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27C512T
512K (64K x 8-Bit) OTP EPROM
A5-A9 1024 x 1022 Memory Matrix
x-Decoder
A12-A16
I/O0 Input Data Control
Y- Gating Y - Decoder
I/O15
CE OE PGM
A0-A4
A10-A11
VCC VPP VSS
H H
: High Threshhold Inverter
Memory
Logic Diagram
FEATURES:
* 64K x 8-bit OTP EPROM organization * RAD-PAK(R) radiation-hardened against natural space radiation * Total dose hardness: - > 100 Krad (Si), depending upon space mission * Excellent Single Event Effects: -SELTH > 80 MeV/mg/cm2 -SEUTH > 80 Mev/mg/cm2 * Package: -32 pin RAD-PAK(R) flat pack -32 pin RAD-PAK(R) DIP * Fast access time: - 120, 150, 200 ns (max) * Low power dissipation: - Active mode: 100 mW/MHz (typ) - Standby mode: 10 W (typ) * Programming power supply: - VPP = 12.5 V + 0.3 V * One-time programmable * Pin arrangement - JEDEC standard byte-wide EPROM - Flash memory and mask ROM compatible
DESCRIPTION:
Maxwell Technologies' 27C512T high density 512-Kilobit onetime programmable electrically programmable read only memory microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 27C512T features fast address times and low power dissipation. The 27C512T offers high speed programming using page programming mode. Maxwell Technologies' patented RAD-PAK(R) packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S.
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(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
(c)2003 Maxwell Technologies All rights reserved.
512K (64K x 8-Bit) OTP EPROM
TABLE 1. 27C512T PINOUT DESCRIPTION
PIN 1 2, 30 12-5, 27, 26, 23, 25, 4, 28, 29, 3 22 24 13-15, 17-21 16 31 32 SYMBOL VPP NC A0-A15 CE OE I/O0 - I/O7 GND PGM VCC DESCRIPTION Programming Voltage Not connected Address Enable Chip Enable Output Enable Data Input/Output Ground Program +5V Power Supply
27C512T
Memory
TABLE 2. 27C512T ABSOLUTE MAXIMUM RATINGS
PARAMETER Supply Voltage 1 Programming Voltage 1 All Input and Output Voltage A9 and OE Voltage Operating Temperature Range Storage Temperature Range 1. Relative to VSS. 2. VIN, VOUT, and VID min = -1.0V for pulse width < 20 ns.
1,2
SYMBOL VCC VPP VIN, VOUT VID TOPR TSTG
MIN -0.6 -0.6 -0.6 -0.6 -55 -65
MAX +7.0 +13.5 +7.0 13.0 +125 +125
UNIT V V V V
C C
TABLE 3. DELTA LIMITS
PARAMETER ISB ICC1 ICC2 ICC3 VARIATION 10% 10% 10% 10%
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(c)2003 Maxwell Technologies All rights reserved.
512K (64K x 8-Bit) OTP EPROM
TABLE 4. 27C512T RECOMMENDED OPERATING CONDITIONS
PARAMETER Supply Voltage Input Voltage Thermal Impedance -- DIP Package Thermal Impedance -- Flat Package Operating Temperature Range 1. VIL min = -1.0V for pulse width < 50 ns. 2. VIH max = VCC + 1.5V for pulse width < 20 ns. SYMBOL VCC VIL VIH MIN 4.5 -0.31 2.2 ---55
27C512T
MAX 5.5 0.8 VCC +12 1.26 1.27 +125 C/W C/W
C
UNITS V V
JC JC
TOPR
TABLE 5. 27C512T CAPACITANCE 1
PARAMETER Input Capacitance Output Capacitance 1. Guaranteed by design. SYMBOL CIN COUT MIN --MAX 10 15 UNIT pF pF
Memory
TABLE 6. 27C512T DC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(VCC = 5V + 10%, VPP = VSS TO VCC, TA = -55 TO +125 C, UNLESS OTHERWISE SPECIFIED) PARAMETER Input Leakage Current Output Leakage Current Standby VCC Current Operating VCC Current TEST CONDITION VIN = 5.5 V VOUT = 5.5 V/0.45 V CE = VIH IOUT = 0 mA, CE = VIL IOUT = 0 mA, f = 5 MHz IOUT = 0 mA, f = 10 MHz VPP Current Input Voltage Output Voltage IOH= -400 A IOL= 2.1 mA VPP = 5.5 V SYMBOL ILI ILO ISB ICC1 ICC2 ICC3 IPP1 VIH VIL VOH VOL SUBGRPOUPS 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 MIN -------2.2 -2.4 ---TYP ------1 -MAX 2 2 1 30 30 50 20 -0.8 -0.45 V A V UNIT A A mA mA
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(c)2003 Maxwell Technologies All rights reserved.
