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Preliminary 0
Typical Applications * CDMA Cellular Handsets * TDMA Cellular Handsets
RF2376
CELLULAR TDMA/CDMA LINEAR VARIABLE GAIN AMPLIFIER
Product Description
The RF2376 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular band. The features of this device include linear gain control, high gain, and low noise figure. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard miniature 6-lead plastic SOT package.
1.80 1.40 0.50 0.35 0.10 MAX.
TEXT*
1.90
3.10 2.70
3.00 2.60
Shaded lead is pin 1.
Dimensions in mm.
0.90 0.70 1.30 1.00
9 1
0.25 0.10 0.37 MIN.
*When Pin 1 is in upper left, text reads downward (as shown).
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS
Package Style: SOT23-6
Features * 50dB Linear Gain Control Range * 27dB Maximum Gain * Single 2.7V to 3.3V Supply * 30mA Supply Current * High Linearity
RF OUT 1 GND 2 GC 3 ATTEN
6 VCC 5 GND 4 RF IN
* 7dB Noise Figure
Ordering Information
RF2376 RF2376 PCBA Cellular TDMA/CDMA Linear Variable Gain Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A2 010829
4-423
RF2376
Absolute Maximum Ratings Parameter
Supply Voltage DC Current Operating Ambient Temperature Storage Temperature
Preliminary
Rating
0 to +5.0 100 -20 to +85 -40 to +150
Unit
VDC mA C C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Overall
Operating Frequency Usable Frequency Range Maximum Small Signal Gain Linear Gain Control Range Gain Control Slope Input VSWR Output IP3 Noise Figure Maximum Average Output Power Adjacent Channel Power Rejection Alternate Channel Power Rejection Maximum Average Output Power Adjacent Channel Power Rejection
Specification Min. Typ. Max.
836 800 to >1000 27 70 1.5:1 +25 7 +8 -33 -61 +10 -53
Unit
MHz MHz dB dB dB/V dBm dB dBm dBc dBc dBm dBc
Condition
VCC =2.8V, VGC =2.0V, T=25C
24 50
30
2.5:1
Maximum gain. Over entire gain control range Maximum gain TDMA modulation TDMA modulation; POUT =+8dBm TDMA modulation; POUT =+8dBm CDMA modulation; VCC =3.0V, maximum gain setting, ACPR<-52dBc. CDMA modulation; VCC =3.0V. For PIN >-23dBm, adjustment of PIN is required to maintain ACPR performance over gain control range. For PIN < -23dBm, ACPR performance is maintained over entire gain control range. CDMA modulation; POUT =+10dBm, VCC =3.0V. T = 25C Specifications Operating range VCC =2.8V, VGC =2.0V VCC =3.0V, VGC =2.0V VCC =2.8V, VGC =0.4V
+22
-32 -57
Alternate Channel Power Rejection
-67
dBc
Power Supply
Supply Voltage Gain Control Voltage Supply Current 2.8 2.7 to 3.3 0 to 2.0 30 34 V V V mA mA mA mA
25
40 18 1.5
VGC Current
4-424
Rev A2 010829
Preliminary
Pin 1 2 3 Function RF OUT GND GC Description
RF output pin. This pin is DC coupled and requires VCC through a bias inductor sized accordingly to provide a high pass transformation with a series capacitor. Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Analog gain control pin. This pin controls the gain of the IC. Minimum gain occurs at VGC <0.4V and maximum gain is achieved with VGC =2.0V. 50dB of linear gain control with little variation of input P1dB is available. RF input pin. This pin is AC coupled. Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. Power supply. This pin should be connected to a regulated supply and requires a bypass capacitor. Voltage is supplied through this pin to the first stage collector; this voltage also controls the bias. Gain may be tuned by adjusting the value of the feed inductor.
RF2376
Interface Schematic
4 5 6
RF IN GND VCC
Application Schematic
47 nH RF IN 4 5 4.7 nH VCC 47 nF Note orientation of package in this schematic. 6 1 12 nH VCC ATTEN 3 2 2.7 pF RF OUT GC
Rev A2 010829
4-425
RF2376
Evaluation Board Schematic
P1 P1-1 1 2 P1-3 P1-4 3 4 5 CON5 C2* J1 RF IN L1 6.8 nH 4 C1 100 pF 5 6 ATTEN 3 2 1 VGC R1* DNI L3 12 nH VGC GND VREG/VCC VREG/VCC GND C9 33 pF C4 47 nH VREG/VCC
Preliminary
C16 1 uF + C5 47 nF C7 100 pF C6 2.7 pF J2 RF OUT
VREG L2 4.7 nH
2376400B
Note orientation of package in this schematic.
