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| Advance Product Information August 5, 2002 29-37 GHz Compact Driver Amplifier Key Features * * * * * TGA4510-EPU 0.25 um pHEMT Technology >16 dB Nominal Gain @ 30 GHz 16 dBm Nominal Psat Bias Conditions: Vd = 6V, Id = 60 mA Compact Chip Size: 1.1 x 0.8 x 0.1 mm3 Primary Applications * LMDS Point-to-Point Base Stations Fixtured Measured Performance Bias Conditions: Vd = 6V, Id = 60 mA 5% 20 18 16 14 Gain (dB) 12 10 8 6 4 2 0 26 28 30 32 34 Frequency (GHz) 36 38 40 * * 20 18 16 14 Pout (dBm) 12 10 8 6 4 2 0 26 28 30 , Pwr(in) 4 2 0 -2 -4 -6 -8 -10 32 34 Frequency (GHz) 36 38 40 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information TABLE I MAXIMUM RATINGS 1/ Symbol Parameter + V Positive Supply Voltage + I Positive Supply Current (Quiescent) |IG| Gate Current PD Power Dissipation PIN Input Continuous Wave Power TCH Operating Channel Temperature TM Mounting Temperature (30 seconds) TSTG Storage Temperature 1/ 2/ 3/ 4/ Value 8V 81mA 3.5 mA TBD 18 dBm 150 C 320 C -65 C to 150 C August 5, 2002 TGA4510-EPU Notes 2/ 3/, 4/ These values represent the maximum operable values of this device Total current for the entire MMIC These ratings apply to each individual FET Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25oC 5oC) Parameter Frequency Band Drain Operating Voltage Gate Operating Voltage Drain Current, Quiescent Typical DC Power Consumption Small Signal Gain Gain Flatness Input Return Loss Output Return Loss TOI (Single Tone Power) @ 30 GHz CW Output Power @ P1dB (dBm) Units GHz V V mA W dB dB dB dB dBm dBm Typical 29 - 37 6 -0.6 60 0.36 15.8 - 17.6 < 0.05 >8 > 11 22 14.0 - 16.2 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information August 5, 2002 TGA4510-EPU Measured Fixtured Data Bias Conditions: Vd = 6V, Id = 60mA 5% 20 18 16 14 Gain (dB) 12 10 8 6 4 2 0 26 28 30 32 34 Frequency (GHz) 36 38 40 20 18 16 14 Pout (dBm) 12 10 8 6 4 2 0 26 28 30 , Pwr(in) 4 2 0 -2 -4 -6 -8 -10 32 34 Frequency (GHz) 36 38 40 Note: Pwr (in) = 0dBm is approximately P1dB (dbM) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information August 5, 2002 TGA4510-EPU Measured Fixtured Data Bias Conditions: Vd = 6V, Id = 60mA 5% 0 -2 Input Return Loss (dB) -4 -6 -8 -10 -12 -14 -16 26 28 30 32 34 36 38 40 Frequency (GHz) 0 -2 Output Return Loss (dB) -4 -6 -8 -10 -12 -14 -16 -18 -20 26 28 30 32 34 36 38 40 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information August 5, 2002 TGA4510-EPU Measured Fixtured Data Bias Conditions: Vd = 6V, Id = 60 mA 5%, @ 30 GHz 20 18 100 95 90 85 Gain (dB),Pout (dBm) 16 14 12 10 8 6 4 2 0 -10 -8 -6 -4 -2 0 2 4 Gain Pout Id 75 70 65 60 55 50 Pin (dBm) Bias Conditions: Vd = 6V, Id = 60 mA 5%, @ 36 GHz 20 18 100 95 90 85 Gain (dB),Pout (dBm) 16 14 12 10 8 6 4 2 0 -10 -8 -6 -4 -2 0 Gain Pout Id 75 70 65 60 55 50 4 Pin (dBm) 2 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. Id (mA) 5 80 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Id (mA) 80 Advance Product Information August 5, 2002 TGA4510-EPU Measured Fixtured Data Bias Conditions: Vd = 6V, Id = 60 mA 5%, @ 30 GHz TOI, Fund/Tone, OIP3/Tone (dBm) 30 20 10 0 -10 -20 -30 -40 -50 -60 -70 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 TOI Fund IMD3 Pin (dBm/tone) Bias Conditions: Vd = 6V, Id = 60 mA 5%, @ Pin = -10dBm/Tone 30 25 TOI (dBm), Gain (dB) 20 15 10 TOI Gain 5 0 26 28 30 32 34 36 38 40 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Advance Product Information August 5, 2002 TGA4510-EPU Chip Assembly and Bonding Diagram VG RF In RF Out VD GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 Advance Product Information August 5, 2002 TGA4510-EPU Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8 Advance Product Information August 5, 2002 TGA4510-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 9 |
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