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| Datasheet File OCR Text: |
| PROCESS CPD82X Schottky Diode High Current, Low VF Schottky Diode Chip Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 14.6 x 14.6 MILS 5.5 MILS 11.8 x 11.8 MILS Al - 30,000A Au - 12,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 52,965 PRINCIPAL DEVICE TYPES CMDSH2-3 CMDSH2-4L CMOSH2-4L CMUSH2-4L CMKSH2-4L CMXSH2-4L 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (20- January 2006) |
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