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| PROCESS Schottky Diode CPD48 Central TM High Current Schottky Diode Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 14 x 14 MILS 9.0 MILS 9.0 x 9.0 MILS Al - 30,000A Au - 18,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 62,250 PRINCIPAL DEVICE TYPES CMPSH-3 CMPSH-3A CMPSH-3C CMPSH-3S BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central TM PROCESS CPD48 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) |
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