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APT30GF60JU3
ISOTOP(R) Buck chopper NPT IGBT
C
VCES = 600V IC = 30A @ Tc = 100C
Application * AC and DC motor control * Switched Mode Power Supplies Features
* Non Punch Through (NPT) THUNDERBOLT IGBT (R)
G
E
A
* * *
- Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration
E G C
A
Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
ISOTOP
Absolute maximum ratings
Symbol VCES IC1 IC2 ICM VGE PD ILM IFA V IFRMS
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation RBSOA clamped Inductive load Current R G=11 Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) TC = 25C
T C = 100C
TC = 25C TC = 25C TC = 25C TC = 80C
60 30 39
A A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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Max ratings 600 58 30 110 20 192
Unit V A V W
APT30GF60JU3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Tj = 25C VGE = 0V VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 30A Tj = 125C VGE = VCE, IC = 700A VGE = 20V, VCE = 0V Min Typ Max 40 1000 2.5 2.8 5 100 Unit A V V nA
3
2.0 2.2 4
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Ets Td(on) Tr Td(off) Tf Eon Eoff Ets
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total switching Losses
Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 300V IC = 30A Resistive Switching (25C) VGE = 15V VBus = 300V IC = 30A R G = 10 Inductive Switching (25C) VGE = 15V VBus = 400V IC = 30A R G = 10 Inductive Switching (150C) VGE = 15V VBus = 400V IC = 30A R G = 10
Min
Typ 1600 150 90 140 10 60 13 41 147 200 17 28 242 34 1.2 15 27 265 41 0.5 1 1.5
Max 1850 220 150 210 15 90 26 80 220 400 30 60 360 70 2 30 50 400 80 1 2 3
Unit pF
nC
ns
ns
mJ ns
mJ
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APT30GF60JU3
Chopper diode ratings and characteristics
Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/s IF = 30A VR = 400V di/dt =200A/s Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/s Min Typ 1.6 1.9 1.4 44 Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C 23 85 160 4 8 130 700 70 1300 30 ns Max 1.8 250 500 Unit V A pF
Tj = 125C Tj = 25C Tj = 125C
A nC ns nC A
Thermal and package characteristics
Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min IGBT Diode 2500 -55
Typ
Max 0.65 1.21 20 150 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
29.2
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APT30GF60JU3
Typical IGBT Performance Curve
0.7 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0.9
0.7
0.5
Single Pulse
0 0.00001
Figure 7, Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
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June, 2006
APT30GF60JU3
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APT30GF60JU3
Typical Diode Performance Curve
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APT30GF60JU3
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APT30GF60JU3
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Anode
Collector
* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
Emitter
Dimensions in Millimeters and (Inches)
Gate
ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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