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| MWI 50-12 E7 MKI 50-12 E7 IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13 1 2 5 6 9 10 16 15 14 3 4 17 11 12 13 1 2 9 10 16 14 IC25 = 90 A = 1200 V VCES VCE(sat) typ. = 1.9 V 3 4 17 7 8 11 12 MWI MKI IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC Ptot TC = 25C TC = 80C VGE = 15 V; RG = 22 ; TVJ = 125C RBSOA; clamped inductive load; L = 100 H VCE = 900 V; VGE = 15 V; RG = 22 ; TVJ = 125C SCSOA; non-repetitive TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 90 62 100 VCES 10 350 V V A A A s W Features * NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits * HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current * Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate - UL registered, E 72873 Typical Applications Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1.9 2.1 4.5 0.8 200 80 50 680 30 6.0 4.0 3.8 350 2.4 6.5 0.8 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.35 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 50 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 50 A VGE = 15 V; RG = 22 * MWI - AC drives - power supplies with power factor correction * MKI - motor control . DC motor amature winding . DC motor excitation winding . synchronous motor excitation winding - supply of transformer primary winding . power supplies . welding . X-ray . battery charger VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 50 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2004 IXYS All rights reserved 1-4 451 MWI 50-12 E7 MKI 50-12 E7 Diodes Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 110 70 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Module Symbol TVJ TVJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Conditions IF = 50 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 50 A; diF/dt = -500 A/s; TVJ = 125C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.2 1.6 40 200 2.6 V V A ns 0.61 K/W IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.95 V; R0 = 24 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 6 m Thermal Response Conditions operating Maximum Ratings -40...+125 -40...+150 -40...+125 2500 2.7 - 3.3 C C C V~ Nm IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions IGBT (typ.) Cth1 = 0.22 J/K; Rth1 = 0.26 K/W Cth2 = 1.74 J/K; Rth2 = 0.09 K/W Free Wheeling Diode (typ.) Cth1 = 0.151 J/K; Rth1 = 0.483 K/W Cth2 = 1.003 J/K; Rth2 = 0.127 K/W Characteristic Values min. typ. max. 5 m mm mm 0.02 180 K/W g Creepage distance on surface Strike distance in air with heatsink compound 6 6 Dimensions in mm (1 mm = 0.0394") (c) 2004 IXYS All rights reserved 2-4 pins 5, 6, 7, 8 and 15 for MWI only 451 pins 5, 6, 7, 8 and 15 for MWI only MWI 50-12 E7 MKI 50-12 E7 120 A VGE = 17 V 15 V 13 V 11 V 100 IC IC 120 A 100 80 60 VGE = 17 V 15 V 13 V 11 V 80 60 40 20 TVJ = 25C 9V 9V 40 20 TVJ = 125C 0 0 1 2 VCE 0 3 V 4 0 1 2 VCE 3 V4 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 160 A IC VCE = 20 V 160 A 120 IF 80 TVJ = 125C 120 80 40 TVJ = 125C TVJ = 25C 40 TVJ = 25C 0 4 6 8 10 VGE 0 12 V 14 0 1 2 VF V 3 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 300 ns 240 180 120 TVJ = 125C VR = 600 V IF = 60 A 20 V 100 A trr 15 VGE 80 IRM trr 60 10 40 5 VCE = 600 V IC = 50 A 20 IRM 60 0 0 0 100 200 300 400 nC 500 QG 0 0 200 400 600 -di/dt MWI5012E7 800 A/s 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 451 (c) 2004 IXYS All rights reserved 3-4 MWI 50-12 E7 MKI 50-12 E7 20 mJ td(on) 100 ns 90 80 70 60 50 Eoff 8 mJ td(off) 800 ns 600 t 16 Eon 6 VCE = 600 V VGE = 15 V RG = 22 TVJ = 125C 12 8 4 Eon tr t 4 400 VCE = 600 V VGE = 15 V RG = 22 TVJ = 125C 40 30 20 10 0 2 Eoff tf 200 0 0 20 40 60 80 IC 0 20 40 60 80 IC 0 100 A 120 100 A Fig. 7 Typ. turn on energy and switching times versus collector current 300 ns 250 200 150 t Eoff Fig. 8 Typ. turn off energy and switching times versus collector current 12 mJ 1200 ns 1000 800 600 Eoff 15.0 mJ 12.5 Eon 10.0 7.5 VCE = 600 V VGE = 15 V IC = 50 A TVJ = 125C td(on) 10 8 6 4 2 0 0 VCE = 600 V VGE = 15 V IC = 50 A TVJ = 125C td(off) t Eon 5.0 2.5 0.0 0 20 40 60 80 RG tr 100 50 0 400 200 tf 100 120 20 40 60 80 RG 100 120 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 1 K/W 0.1 Fig.10 Typ. turn off energy and switching times versus gate resistor 120 A diode IGBT 100 ICM 80 60 40 ZthJC 0.01 single pulse 0.001 20 0 0 RG = 22 TVJ = 125C 200 400 600 800 1000 1200 1400 V VCE 0.0001 0.00001 0.0001 0.001 MWI5012E7 0.01 0.1 t 1 s 10 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2004 IXYS All rights reserved 4-4 451 |
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