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2SD2391
Transistors
Medium Power Transistor (60V, 2A)
2SD2391
Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40x40x0.7mm ceramic board). 4) Complements the 2SB1561. External dimensions (Unit : mm)
MPT3
4.5 1.6
0.5
1.5
(1)
(2)
(3)
1.0
2.5 4.0
0.4
0.4 1.5
0.5 1.5 3.0
0.4
(1)Base (2)Collector (3)Emitter
Absolute maximum ratings (Ta=25C)
Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg
+
Limits 60 60 6 2 6 0.5 2 150 -55 to +150
Unit V V V A A W
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
+
1 2
C C
1 Single pulse, Pw=10ms 2 When mounted on a 40 40 0.7mm ceramic board.
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
Measured using pulse current
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE1 hFE2 fT Cob
Min. 60 60 6 - - - 120 45 - -
Typ. - - - - - 0.13 - - 210 21
Max. - - - 0.1 0.1 0.35 270 - - -
Unit V V V A A V - - MHz pF IC=50A IC=1mA IE=50A VCB=50V
Conditions
VEB=5V IC/IB=1A/50mA VCE/IC=-2V/-0.5A VCE/IC=-2V/-1.5A VCE=2V, IE=-0.5A, f=100MHz VCB=10V, IE=0A, f=1MHz
Rev.A
1/3
2SD2391
Transistors
Packaging specifications and hFE
Type 2SD2391 MPT3 Q DT T100 1000
Denotes hFE
Package hFE Marking Code Basic ordering unit (pieces)
Electrical characteristic curves
2.0
COLLECTOR CURRENT : lC (A)
1.6
10mA 8mA 6mA
1 500m
Ta=1 00C
DC CURRENT GAIN : hFE
12mA
COLLECTOR CURRENT : IC (A)
20
mA
18
mA 16mA
14mA
5 2
VCE=2V
1000 500
Ta=100C
VCE=2V
200 100 50 20 10 5 2
25C
-40C
1.2
100m 50m 20m 10m 5m 2m 1m 0
0.8
4mA
0.4
IB=0mA
2mA
0.0
0
1
2
3
Ta=25C 4 5
25C -40C
200m
0.2 0.4 0.6
0.8 1.0
1.2
1.4 1.6
1 10m 20m
50m 100m 200m 500m 1
2
5
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (A)
Fig.1 Grounded emitter output characteristics
Fig.2 Grounded emitter propagation characteristics
Fig.3 DC current gain vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
1000 500
Ta=25C
1000 500 200 100 50
25C Ta=100C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
IC/IB=20
1000 500 200 100 50 20 10 5 2 1 5m 10m 20m 50m100m 200m 500m 1
IC/IB=50 20 10
Ta=25C
DC CURRENT GAIN : hFE
200 100 50 20 10 5 2 1 10m 20m 50m 100m 200m 500m 1
VCE=5V 2V 1V
20 10 5 2 1 5m 10m 20m
-40C
2
5 10
50m 100m 200m 500m 1
2
5
2
5
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( )
Fig.5 Collector-emitter saturation voltage vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs. collector current ( )
Rev.A
2/3
2SD2391
Transistors
COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)
1000
TRANSITION FREQUENCY : fT (MHz)
Cib 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 Cob
COLLECTOR CURRENT : lC (A)
500 200 100 50 20 10 5 2 1 -2m -10m -100m
Ta=25C VCE=2V
1000 500
Ta=25C f=1MHz IE=0A IC=0A
50 20 10 Ic max(Pulse) PW 5 2 1 500m
DC
=1 0
Pw
ms =1 PW s
0m s
0m =1
200m 100m 50m
-1
-2
50 100
20m Ta=25C Single pulse 10m 0.2 0.5 1 2
5
10 20
50 100 200 500
EMITTER CURRENT : IE (A)
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Gain bandwidth product vs. emitter current
Fig.8 Iutput capacitance vs. voltage
Fig.9 Safe operating area
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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