512K (64K x 8-Bit) OTP EPROM
27C512T
TABLE 7. 27C512T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1,2
(VCC = 5V + 10%, VPP = VSS TO VCC, TA = -55 TO +125 C, UNLESS OTHERWISE SPECIFIED) PARAMENTER Address Access Time -120 -150 -200 Chip Enable Access Time -120 -150 -200 Output Enable Access Time -120 -150 -200 Output Hold to Address Change -120 -150 -200 Output Disable to High-Z3 -120 -150 -200 TEST CONDITION CE = OE = VIL SYMBOL tACC SUBGRPOUPS 9, 10, 11 ---OE = VIL tCE 9, 10, 11 ---CE = VIL tOE 9, 10, 11 ---CE = VIL tOH 9, 10, 11 0 0 0 CE = OE = VIL tDF 9, 10, 11 0 0 0 50 50 50 ns ---ns 60 70 70 ns 120 150 200 ns 120 150 200 ns MIN MAX UNIT
Memory
1. tDF is defined as the time at which the output becomes an open circuit and data is no longer driven. 2. AC electrical parameters for programming operations are not tested. These are guaranteed by design. 3. Test conditions: - Input pulse levels 0.45V/2.4V - Input rise and fall times < 10 ns - Output load 1TTL Fate + 100 pF (including scope and jig) - Referenced levels for measuring timing 0.8V/2.0V
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(c)2003 Maxwell Technologies All rights reserved.
512K (64K x 8-Bit) OTP EPROM
27C512T
TABLE 8. 27C512T AC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATION 1,2
(VCC = 6.0V + 0.25V, VPP = 12.5V + 0.3V, TA = 25 C) PARAMETER Address Setup Time Address Hold Time Data Setup Time Data Hold Time VPP Setup Time VCC Setup Time Output Enable Setup Time Output Disable Time CE Initial Programming Pulse Width CE Overprogramming Pulse Width Output Enable Hold Time VPP Recovery Time Data Valid from Chip Enable SYMBOL tAS tAH tDS tDH tVPS tVCS tOES tDF3 tPW tOPW tOEH tVR tDV SUBGROUPS 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 9, 10, 11 MIN 2 0 2 2 2 2 2 0 0.19 0.19 2 2 1 TYP --------0.20 ----MAX -------130 0.21 5.25 ---UNIT s s s s s s s ns ms ms s s s
Memory
1. tDF is defined as the time at which the output becomes an open circuit and data is no longer driven. 2. AC electrical parameters for programming operations are not tested. These are guaranteed by design. 3. Test Conditions: - Input pulse levels 0.45V/2.4V - Input rise and fall times < 20 ns - Referenced levels for measuring timing 0.8V/2.0V
TABLE 9. 27C512T DC ELECTRICAL CHARACTERISTICS FOR PROGRAMMING OPERATIONS1,2,3,4
(VCC = 6.0V + 0.25V, VPP = 12.5V + 0.3V, TA = 25 C) PARAMETER Input Leakage Current Operating VCC Current Operating VPP Current Input Voltage5 Output Voltage IOH=-400 A IOH= 2.1mA 1. 2. 3. 4. 5. CE=PGM=VIL TEST CONDITION VIN=0V to VCC SYMBOL ILI ICC IPP VIH VIL VOH VOL SUBGROUPS 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 MIN ---2.2 -0.17 2.4 -MAX 2 30 40 VCC+0.56 0.8 -0.45 V UNIT A mA mA V
VCC must be applied before VPP and removed after VPP. VPP must not exceed 13V, including overshoot. Do not change VPP from VIL to 12.5V or 12.5V to VIL when CE = low. DC electrical parameters for programming operations are not tested. These are guaranteed by design. Device reliability may be adversely affected if the device is installed or removed while VPP = 12.5V.
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(c)2003 Maxwell Technologies All rights reserved.
512K (64K x 8-Bit) OTP EPROM
6. If VIH is over the specified maximum value, programming operation can not be guaranteed. 7. VIL min = -0.6V for pulse width < 20 ns.
27C512T
TABLE 10. 27C512T MODE SELECTION
MODE Read Output Disable Standby Program Program Verify Page Data Latch Page Program Program Inhibit VPP VCC VCC VCC VPP VPP VPP VPP VCC VPP VPP VPP Identifier 1. X = Don't care. 2. 11.5V < VH < 12.5V. VCC VCC VCC VCC VCC VCC VCC VCC VCC VCC VCC VCC VCC VCC CE VIL VIL VIH VIL VIL VIH VIH VIL VIL VIH VIH VIL OE VIL VIH X VIH VIL VIL VIH VIL VIH VIL VIH VIL PGM VIH VIH X VIL VIH VIH VIL VIL VIH VIL VIH VIH A9 X1 X X X X X X X X X X VH2 I/O DOUT High-Z High-Z DIN DOUT DIN High-Z High-Z High-Z High-Z High-Z ID
Memory
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(c)2003 Maxwell Technologies All rights reserved.
512K (64K x 8-Bit) OTP EPROM
FIGURE 1. READ TIMING WAVEFORM
27C512T
Memory
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(c)2003 Maxwell Technologies All rights reserved.
