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| SI9529DY Dual N- and P-Channel 2.5-V (G-S) Rated MOSFET Product Summary VDS (V) N-Channel N Channel 20 rDS(on) (W) 0.03 @ VGS = 4.5 V 0.04 @ VGS = 2.5 V 0.05 @ VGS = -4.5 V 0.074 @ VGS = -2.5 V ID (A) "6 "5.2 "5 "4.1 D1 D1 S2 P-Channel P Channel -12 12 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 S1 N-Channel MOSFET D2 D2 P-Channel MOSFET G2 G1 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 20 "8 "6 "4.8 "20 1.7 2.0 1.3 P-Channel -12 "8 "5 "4.0 "20 -1.7 Unit V A W -55 to 150 _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70161. Symbol RthJA N- or P- Channel 62.5 Unit _C/W Siliconix S-49520--Rev. D, 18-Dec-96 1 SI9529DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V VGS = "8 V V, VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -12 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = -12 V, VGS = 0 V, TJ = 55_C On State Drain Currentb On-State ID( ) D(on) VDS w 5 V, VGS = 4.5 V VDS v -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 6 A Drain-Source On State Drain Source On-State Resistanceb rDS( ) DS(on) VGS = -4.5 V, ID = -5 A VGS = 2.5 V, ID = 5.2 A VGS = -2.5 V, ID = -4.1 A Forward Transconductance b gf fs VDS = 10 V, ID = 6 A VDS = -9 V, ID = -5 A IS = 1.7 A, VGS = 0 V IS = -1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 0.023 0.039 0.028 0.051 24 16 0.75 -0.75 1.2 -1.2 V S 0.03 0.05 0.04 0.074 W A 0.6 -0.6 "100 "100 1 -1 5 -5 mA V Symbol Test Condition Min Typa Max Unit Gate-Body Gate Body Leakage IGSS nA Diode Forward Voltageb VSD Dynamica Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 6 A Gate Source Charge Gate-Source Qgs P-Channel VDS = -6 V VGS = -4.5 V, ID = -5A 6 V, 45V 5A Gate-Drain Gate Drain Charge Qgd d N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel N Ch l VDD = 10 V, RL = 10 W , ID ^ 1 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = -10 V, RL = 10 W 10 V ID ^ -1 A, VGEN = -4.5 V, RG = 6 W 1 4.5 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 1.7 A, di/dt = 100 A/ms IF = -1.7 A, di/dt = 100 A/ms N-Ch P-Ch 21 21 2.9 3 6.5 6 30 20 70 40 70 100 30 60 70 67 60 40 140 80 140 200 60 120 100 100 ns nC 40 40 Turn-On Turn On Delay Time td( ) d(on) Rise Time tr Turn-Off Turn Off Delay Time td( ff) d(off) Fall Time tf Source-Drain Source Drain Reverse Recovery Time trr Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. 2 Siliconix S-49520--Rev. D, 18-Dec-96 SI9529DY Typical Characteristics (25_C Unless Otherwise Noted) 20 N-Channel Output Characteristics VGS = 4.5, 4, 3.5, 3, 2.5 V 2V 20 Transfer Characteristics 16 15 I D - Drain Current (A) 12 I D - Drain Current (A) 10 8 5 TC = 125_C 25_C 4 1.5 V 1.0 V 0 0 1 2 3 4 5 0 0.5 -55_C 1.5 2.0 2.5 3.0 0 VDS - Drain-to-Source Voltage (V) 1.0 VGS - Gate-to-Source Voltage (V) 0.05 On-Resistance vs. Drain Current 3000 2500 C - Capacitance (pF) 2000 1500 1000 Capacitance rDS(on) - On-Resistance ( W ) 0.04 VGS = 2.5 V VGS = 4.5 V 0.02 0.03 Ciss Coss 500 0 Crss 0.01 0 0 5 10 ID - Drain Current (A) 15 20 0 2 4 6 8 10 12 VDS - Drain-to-Source Voltage (V) 5 VGS - Gate-to-Source Voltage (V) VDS = 10 V ID = 6 A Gate Charge 1.8 1.6 rDS(on) - On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature 4 VGS = 4.5 V ID = 6 A 3 2 1 0 0 5 10 15 20 25 Qg - Total Gate Charge (nC) 0 50 100 150 TJ - Junction Temperature (_C) Siliconix S-49520--Rev. D, 18-Dec-96 3 SI9529DY Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S - Source Current (A) 10 rDS(on) - On-Resistance ( W ) 0.10 N-Channel On-Resistance vs. Gate-to-Source Voltage 0.08 0.06 0.04 ID = 6 A 0.02 TJ = 25_C 1 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0.4 0.2 VGS(th) Variance (V) -0.0 Threshold Voltage 30 ID = 250 mA Single Pulse Power 24 Power (W) 18 -0.2 -0.4 -0.6 -0.8 -50 12 6 0 50 TJ - Temperature (_C) 100 150 0 0.01 0.1 1 Time (sec) 10 30 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) 4 Siliconix S-49520--Rev. D, 18-Dec-96 SI9529DY Typical Characteristics (25_C Unless Otherwise Noted) 20 P-Channel Output Characteristics VGS = 5, 4.5, 4, 3.5, 3 V 2.5 V 20 Transfer Characteristics 16 15 I D - Drain Current (A) 12 I D - Drain Current (A) 10 8 2V 5 4 TC = 125_C 25_C -55_C 1.5 2.0 2.5 3.0 1V 1.5 V 0 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0.5 1.0 VGS - Gate-to-Source Voltage (V) 0.10 On-Resistance vs. Drain Current 3000 2500 C - Capacitance (pF) 2000 1500 1000 500 0 Crss Capacitance rDS(on) - On-Resistance ( W ) 0.08 VGS = 2.5 V VGS = 4.5 V 0.04 0.06 Ciss Coss 0.02 0 0 5 10 ID - Drain Current (A) 15 20 0 2 4 6 8 10 12 VDS - Drain-to-Source Voltage (V) 5 VGS - Gate-to-Source Voltage (V) VDS = 6 V ID = 5 A Gate Charge 1.8 1.6 rDS(on) - On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature 4 VGS = 4.5 V ID = 5 A 3 2 1 0 0 5 10 15 20 25 Qg - Total Gate Charge (nC) 0 50 100 150 TJ - Junction Temperature (_C) Siliconix S-49520--Rev. D, 18-Dec-96 5 SI9529DY Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode Forward Voltage 20 0.10 P-Channel On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 TJ = 150_C rDS(on) - On-Resistance ( W ) 0.08 0.06 ID = 5 A 0.04 0.02 TJ = 25_C 1 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0.6 0.4 Threshold Voltage 30 Single Pulse Power ID = 250 mA VGS(th) Variance (V) 0.2 Power (W) 24 18 -0.0 -0.2 -0.4 -0.6 -50 12 6 0 50 TJ - Temperature (_C) 100 150 0 0.01 0.1 1 Time (sec) 10 30 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) 6 Siliconix S-49520--Rev. D, 18-Dec-96 This datasheet has been download from: www..com Datasheets for electronics components. |
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