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| AO4464 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4464 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4464 is Pb-free (meets ROHS & Sony 259 specifications). AO4464L is a Green Product ordering option. AO4464 and AO4464L are electrically identical. Features VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 26m (VGS = 10V) RDS(ON) < 40m (VGS = 4.5V) D S S S G D D D D G SOIC-8 S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C TA=25C TA=70C ID IDM PD TJ, TSTG Maximum 30 20 8.5 7.1 50 3 2.1 -55 to 150 Units V V A W C Symbol t 10s Steady-State Steady-State RJA RJL Typ 31 59 16 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4464 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=5A 10 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 20 20 29.2 31 17 0.76 1 4.3 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 3 13.84 VGS=10V, VDS=15V, ID=8.5A 6.74 1.84 3.32 4.5 VGS=10V, VDS=15V, RL=1.8, RGEN=3 IF=8.5A, dI/dt=100A/s 4.2 20.1 4.9 17.2 8.6 6.5 6.3 30 7.5 21 10 3.6 17 8.1 820 26 38 40 1.7 Min 30 0.004 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 0: Mar 2006 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4464 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 20 ID (A) 15 3.5V 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 45 Normalized On-Resistance 40 RDS(ON) (m) 35 30 25 20 15 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 50 ID=8.5A RDS(ON) (m) 125C IS (A) 40 1.0E+01 1.0E+00 1.0E-01 125C 1.0E-02 1.6 VGS=10V 1.4 VGS=4.5V 1.2 VGS=4.5V VGS=3V 6V 4.5V 5V 4V 16 12 ID(A) 8 125C 4 0 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 25C VDS=5V 20 1 VGS=10V 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 25C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 30 1.0E-03 25C COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4464 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=8.5A Capacitance (pF) 1000 800 Ciss 600 400 Coss 200 0 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 100.0 RDS(ON) limited 100s 1ms 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 50 10s Power (W) 40 30 20 10 0 0.001 TJ(Max)=150C TA=25C ID (Amps) 10.0 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.1 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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