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MITSUBISHI
PM75B4LA060
FLAT-BASE TYPE INSULATED PACKAGE
PM75B4LA060
FEATURE
a) Adopting new 5th generation IGBT (CSTBT TM ) chip, which performance is improved by 1m fine rule process. For example, typical Vce(sat)=1.55V @Tj=125C b) Over-temperature protection by detecting Tj of the CSTBT TM chips and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series. * 2 75A, 600V Current-sense IGBT type inverter * Monolithic gate drive & protection logic * Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) * UL Recognized Yellow Card No.E80276(N) File No.E80271
APPLICATION Photo voltaic power conditioner
PACKAGE OUTLINES
LABEL
11 7 19.75 (19.75) 3.25 16 3-2 16 3-2 120 106 16 3-2 15.25 6-2 2-5.5 MOUNTING HOLES
Dimensions in mm
16 3
12
17.5
1
5
9
13
19
14.5
B
U
V
W
32
6-M5 NUTS 10.75 12 32.75 23 23 23
11.75
13.5
55
2-2.5
17.5
N P
22 + 1 - 0.5
(SCREWING DEPTH)
Terminal code
19-0.5
1. 2. 3. 4. 5. 6. 7.
VUPC UFO UP VUP1 VVPC VFO VP
8. 9. 10. 11. 12. 13. 14.
VVP1 NC NC NC NC VNC VN1
15. 16. 17. 18. 19.
NC UN VN NC Fo
7
13 31
12
Oct. 2005
MITSUBISHI
PM75B4LA060
FLAT-BASE TYPE INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
NC FO 1.5k
VNC NC
VN1
VN
UN
NC NC NC NC
VP VVP1 VVPC VFO
UP VUPC UFO
VUP1
1.5k
1.5k
GND IN Fo
Vcc
GND IN Fo
Vcc
GND IN Fo
Vcc
GND IN Fo
Vcc
GND SC OT OUT
GND SC OT OUT
GND SC OT OUT
GND SC OT OUT
B
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCES IC ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C Ratings 600 75 150 390 -20 ~ +150 Unit V A A W C
CONTROL PART
Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC UN * VN-VNC Applied between : UFO-VUPC, VFO-VVPC, FO-VNC Sink current at UFO, VFO, FO terminals Ratings 20 20 20 20 Unit V V V mA
Oct. 2005
MITSUBISHI
PM75B4LA060
FLAT-BASE TYPE INSULATED PACKAGE
TOTAL SYSTEM
Parameter Supply Voltage Protected by VCC(PROT) SC VCC(surge) Supply Voltage (Surge) Storage Temperature Tstg Isolation Voltage Viso Symbol Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = +125C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. Ratings 450 500 -40 ~ +125 2500 Unit V V C Vrms
THERMAL RESISTANCES
Symbol Rth(j-c)Q Rth(j-c)F Rth(c-f) Parameter Junction to case Thermal Resistances Contact Thermal Resistance Condition Inverter IGBT part (per 1/4 module) Inverter FWDi part (per 1/4 module) Case to fin, (per 1 module) Thermal grease applied (unit : mm) arm axis X Y UP IGBT FWDi 30.4 30.4 -0.8 -8.3 VP IGBT FWDi 61.7 61.7 -0.8 -8.3 UN IGBT FWDi 39.7 39.7 -1.2 6.3 VN IGBT FWDi 52.4 52.4 -1.2 6.3 (Note-1) (Note-1) (Note-1) Min. -- -- -- Limits Typ. -- -- -- Max. 0.32 0.53 0.038 Unit
C/W
(Note-1) Tc (under the chip) measurement point is below.
