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| Datasheet File OCR Text: |
| PROCESS Small Signal Transistor CP767 PNP- Saturated Switch Transistor Chip PRELIMINARY PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 12,300 PRINCIPAL DEVICE TYPES 2N3467 2N3468 EPITAXIAL PLANAR 30 x 30 MILS 9.0 MILS 3.85 x 4.20 MILS 7.35 x 3.75 MILS Al - 30,000A Au - 15,000A BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (24-June 2003) |
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