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| FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES * * * * * High Output Power: P1dB = 31.0dBm (Typ.) High Gain: G1dB = 21.0dB (Typ.) High PAE: add = 30% (Typ.) Impedance Matched Zin/Zout = 50 0.25m PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC amplifier designed for operation in the17.5-20.0 GHz frequency range. This amplifier has an input and output designed for use in 50 systems.This device is well suited for point-to-point communication applications. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain Voltage Gate Voltage Input Power Storage Temperature Operating Backside Temperature Symbol VDD VGG Pin Tstg Top Condition Rating 10 -3.0 22 -65 to +175 -40 to +85 Unit V V dBm C C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively. 3. This product should be hermetically packaged ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25C) Item Frequency Range Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Drain Current Power-Added Efficiency Input Return Loss Output Return Loss Symbol f P1dB G1dB Iddrf add RLi RLo VDD = 6V IDD = 650mA (Typ.) ZS = ZL = 50 29 16 Conditions Min. Limits Typ. Max. Unit GHz 26 950 dBm dB mA % dB dB 17.5 - 20.0 31 21 700 30 -12 -8 Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1) G.C.P.: Gain Compression Point Edition 1.0 May 2000 1 FMM5805X 17.5-20GHz Power Amplifier MMIC P1dB, G1dB vs. FREQUENCY -15 34 32 P1dB (dBm), G1dB (dB) 30 28 26 24 22 20 18 17 17.5 18 18.5 19 19.5 20 20.5 21 Frequency (GHz) G1dB VDD = 6V IDD = 650mA OUTPUT POWER vs. IMD VDD = 6V IDD = 650mA -20 P1dB 20GHz IM3 18GHz IM3 -25 -30 IMD (dBc) -35 -40 -45 -50 -55 -60 -65 12 14 16 18 20 22 24 26 28 30 20GHz IM5 18GHz IM5 Total Output Power (dBm) ASSEMBLY DRAWING VGG 0.15F VDD 0.15F 220pF 220pF RFout RFin Gap to be minimized at the output 220pF 220pF 0.15F 0.15F VGG VDD 2 FMM5805X 17.5-20GHz Power Amplifier MMIC BONDING LAYOUT VGG1 VDD1 VDD2 VDD4 RFout RF in VDD3 VGG2 VDD5 S-PARAMETERS VDD = 6V, IDS = 650mA FREQUENCY S11 (MHZ) MAG ANG 14000 14500 15000 15500 16000 16500 17000 17500 18000 18500 19000 19500 20000 20500 21000 21500 22000 22500 23000 .672 .596 .502 .402 .297 .225 .212 .256 .321 .364 .405 .440 .458 .431 .328 .116 .209 .457 .598 144.5 138.7 133.1 132.5 136.1 147.8 169.1 -172.7 -169.9 -169.8 -172.0 -179.7 173.4 161.5 145.7 138.9 -112.3 -133.3 -154.3 S21 MAG 3.454 4.871 7.047 7.936 11.029 12.663 12.727 12.061 11.271 10.470 10.272 9.732 9.580 9.979 10.109 9.421 7.116 4.684 2.873 S12 ANG MAG .006 .006 .006 .008 .007 .007 .008 .008 .009 .010 .010 .010 .009 .007 .007 .006 .007 .009 .011 S22 ANG MAG .821 .754 .659 .536 .399 .316 .357 .471 .555 .585 .578 .533 .471 .388 .325 .282 .224 .186 .162 ANG 114.2 102.2 87.0 67.3 34.4 -19.3 -77.0 -117.9 -144.7 -163.0 -178.4 170.5 162.5 156.4 156.3 158.9 165.0 178.1 -165.7 165.4 134.6 106.3 68.9 28.2 -13.5 -58.7 -97.8 -133.1 -167.0 159.4 129.4 92.7 55.9 14.0 -36.9 -92.0 -139.4 176.7 -90.6 -84.4 -90.4 -101.5 -95.3 -96.5 -93.8 -90.3 -92.5 -92.2 -100.8 -109.5 -107.3 -115.9 -110.0 -91.9 -84.0 -73.9 -77.9 Download S-Parameters, click here 3 FMM5805X 17.5-20GHz Power Amplifier MMIC CHIP OUTLINE 0 VGG1 110 2630 2520 2250 2460 2395 VDD1 VGG1 680 710 VDD2 1160 VGG1 2210 VDD4 3360 2940 Unit: m RFout 1115 1315 RFin 110 0 170 235 0 710 0 110 VGG2 1160 VDD3 2210 VGG2 2940 VDD5 3470 Chip Size: 3.4730m x 2.6330m VGG1, VGG2: One bonding is available Chip Thickness: 7020m Pad Dimensions: 1. DC 80m x 80m 2. RF 120m x 80m For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not ingest. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0699M200 4 |
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