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Condition VD = 15V, IC = 75A VCIN = 0V (Fig. 1) -IC = 75A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 0V15V VCC = 300V, IC = 75A Tj = 125C Inductive Load VCE = VCES, VCIN = 15V (Fig. 5) Tj = 25C Tj = 125C (Fig. 2) Min. -- -- -- 0.3 -- -- -- -- -- -- Limits Typ. 1.7 1.55 2.2 0.7 0.1 0.2 0.9 0.2 -- -- Max. 2.3 2.0 3.3 1.4 0.2 0.4 1.8 0.4 1 10 Unit V V
Switching Time
s
(Fig. 3,4) Tj = 25C Tj = 125C
Collector-Emitter Cutoff Current
mA
Oct. 2005
MITSUBISHI
PM75B4LA060
FLAT-BASE TYPE INSULATED PACKAGE
CONTROL PART
Symbol ID Vth(ON) Vth(OFF) SC toff(SC) OT OTr UV UVr IFO(H) IFO(L) tFO Parameter Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width VD = 15V, VCIN = 15V Applied between : UP-VUPC, VP-VVPC UN * VN-VNC -20 Tj 125C, VD = 15V VD = 15V VD = 15V Detect Tj of IGBT chip -20 Tj 125C VD = 15V, VFO = 15V VD = 15V Condition VN1-VNC V*P1-V*PC Min. -- -- 1.2 1.7 150 -- 135 -- 11.5 -- -- -- 1.0 Limits Typ. 15 6 1.5 2.0 -- 0.2 145 125 12.0 12.5 -- 10 1.8 Max. 25 12 1.8 2.3 -- -- -- -- 12.5 -- 0.01 15 -- Unit mA V A s C V mA ms
(Fig. 3,6) (Fig. 3,6) Trip level Reset level Trip level Reset level (Note-2) (Note-2)
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol -- -- -- Parameter Mounting torque Mounting torque Weight Main terminal Mounting part -- Condition screw : M5 screw : M5 Min. 2.5 2.5 -- Limits Typ. 3.0 3.0 380 Max. 3.5 3.5 -- Unit N*m N*m g
RECOMMENDED CONDITIONS FOR USE
Symbol VCC VD VCIN(ON) VCIN(OFF) fPWM tdead Parameter Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VN1-VNC Applied between : UP-VUPC, VP-VVPC UN * VN-VNC Using Application Circuit of Fig. 8 For IPM's each input signals (Fig. 7) Recommended value 450 (Note-3) 15 1.5 0.8 9.0 20 2.0 Unit V V V kHz s
(Note-3) With ripple satisfying the following conditions : dv/dt swing 5V/s, Variation 2V peak to peak
Oct. 2005
MITSUBISHI
PM75B4LA060
FLAT-BASE TYPE INSULATED PACKAGE
PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing "SC" tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.)
P, (U,V)
IN Fo IN Fo
P, (U,V)
VCIN
(0V)
V
Ic
VCIN
(15V)
V
-Ic
VD (all)
U,V, (N)
VD (all)
U,V, (N)
Fig. 1 VCE(sat) Test
Fig. 2 VEC Test
a) Lower Arm Switching
P
VCIN (15V) VCIN
Signal input (Upper Arm) Signal input (Lower Arm)
Fo
Fo
U,V
trr Irr
CS
VCE Ic 90%
Vcc 90%
N
b) Upper Arm Switching
VCIN Signal input (Upper Arm) Signal input (Lower Arm)
VD (all)
P
Ic
10%
10% tc(on)
10% tc(off)
10%
Fo
U,V
VCIN
CS
Vcc
td(on)
tr
td(off)
tf
VCIN (15V)
Fo
(ton= td(on) + tr)
N
(toff= td(off) + tf)
VD (all)
Ic
Fig. 3 Switching Time and SC Test Circuit
Fig. 4 Switching Time Test Waveform
VCIN Short Circuit Current
P, (U,V) A
IN Fo
Constant Current SC Trip
Pulse VCE
VCIN (15V)
Ic
VD (all)
U,V, (N)
Fo toff(SC)
Fig. 5 ICES Test
Fig. 6 SC Test Waveform
IPM' input signal VCIN (Upper Arm)
0V
IPM' input signal VCIN (Lower Arm)
1.5V
2V
1.5V
t
0V
2V
1.5V
2V
t
tdead
tdead
tdead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead Time Measurement Point Example
Oct. 2005
MITSUBISHI
PM75B4LA060
FLAT-BASE TYPE INSULATED PACKAGE
20k
VUP1 UFO 1.5k UP
P Vcc Fo IN OUT OT SC U
IF
0.1 10
VUPC
GND GND
20k
VVP1 VFO 1.5k VP
IF
0.1 10
Vcc Fo IN
OUT OT SC V
~
AC Output
VVPC NC NC NC NC
GND GND
W
20k
IF UN
0.1 10
Vcc Fo IN
OUT OT SC N
GND GND
20k
IF VN
0.1 10
Vcc Fo IN
OUT OT SC
GND GND VN1
NC VNC B FO 1.5k NC
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tPLH, tPHL 0.8s, Use High CMR type. Slow switching opto-coupler: CTR > 100% Use 3 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal.