C3 47 nF
C8 33 pF
4-426
Rev A2 010829
Preliminary
Evaluation Board Layout Board Size 2.0" x 2.0"
Board Thickness 0.028"; Board Material FR-4
RF2376
Rev A2 010829
4-427
RF2376
Gain versus VGC (CDMA)
40.0
Preliminary
Noise Figure versus VGC @ Room Temperature
30.0
(Frequency 836MHz @ -18dBm, VCC=3.0V, VGC=2.0V to 0.0V)
Gain[dB]@-40C
(Frequency 836MHz, VCC=3.0V, VGC=2.0V to 0.5V)
30.0
Gain[dB]@+25C Gain[dB]@+85C 25.0
NF [dB]
20.0
10.0
Noise Figure (dB)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
20.0
Gain (dB)
15.0
0.0
-10.0
10.0
-20.0
5.0
-30.0 0.0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
VGC (V)
VGC (V)
4.5 4.0
VSWR versus VGC @ Room Temperature (Frequency 836MHz, VCC=3.0V, VGC=2.0V to 0.1V)
RF INPUT PORT [S11] RF OUTPUT PORT [S22]
ACPR versus VGC (CDMA)
0.0
(Frequency 836MHz @ -18dBm, VCC=3.0V, VGC=2.0V to 0.0V)
ACPR[dBc]@-40C
-10.0
ACPR[dBc]@+25C ACPR[dBc]@+85C
3.5 3.0
Adjacent Channel Power (dBc)
-20.0
VSWR S11
-30.0
2.5 2.0 1.5 1.0
-40.0
-50.0
-60.0 0.5 -70.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
VGC (V)
VGC (V)
Alternate Channel Power versus VGC (CDMA)
0.0 -10.0
Gain versus VGC (Single Tone Test)
40.0
(Frequency 836MHz @ -18dBm, VCC=3.0V, VGC=2.0V to 0.0V)
Altr.Ch.Power[dBc]@-40C Altr.Ch.Power[dBc]@+25C Altr.Ch.Power[dBc]@+85C
(RF Frequency 836MHz @ -17dBm, VCC=3.0V, VGC=2.0V to 0.0V)
Gain [dB] @ -40C Gain [dB] @ +25C Gain [dB] @ +85C
30.0
Alternate Channel Power (dBc)
-20.0 -30.0
20.0
10.0 -40.0 -50.0 -60.0 -70.0 -80.0 -90.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 -20.0
Gain (dB)
0.0
-10.0
-30.0
-40.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
VGC (V)
VGC (V)
4-428
Rev A2 010829
Preliminary
IGC versus VGC (VCC=3.0V, VGC=2.0V to 0.0V)
Igc [uA]
RF2376
Gain & OIP3 versus VGC
40.0
1500.0 1000.0 500.0 0.0
(CDMA Frequency 836MHz, VCC=3.0V, VGC=2.0V to 0.0V)
Gain [dB]
30.0
OIP3 [dBm]
20.0
10.0 -500.0 -1000.0 -1500.0 -2000.0 -2500.0 -3000.0 0. 0. 0. 0. 0. 0. 0. 0. 0. 0. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 2. 012345678901234567890 -20.0
Gain (dB)
IGC (uA)
0.0
-10.0
-30.0
-40.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
VGC (V)
VGC (V)
Gain versus Input Power
40.0
Output Power versus Input Power
30.0 20.0 10.0
(Frequency 836MHz, VCC=3.0V)
Gain[dB]@Vgc 2.0V Gain[dB]@Vgc 1.5V Gain[dB]@Vgc 1.0V Gain[dB]@Vgc 0.5V Gain[dB]@Vgc 0.3V
(Frequency 836MHz, VCC=3.0V, VGC=2.0V)
30.0
20.0
Output Power (dBm)
0.0 -10.0 -20.0 -30.0 -40.0 -50.0 -60.0 Pout[dBm]@Vgc 2.0V Pout[dBm]@Vgc 1.5V Pout[dBm]@Vgc 1.0V Pout[dBm]@Vgc .5V Pout[dBm]@Vgc 0.3V
10.0
Gain (dB)
0.0
-10.0
-20.0
-30.0
-40.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 5.0 10.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
5.0
10.0
Input Power (dBm)
Input Power (dBm)
Rev A2 010829
4-429
RF2376
Preliminary
4-430
Rev A2 010829

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