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MG600J2YS61A
MITSUBISHI IGBT Module
MG600J2YS61A(600V/600A 2in1)
High Power Switching Applications Motor Control Applications
* * * * Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. Low thermal resistance VCE (sat) = 2.2 V (typ.)
Equivalent Circuit
1
5 6 7 FO E1/C2
4 1 2 3
OT
FO
E2 Signal terminal 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open
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Package Dimensions
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
Signal Terminal Layout
7 5
8 2.54 25.4 0.6 6
1. 5.
G (L) G (H)
2. 6.
FO (L) FO (H)
3. 7.
E (L) E (H)
4. 8.
VD Open
3 1
4 2.54 2
2.54
Weight: 375 g
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Maximum Ratings (Ta = 25C)
Stage Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque DC 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO IFO Tj Tstg Tope Visol Rating 600 20 600 1200 600 A 1200 2770 20 20 20 150 -40~125 -20~100 2500 (AC 1 min) 3 (M5) W V V mA C C C V Nm Unit V V A
Electrical Characteristics (Tj = 25C)
1. Inverter Stage
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Switching time Turn-off time Fall time Reverse recovery time Forward voltage Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) toff tf trr VF IF = 600 A VCC = 300 V, IC = 600 A VGE = 15 V, RG = 5.1 (Note 1) Test Condition VGE = 20 V, VCE = 0 VGE = +10 V, VCE = 0 VCE = 600 V, VGE = 0 VCE = 5 V, IC = 600 mA VGE = 15 V, IC = 600 A Tj = 25C Tj = 125C Min 6.0 0.10 Typ. 7.0 2.2 125 2.2 Max +3/-4 100 1.0 8.0 2.5 2.8 1.00 2.00 0.50 0.50 2.6 V s nF Unit mA nA mA V V
VCE = 10 V, VGE = 0, f = 1 MHz
Note 1: Switching time test circuit & timing chart
2. Control (Tc = 25C)
Characteristics Fault output current Over temperature Fault output delay time Symbol OC OT td (Fo) Test Condition VGE = 15 V VCC = 300 V, VGE = 15 V Min 720 100 Typ. Max 125 6.5 Unit A C s
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3. Module (Tc = 25C)
Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition Inverter IGBT stage Inverter FRD stage With silicon compound Min Typ. 0.013 Max 0.045 0.068 C/W Unit C/W
Switching Time Test Circuit
RG -VGE
IF
VCC IC RG L
Timing Chart
90% 10%
VGE
90% Irr Irr IC trr 20% Irr 90%
10% td (on) td (off)
10%
tf
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Remark

Short circuit capability is 6 s after fault output signal. Please keep following condition to use fault output signal. * VCC < 375 V = * 13.8 V < VGE < 16.0 V = = * RG > 5.1 = * Tj < 125C =

To use this product, VGE must be provided higher than 13.8 V. In case VGE is less than 13.8 V, fault signal FO may not be output even under error conditions.

Characteristics P-N power terminal supply voltage Gate voltage Gate resistance Switching frequency Symbol VCC VGE RG fc Min 13.8 5.1 Typ. 300 15 Max 375 16 20 Unit V V kHz

