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| LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3209DCSM DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FEATURES 2.29 0.20 (0.09 0.008) 1.65 0.13 (0.065 0.005) 0.64 0.08 (0.025 0.003) 1.40 0.15 (0.055 0.006) * SILICON PLANAR EPITAXIAL DUAL PNP TRANSISTOR 4.32 0.13 (0.170 0.005) 2.54 0.13 (0.10 0.005) 2 1 3 4 5 * HERMETIC CERAMIC SURFACE MOUNT PACKAGE * CECC SCREENING OPTIONS AVAILABLE * SPACE QUALITY LEVELS OPTIONS * HIGH SPEED SATURATED SWITCHING A 6 0.23 rad. (0.009) 1.27 0.13 (0.05 0.005) 6.22 0.13 (0.245 0.005) A= LCC2 PACKAGE Underside View APPLICATIONS: For high reliablitity general purpose applications requiring small size and low weight devices. PAD 1 - Collector 1 PAD 2 - Base 1 PAD 3 - Base 2 PAD 4 - Collector 2 PAD 5 - Emitter 2 PAD 6 - Emitter 1 ABSOLUTE MAXIMUM RATINGS(Tcase = 25C unless otherwise stated) PER SIDE VCBO VCEO VEBO IC PD PD Rja Tj Tstg Semelab plc. Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Device Dissipation Derate above 50C Thermal Resistance Junction to Ambient Max Junction Temperature Storage Temperature TOTAL -20V -20V -4V -200mA 300mW 500mW 2mW / C 3.3mW / C 420C / W 250C / W 200C -65 to 200C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 2/00 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO(sus)* V(BR)CBO* V(BR)EBO* ICES* Collector - Emitter Sustaining Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-off Current SEME 2N3209DCSM Test Conditions IC = 10mA IC = 10mA IE = 10mA VCE = 10V VCE = 10V TC = 125C IC = 10mA IB = 1mA IB = 3mA IB = 10mA IB = 1mA IB = 3mA IB = 10mA VCE = 0.3V VCE = 0.5V VCE = 1V VCE = 0.5V IC = 0 VBE = 0 VBE = 0 Min. -20 -20 -4 Typ. Max. Unit V V V 80 10 0.15 0.20 0.60 V nA mA VCE(sat)* Collector - Emitter Saturation Voltage IC = 30mA IC = 100mA IC = 10mA 0.78 0.85 25 30 15 12 0.98 1.2 1.7 120 V VBE(sat)* Base - Emitter Saturation Voltage IC = 30mA IC = 100mA IC = 10mA IC = 30mA IC = 100mA hFE* DC Current Gain -- Tamb = -55C IC = 30mA * Pulse test tp = 300ms , d 2% DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter fT CEBO CCBO Transition Frequency Capacitance Input Capacitance Test Conditions IC = 30mA VEB = 0.5V VCB = 5V VCE = 10V IC = 0 IE = 0 f = 100MHz f = 1.0MHz f = 1.0MHz Min. 400 Typ. Max. Unit MHz 6.0 5.0 pF pF ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter ton toff Turn-on Time Turn-off Time Test Conditions VCC = 2V IC = 30mA IB1 = 1.5mA VCC = 2V IC = 30mA Min. Typ. Max. Unit 60 90 ns ns IB1 = IB2 = 1.5mA Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 2/00 |
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