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APTM50DUM19G
Dual common source MOSFET Power Module
VDSS = 500V RDSon = 19m typ @ Tj = 25C ID = 163A @ Tc = 25C
D1 Q1
D2 Q2
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies
G2
G1
S1 S
S2
G1 S1
D1
S
D2
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant
S2 G2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM50DUM19G - Rev 3
Max ratings 500 163 122 652 30 22.5 1136 46 50 2500
Unit V A V m W A mJ
July, 2006
APTM50DUM19G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Typ
Tj = 25C
T j = 125C
VGS = 10V, ID = 81.5A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V
19 3
Max 200 1000 22.5 5 200
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 163A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 163A R G = 1 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 163A, R G = 1 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 163A, R G = 1
Min
Typ 22.4 4.8 0.36 492 132 260 18 35 87 77 3020 2904 4964 3384
Max
Unit nF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25C Tc = 80C VGS = 0V, IS = - 163A IS = -163A, VR = 250V diS/dt = 400A/s 680 57
Max 163 122 1.3 8
Unit A V V/ns ns C
July, 2006 2-6 APTM50DUM19G - Rev 3
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 163A di/dt 700A/s VR VDSS Tj 150C
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APTM50DUM19G
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 3 2
Typ
Max 0.11 150 125 100 5 3.5 280
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3-6
APTM50DUM19G - Rev 3
July, 2006
APTM50DUM19G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.9 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
Low Voltage Output Characteristics 700 I D, Drain Current (A)
V GS=10&15V
Transfert Characteristics 500 ID, Drain Current (A)
VDS > ID(on)xR DS(on)MAX 250s pulse test @ < 0.5 duty cycle
600 500 400 300 200 100 0 0
8V 7.5V 7V 6.5V 6V 5.5V
400 300 200
T J=25C
100
T J=125C
0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A)
Normalized to VGS=10V @ 81.5A VGS=10V
TJ=-55C
25
0
1
2
3
4
5
6
7
8
VGS , Gate to Source Voltage (V) DC Drain Current vs Case Temperature 180 160 140 120 100 80 60 40 20 0
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0
V GS=20V
100
200
300
400
25
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4-6
APTM50DUM19G - Rev 3
July, 2006
ID, Drain Current (A)
50 75 100 125 TC, Case Temperature (C)
150
APTM50DUM19G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS (TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss VGS , Gate to Source Voltage (V) 1000
limited by R DSon
2.5 2.0 1.5 1.0 0.5 0.0
ON resistance vs Temperature
VGS =10V ID=81.5A
-50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
100s
100
limited by RDSon
10
Single pulse TJ =150C TC=25C 1
1ms 10ms
1 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=163A 12 T =25C J V =250V
DS
10 8 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC)
July, 2006
VDS=400V
1000
Crss
100
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
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5-6
APTM50DUM19G - Rev 3
APTM50DUM19G
Delay Times vs Current 100
td(off)
Rise and Fall times vs Current
120 100
VDS=333V RG=1 TJ=125C L=100H
t d(on) and td(off) (ns)
80 60 40 20 0 20 60 100 140 180 220 ID, Drain Current (A) 260
V DS =333V RG =1 T J=125C L=100H td(on)
tf
tr and t f (ns)
80 60 40 20 0 20
tr
60
100
140
180
220
260
I D, Drain Current (A) Switching Energy vs Gate Resistance
Switching Energy vs Current
10
Switching Energy (mJ)
16
Switching Energy (mJ)
8 6 4 2 0
VDS=333V RG=1 T J=125C L=100H
Eon
14 12 10 8 6 4 2 0 0
V DS=333V ID=163A T J=125C L=100H
Eoff
Eoff
Eon Eoff
20
60
100
140
180
220
260
2.5
5
7.5
10
12.5
I D, Drain Current (A) Operating Frequency vs Drain Current
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
TJ=150C
350
Frequency (kHz)
300 250 200 150 100 50 0 0 20 40 60 80
VDS=333V D=50% RG=1 TJ=125C TC=75C ZCS
ZVS
IDR, Reverse Drain Current (A)
400
1000
100
10
T J=25C
Hard switching
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
July, 2006
100 120 140
ID, Drain Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTM50DUM19G - Rev 3

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