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APT65GP60J
600V
POWER MOS 7 IGBT
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
(R)
E G C
E
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
* 100 kHz operation @ 400V, 33A * 50 kHz operation @ 400V, 47A * SSOA rated
G E C
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT65GP60J UNIT
600 20 30 130 60 250 250A@600V 431 -55 to 150 300
Watts C Amps Volts
@ TC = 25C
Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1000A) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 1000
A nA
4-2003 050-7439 Rev A
6 2.7
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
2 2
I CES I GES
5000 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT65GP60J
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 65A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 65A
4 5
MIN
TYP
MAX
UNIT
7400 580 35 7.5 210 50 65 250 30 54 91 65 605 1408 896 30 54 128 91 605 1925 1470
MIN TYP MAX UNIT C/W gm ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Safe Operating Area
td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
R G = 5 TJ = +25C
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 65A R G = 5
5
Turn-on Switching Energy (Diode) Turn-off Switching Energy
6
TJ = +125C
J
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
.29 N/A 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JEDS24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7439
Rev A
4-2003
TYPICAL PERFORMANCE CURVES
100 90
IC, COLLECTOR CURRENT (A)
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
APT65GP60J
100 90
IC, COLLECTOR CURRENT (A)
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
80 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 250 TC=25C TC=125C TC=-55C
80 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (VGE = 10V) 16 TC=25C TC=125C TC=-55C
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
14 12 10 8 6 4 2 0 0
IC = 65A TJ = 25C
IC, COLLECTOR CURRENT (A)
200
VCE=120V VCE=300V
150 TJ = -55C 100 TJ = 25C 50 TJ = 125C 0 0 2 3 45 67 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE=480V
1
50
100 150 200 GATE CHARGE (nC) FIGURE 4, Gate Charge
250
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4 3.5 3 2.5 2 1.5 1 0.5 IC =130A
3 2.5 2 IC = 32.5A 1.5 IC =130A IC = 65A
IC = 65A IC = 32.5A
1
0.5
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
0
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 180
0 -50
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
160 140 120 100 80
4-2003 050-7439 Rev A
60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
TYPICAL PERFORMANCE CURVES
60
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
APT65GP60J
160 140 120 100 80 60 40 20 0 VCE = 400V RG = 5 L = 100 H
VGE =15V,TJ=25C VGE =10V,TJ=25C VGE =10V,TJ=125C VGE =15V,TJ=125C
50 VGE= 10V 40 VGE= 15V 30 20 VCE = 400V TJ = 25C or 125C RG = 5 L = 100 H
10
0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 160 140 120
tr, RISE TIME (ns)
TJ = 25 or 125C,VGE = 10V
10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 140 120 100 80 60 40 20
TJ = 25C, VGE = 10V or 15V RG =5, L = 100H, VCE = 400V TJ = 125C, VGE = 10V or 15V
100 80 60 40 20 0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 6000
RG =5, L = 100H, VCE = 400V TJ = 25 or 125C,VGE = 15V
tf, FALL TIME (ns)
10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 5000
EOFF, TURN OFF ENERGY LOSS (J)
VCE = 400V L = 100 H RG = 5
0
EON2, TURN ON ENERGY LOSS (J)
5500 5000 4500 4000 3500 3000 2500 2000 1500 1000
VCE = 400V L = 100 H RG = 5
TJ =125C, VGE=15V
TJ = 125C, VGE = 10V or 15V
4000
TJ =125C,VGE=10V
3000
2000
TJ = 25C, VGE=15V
1000
TJ = 25C, VGE = 10V or 15V
500 TJ = 25C, VGE=10V 0 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 9000
VCE = 400V VGE = +15V TJ = 125C
10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 6000
VCE = 400V VGE = +15V RG = 5
0
Eon2 130A
SWITCHING ENERGY LOSSES (J)
SWITCHING ENERGY LOSSES (J)
8000 7000 6000 5000 4000 3000 2000 1000 0 0
Eon2 130A Eoff 130A
5000
4000
Eoff 130A Eon2 65A
3000
4-2003
2000 Eon2 65A 1000 Eon2 32.5A 0 -50 Eoff 32.5A Eoff 65A
Rev A
Eoff 65A Eoff32.5A
Eon2 32.5A
050-7439
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
10,000 5,000
IC, COLLECTOR CURRENT (A)
300 Cies
APT65GP60J
250
C, CAPACITANCE ( F)
1,000 500 Coes
P
200 150
100 50 Cres
100
50 0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0.30 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.25 0.7
0.20
0.15
0.5 Note:
0.10
0.3
PDM
t1 t2
0.05
0.1 0.05 SINGLE PULSE 10
-4 -3 -2
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
0 10
-5
10 10 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
1.0
187
FMAX, OPERATING FREQUENCY (kHz)
0.069697 0.0174613
100
Junction temp. ( "C)
Power (Watts)
0.1363636
0.226556
50
0.0833333
1.075632
Case temperature
10 7 15
TJ = 125C TC = 75C D = 50 % VCE = 400V RG = 5
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
25 35 45 55 65 75 85 95 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on ) + t r + t d(off ) + t f
4-2003 050-7439 Rev A
Pdiss - Pcond E on 2 + E off
TJ - TC R JC
APT65GP60J
APT30DF60
Gate Voltage TJ = 125 C
td(on)
V CC IC V CE
tr 90%
A D.U.T.
Collector Current
5%
10%
5%
Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
VTEST
Gate Voltage Collector Voltage
TJ = 125 C
*DRIVER SAME TYPE AS D.U.T.
td(off)
90%
tf
A V CE IC 100uH V CLAMP
0
B
10% Switching Energy Collector Current
A DRIVER* D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places)
11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594)
1.95 (.077) 2.14 (.084)
* Emitter
Collector
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
4-2003
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Rev A
* Emitter
Dimensions in Millimeters and (Inches)
Gate
050-7439
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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