* * * * * *
Oct. 2005
MITSUBISHI
PM75B4LA060
FLAT-BASE TYPE INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) Tj = 25C 15V VD = 17V 13V
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (TYPICAL) 2 VD = 15V
100
COLLECTOR CURRENT IC (A)
80
1.5
60
1
40
20
0.5 Tj = 25C Tj = 125C 0 0 20 40 60 80 100
0
0
0.5
1
1.5
2
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (TYPICAL) 2
SWITCHING TIME tc(on), tc(off) (s)
SWITCHING TIME CHARACTERISTICS (TYPICAL) 100
7 5 3 2
1.5
tc(off) tc(on) tc(off)
1
10-1
7 5 3
0.5 IC = 75A Tj = 25C Tj = 125C 0 12 13 14 15 16 17 18
10-2 0 10
VCC = 300V VD = 15V Tj = 25C 2 Tj = 125C Inductive load
2 3 5 7 101 2 3 5 7 102
CONTROL SUPPLY VOLTAGE VD (V)
COLLECTOR CURRENT IC (A)
101
SWITCHING TIME ton, toff (s)
7 5 3 2
SWITCHING LOSS ESW(on), ESW(off) (mJ/Pulse)
SWITCHING TIME CHARACTERISTICS (TYPICAL) VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load
SWITCHING LOSS CHARACTERISTICS (TYPICAL) 101
7 5 3 2
100
7 5
VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load
ESW(on)
100
7 5 3 2
toff ton ton
3 ESW(on) 2
ESW(off)
10-1
7 5 3 2
toff
ESW(off)
10-1 0 10
2
3
5 7 101
2
3
5 7 102
10-2 0 10
2
3
5 7 101
2
3
5 7 102
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
Oct. 2005
MITSUBISHI
PM75B4LA060
FLAT-BASE TYPE INSULATED PACKAGE
COLLECTOR REVERSE CURRENT -IC (A)
7 5 3 2
7 5 3 2
7 5 3 2
100
7 5 3 2
Irr
101
7 5 3 2
VCC = 300V VD = 15V Tj = 25C Tj = 125C Inductive load
101
7 5 3 2
10-1
7 5 3 2
trr
100
7 5 3 2
Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5
100
10-2 0 10
2
3
5 7 101
2
3
5 7 102
10-1
EMITTER-COLLECTOR VOLTAGE VEC (V)
COLLECTOR CURRENT IC (A)
REVERSE RECOVERY LOSS Err (mJ/Pulse)
FWDi REVERSE RECOVERY LOSS CHARACTERISTICS (TYPICAL) 101 7 VCC = 300V 5 VD = 15V 3 Tj = 25C 2 Tj = 125C 100 Inductive load
7 5 3 2
10-1
7 5 3 2
Err
10-2 0 10
2
3
5 7 101
2
3
5 7 102
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT PART) 100
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi PART) 100
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c)
3 2
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c)
7 5
7 5 3 2
10-1
7 5 3 2
10-1
7 5 3 2
10-2
Per unit base = Rth(j - c)Q = 0.32C/ W 10-3 -5 10 2 3 5 710-4 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s)
7 5 3 Single Pulse 2
10-2
Per unit base = Rth(j - c)F = 0.53C/ W 10-3 -5 10 2 3 5 710-4 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s)
7 5 3 Single Pulse 2
REVERSE RECOVERY CURRENT lrr (A)
REVERSE RECOVERY TIME trr (s)
FWDi FORWARD VOLTAGE CHARACTERISTICS (TYPICAL) 102 VD = 15V
FWDi REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 101 102
Oct. 2005

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