512K (64K x 8-Bit) OTP EPROM
FIGURE 2. PAGE PROGRAMMING FLOWCHART
START
27C512T
SET PAGE PROG. MODE VPP=12.5+0.3V, VCC=6.0+ 0.25V Address=0
A
n=0 n+1 Latch NO Address+1 Address Address+1 Address SET PAGE PROG./ VERIFY MODE VPP=12.5+0.3V, VCC=6.0+0.25V n=25 YES n
Latch
Memory
Program t PW=0.2ms+5% Address+1 Address VERIFY NOGO
B
Latch
B
GO Program t OPW=0.2ms
Address+1 Address NO Latch
Last Address? YES
A
SET PAGE MODE VCC=5.0+0.25V, V PP=VCC
READ All Address GO END
NOGO
FAIL
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(c)2003 Maxwell Technologies All rights reserved.
512K (64K x 8-Bit) OTP EPROM
FIGURE 3. PAGE PROGRAMMING TIMING WAVEFORM
27C512T
Memory
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(c)2003 Maxwell Technologies All rights reserved.
512K (64K x 8-Bit) OTP EPROM
FIGURE 4. BYTE PROGRAMMING FLOWCHART
START
27C512T
SET PROG./VERIFY MODE VPP=12.5+0.3V, V CC=6.0+0.25V
Address=0
n=0
n+1
n
Program t PW=1ms+5%
Memory
Address+1
Address
VERIFY GO
NOGO
Program t OPW=0.2ms
n=25 YES
NO
NO
Last Address? YES SET PAGE MODE VCC=5.0+0.25V, V PP=VCC
READ All Address GO END
NOGO
FAIL
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(c)2003 Maxwell Technologies All rights reserved.
512K (64K x 8-Bit) OTP EPROM
FIGURE 5. BYTE PROGRAMMING TIMING WAVEFORM
27C512T
Memory
DEVICE IDENTIFIER MODE DESCRIPTION
The Device Identifier Mode allows binary codes to be read from the outputs that identify the manufacturer and the type of device. Using this mode with programming equipment, the device will automatically match its own erase and programming algorithm.
27C512T SERIES IDENTIFIER CODE
IDENTIFIER MANUFACTURER CODE DEVICE CODE 1. 2. 3. 4. A0 VIL VIH I/O7 0 0 I/O6 0 0 I/O5 0 1 I/O4 0 1 I/O3 0 1 I/O2 1 0 I/O1 1 0 I/O0 1 0 HEX DATA 07 38
VCC = 5.0V + 10%. A9 = 12.0V + 0.5V. A1-A8, A10-A16, CE, OE = VIL, PGM = VIH. X = Don't care.
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(c)2003 Maxwell Technologies All rights reserved.
512K (64K x 8-Bit) OTP EPROM
27C512T
Memory
32 PIN RAD-PAK(R) DUAL IN LINE PACKAGE1
SYMBOL MIN A b b2 c D E eA eA/2 e L Q S1 S2 0.125 0.015 0.005 0.005 -0.014 0.045 0.008 -0.510 DIMENSION NOM 0.215 0.018 0.050 0.010 1.600 0.590 0.600 BSC 0.300 BSC 0.100 BSC 0.145 0.035 0.025 -0.155 0.070 --MAX 0.240 0.026 0.065 0.018 1.680 0.620
N 32 1. Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration: For this package type Constant Acceleration is 3000g's.
Note: All dimensions in inches
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(c)2003 Maxwell Technologies All rights reserved.
512K (64K x 8-Bit) OTP EPROM
27C512T
Memory
32 PIN RAD-PAK(R) FLAT PACKAGE
SYMBOL MIN A b c D E E1 E2 E3 e L Q S1 N 0.355 0.055 0.005 0.198 0.015 0.004 -0.472 -0.300 0.030 DIMENSION NOM 0.210 0.017 0.005 0.820 0.480 -0.310 0.085 0.050 BSC 0.365 0.065 0.027 32 0.375 0.075 -MAX 0.220 0.020 0.009 0.830 0.488 0.498 ---
Note: All dimensions in inches
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(c)2003 Maxwell Technologies All rights reserved.
512K (64K x 8-Bit) OTP EPROM
Important Notice:
27C512T
These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies' products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies' liability shall be limited to replacement of defective parts.
Memory
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(c)2003 Maxwell Technologies All rights reserved.
512K (64K x 8-Bit) OTP EPROM
Product Ordering Options
Model Number 27C512T RP X X -XX Feature Access Time
27C512T
Option Details
12 = 120 ns 15 = 150 ns 20 = 200 ns
Screening Flow
Monolithic S = Maxwell Class S B = Maxwell Class B I = Industrial (testing @ -55C, +25C, +125C) E = Engineering (testing @ +25C)
Memory
Package
D = Dual In-line Package (DIP) F = Flat Pack
Radiation Feature
RP = RAD-PAK(R) package
Base Product Nomenclature
512K (64K x 8-Bit) OTP EPROM
06.24.03 REV 4
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(c)2003 Maxwell Technologies All rights reserved.

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