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| BSS 89 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Logic Level * VGS(th) = 0.8...2.0V Pin 1 G Type BSS 89 Type BSS 89 BSS 89 BSS 89 Pin 2 D Marking SS89 Pin 3 S VDS 240 V ID 0.3 A RDS(on) 6 Package TO-92 Ordering Code Q62702-S519 Q62702-S619 Q62702-S385 Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 240 240 Unit V VDS V DGR RGS = 20 k Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID 14 20 A 0.3 TA = 25 C DC drain current, pulsed IDpuls 1.2 TA = 25 C Power dissipation Ptot 1 W TA = 25 C Semiconductor Group 1 12/05/1997 BSS 89 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 125 E 55 / 150 / 56 K/W Unit C Tj Tstg RthJA Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 240 1.5 0.1 10 10 4.5 5.3 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 0.2 A VDS = 240 V, VGS = 0 V, Tj = 25 C VDS = 240 V, VGS = 0 V, Tj = 125 C VDS = 60 V, VGS = 0 V, Tj = 25 C Gate-source leakage current IGSS 100 nA 6 10 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 10 V, ID = 0.3 A VGS = 4.5 V, ID = 0.3 A Semiconductor Group 2 12/05/1997 BSS 89 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.14 0.33 115 15 8 - S pF 155 25 12 ns 5 8 VDS 2 * ID * RDS(on)max, ID = 0.3 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Rise time tr 10 15 VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Turn-off delay time td(off) 30 40 VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Fall time tf 20 27 VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Semiconductor Group 3 12/05/1997 BSS 89 Electrical Characteristics, at Tj = 25C, unless otherwise specified Symbol Values Parameter min. Reverse Diode Inverse diode continuous forward current IS typ. max. Unit A 0.9 0.3 1.2 V 1.4 TA = 25 C Inverse diode direct current,pulsed ISM - TA = 25 C Inverse diode forward voltage VSD VGS = 0 V, IF = 0.6 A Semiconductor Group 4 12/05/1997 BSS 89 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 0.32 1.2 W A 1.0 Ptot 0.9 0.8 ID 0.24 0.20 0.7 0.6 0.5 0.12 0.4 0.3 0.2 0.04 0.1 0.0 0 20 40 60 80 100 120 C 160 0.00 0 20 40 60 80 100 120 C 160 0.08 0.16 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C Drain-source breakdown voltage V(BR)DSS = (Tj) 285 V 275 V(BR)DSS 270 265 260 255 250 245 240 235 230 225 220 215 -60 -20 20 60 100 C 160 Tj Semiconductor Group 5 12/05/1997 BSS 89 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 0.70 A 0.60 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 19 Ptot = 1W lkj i h g f VGS [V] a 2.0 b 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 16 a b c ID 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 a c e RDS (on) 14 12 10 8 6 4 d e f g ih j c d e f g d h i j k l b 2 VGS [V] = a 2.5 2.0 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 6.0 g 7.0 h i j 8.0 9.0 10.0 2 4 6 8 V 11 0 0.00 0.10 0.20 0.30 0.40 A 0.60 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s VDS 2 x ID x RDS(on)max 1.2 Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, VDS2 x ID x RDS(on)max 0.55 S A ID 0.8 gfs 0.45 0.40 0.35 0.30 0.6 0.25 0.20 0.15 0.2 0.10 0.05 0.0 0 1 2 3 4 5 6 7 8 V 10 0.00 0.00 0.10 0.20 0.30 0.40 A ID 0.55 0.4 VGS Semiconductor Group 6 12/05/1997 BSS 89 Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 0.3 A, VGS = 10 V 15 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 13 RDS (on) 12 11 10 9 8 7 6 5 4 3 2 1 0 -60 VGS(th) 3.6 3.2 2.8 98% typ 2.4 98% 2.0 1.6 1.2 typ 2% 0.8 0.4 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 1 pF C 10 2 A IF Ciss 10 0 10 1 Coss Crss 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 12/05/1997 |
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