance, Junction to Case CASE OUTLINE: TO-5 PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR 2N5013 2N5014 2N5015 2N5013 2N5014 2N5015 VCER VCBO VEBO IC IB PD Tj, Tstg RJC 800 900 1000 800 900 1000 5 0.5 50 2.0 20 -65 to +200 50 V V V A mA W mW/C C C/W NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0043A DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2N5013 thru 2N5015 Electrical Characteristic 1/ Collector - Emitter Breakdown Voltage (IC = 200ADC, RBE = 1K) Collector-Base Breakdown Voltage (IC = 200ADC) Emitter-Base Breakdown Voltage (IE = 50ADC) Collector Cutoff Current VCB = 650V (2N5013) VCB = 700V (2N5014) VCB = 750V (2N5015) VCB = 650V (2N5013) VCB = 700V (2N5014) VCB = 750V (2N5015) 2N5013 2N5014 2N5015 2N5013 2N5014 2N5015 Symbol BVCER Min 800 900 1000 800 900 1000 5 -- -- -- -- -- -- 10 30 -- -- -- 20 -- -- -- -- -- Max -- Units V BVCBO BVEBO -- -- 12 12 12 100 100 100 V V (TC = 100) ICBO Adc DC Current Gain 2/ (IC = 5mADC, VCE = 10VDC) (IC = 20mADC, VCE = 10VDC) Collector - Emitter Saturation Voltage 2/ (IC = 20mADC, IB = 5mADC) Base - Emitter Saturation Voltage 2/ (IC = 20mADC, IB = 5mADC) Current Gain Bandwidth Product (IC = 20mADC, VCE = 10VDC, f = 1 - 20MHz) Output Capacitance (VCB = 10VDC, IE = 0ADC, f = 1.0MHz) 2N5013 2N5014 2N5015 hFE VCE(Sat) VBE(Sat) fT Cob td VCC = 125VDC, IC = 100mADC, IB1 = 20mADC, IB2 = 20mADC tr ts tf 180 1.6 1.6 1.8 1.0 -- 30 200 1200 3.0 800 -- Vdc Vdc MHz pF nsec nsec sec nsec Delay Time Rise Time Storage Time Fall Time NOTES: 1/ Unless Otherwise Specified: All Tests @25C 2/ Pulse Test: Pulse Width = 300 S, Duty Cycle = 2% For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. |
Price & Availability of 2N5015
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