For parallel use of this product, please use the same rank for both VCE (sat) and VF among IGBT in parallel without fail. VCE (sat)
VCE (sat) 20 22 24 26 Min 1.8 1.9 2.1 2.3 Max 2.0 2.2 2.4 2.5
VF
VF D E F Min 1.9 2.1 2.3 Max 2.2 2.4 2.6
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IC - VCE
600 Common emitter Tj = 25C 500 VGE = 20 V 15 V 12 V (A) Collector current IC 400
300
10 V
200
100
9V
0 0
1
2 Collector-emitter voltage
3 VCE (V)
4
5
IC - VCE
600 Common emitter Tj = 125C 500 15 V VGE = 20 V (A) 400 12 V 10 V
Collector current IC
300 9V 200
100
0 0
1
2 Collector-emitter voltage
3 VCE (V)
4
5
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VCE - VGE
12 (V) 10 8 6 4 2 300 A 0 0 5 10 Gate-emitter voltage VGE (V) 15 20 Common emitter Tj = 25C
Collector-emitter voltage VCE
600 A
IC = 900 A
VCE - VGE
12 (V) 10 8 6 600 A 4 2 300 A 0 0 5 10 Gate-emitter voltage VGE (V) 15 20 IC = 900 A Common emitter Tj = 125C
Collector-emitter voltage VCE
VCE - VGE
12 (V) 10 8 6 4 2 300 A 0 0 5 10 Gate-emitter voltage VGE (V) 15 20 Common emitter Tj = 40C
Collector-emitter voltage VCE
600 A IC = 900 A
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IC - VGE
1000 Common emitter VCE = 5 V 800
(A) Collector current IC 600 400
Tj = 125C
-40 C
25C 200
0 0
4 Gate-emitter voltage VGE
8 (V)
12
IF - V F
600 Common cathode VGE = 0 500 -40C
Forward current
IF (A)
400
300 125C 200 Tj = 25C
100
0 0
0.5
1
1.5 Forward voltage VF (V)
2
2.5
3
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Switching time - RG
10000 Common emitter VCC = 300 V IC = 600 A VGE = 15 V 3000
Tj = 25C Tj = 125C toff ton
Switching time (ns)
td (on) 1000 td (off) tr
300 tf
100 0
5
10 Gate resistance
15 RG ()
20
25
Switching time - IC
10000 Common emitter VCC = 300 V RG = 5.1 VGE = 15 V
3000
Tj = 25C Tj = 125C toff
1000 Switching time (ns)
ton td (on) td (off)
300
tr
100
tf
30
10 0
100
200
300
400 (A)
500
600
700
Collector current IC
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Eon, Eoff - RG
1000 Common emitter VCC = 300 V IC = 600 A VGE = 15 V 300 Eon, Eoff (mJ)
Tj = 25C Tj = 125C
Eon Eoff
100
Switching loss 30 10 0
5
10 Gate resistance
15 RG ()
20
25
Eon, Eoff - IC
100 Common emitter VCC = 300 V RG = 5.1 VGE = 15 V 30 Eon, Eoff (mJ)
Tj = 25C Tj = 125C
Eoff Eon
10
Switching loss
3
1 0
100
200
300
400 (A)
500
600
700
Collector current IC
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Irr, trr - IF
1000 Common emitter VCC = 300 V RG = 5.1 VGE = 15 V 300
Tj = 25C Tj = 125C
trr
Reverse recovery time trr (ns) Reveres recovery current Irr (A)
100
Irr 30
10 0
100
200
300 Forward current IF (A)
400
500
600
Edsw - IF
10.00
Reveres recovery loss Edsw
(mJ)
3.00
1.00
0.30 Common emitter VCC = 300 V RG = 5.1 VGE = 15 V 0.10 0 100 200 300 Forward current 400 IF (A) 500 Tj = 25C Tj = 125C 600 700
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VCE, VGE - QG
500 Common emitter RL = 0.5 Tj = 25C 400 (V) 16 Gate-emitter voltage VGE (V) 20
Collector-emitter voltage VCE
300 200 V 300 V 100 V
12
200
8 VCE = 0
100
4
0 0
1000
2000
3000 Charge QG (nC)
4000
5000
0 6000
C - VCE
1000000
300000 Cies 100000 (pF)
30000
Coes
Capacitance C
10000
3000
Cres
1000
300
VGE = 0 V f = 1 MHz Tc = 25C 0.1 1 Collector-emitter voltage VCE (V) 10 100
100 0.01
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Reverse bias SOA
10000
3000
1000 (A) Collector current IC 300 100 30 10
3
1 0
Tj = 125C RG = 5.1 VGE = 15 V 100 200 300 400 500 VCE (V) 600 700
Collector-emitter voltage
Rth - tw
1 Tc = 25C
0.1 (C/W) Diode stage
Rth (j-c)
Transistor stage
0.01
0.001 0.001
0.01
0.1 Pulse width tw (s)
1
10
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