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| FMM5116X 20-32GHz Upconverter MMIC FEATURES * * * * Integrated Monolithic Upconverter High Linearity Single Supply Voltage Operation High Reliability DESCRIPTION The FMM5116X is a double, single balanced diode mixer upconverter designed for applications in the 20 to 32GHz frequency range. The device consists of a low noise mixer, LO amplifier, and LO frequency doubler. This upconverter is uniquely suited for point-to-point radios, local multi-point distribution systems (LMDS) and satellite communications, as it offers a high dynamic range over a large bandwidth. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25C) Parameter DC Supply Voltage Input Power Input Power Storage Temperature Symbol VDD1,2 PinIF PinLO Tstg Rating 8 20 10 -65 to +175 Unit V dBm dBm C RECOMMENDED OPERATING CONDITIONS Item DC Supply Voltage Input LO Power Level Operating Backside Temperature Note 1: This product should be hermetically packaged. Symbol VDD1,2 PinLO Tbs Min. 0.0 -45 Recommend Typ. 5.0 3.0 25 Max. 5.0 110 Unit V dBm C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item RF Frequency Range LO Frequency Range IF Frequency Range (Note 2) Conversion Gain Conversion Gain Flatness (fixed fIF, swept fLO) (fIF=1.0GHz) Conversion Gain Flatness (fixed fLO, swept fIF) (fLO=13.5GHz) Return Loss (RF/LO) Return Loss (IF) Input P1dB at IF Port 3rd Order Input Intercept Point DC Current Consumption RF Current Consumption Symbol fRF fLO fIF G G G RLRF, RLLO RLIF P1dBIFIN IIP3 IDC IRF VDD1,2=5V, VGG=0V, PLO=3dBm, PIF=0dBm Conditions Min. 20 9.5 0.1 -18 Limits Typ. Max. 32 16.5 -10 3 2 12 4 15 23 100 140 3 150 200 Unit GHz GHz GHz dB dB dB dB dB dBm dBm mA mA Note 1: The electrical characteristics are measured on a sample basis at 10pcs./wafer. Criteria: (accept/reject)=(0/1) Note 2: The IF frequency range is dependent on the selected LO and RF frequency. Edition 1.3 May 2003 1 FMM5116X 20-32GHz Upconverter MMIC CONVERSION GAIN vs. FREQUENCY VDD1,2=5V, PLO=3dBm, PIF=0dBm, fIF=1.0GHz IM3 vs. FREQUENCY 30 20 IM3 Suppression (dBc), IIP3 (dBm) 10 0 -10 -20 -30 -40 -50 -5 LSB USB Conversion Gain (dB) -10 -15 VDD1,2=5V, f=10MHz, PLO=3dBm, PIF=0dBm Input IP3 1GHz 2GHz 3GHz IM3 Suppr. 1GHz 2GHz 3GHz -20 -25 -30 14 16 18 20 22 24 26 28 30 32 34 36 38 RF Frequency (GHz) -60 11 13 LO Frequency (GHz) 15 CONVERSION GAIN vs. FREQUENCY 0 VDD1,2=5V, LO=13.5GHz -2 P =3dBm, LO PIF=0dBm -4 2xLO OUTPUT POWER vs. FREQUENCY VDD1,2=5V, PLO=3dBm, PIF=0dBm, fIF=1GHz -5 2x LO Output Power (dBm)@RF Port -10 -15 -20 -25 -30 -35 -40 Conversion Gain (dB) -6 -8 -10 -12 -14 2xLO=27GHz FIXED 22 23 24 25 26 27 28 29 30 31 32 7 8 9 10 11 12 13 14 15 16 17 18 19 RF Frequency (GHz) LO Frequency (GHz) RF RETURN LOSS vs. FREQUENCY RF Return Loss; fIF=1GHz IF RETURN LOSS vs. FREQUENCY fLO=13GHz -5 -2 -10 RF Return Loss (dB) IF Return Loss (dB) 20 22 24 26 28 30 32 -4 -15 -6 -20 -25 -8 0.5 1 1.5 2 2.5 3 3.5 4 RF Frequency (GHz) IF Frequency (GHz) 2 FMM5116X 20-32GHz Upconverter MMIC BONDING DIAGRAM VDD1,2=5V C=220pF RF LO VGG=GND IF FUNCTIONAL DIAGRAM IF IN RF OUT X2 LO IN 3 FMM5116X 20-32GHz Upconverter MMIC CHIP OUTLINE VDD1 2260 2045 1775 1690 RF VDD2 Unit: m LO Chip Size: 3.085mm x 2.26mm Chip Thickness: 110m (Typ.) Pad Dimensions: 1. RF: 80 x 160m 2. VDD1: 80 x 80m 3. VDD2: 100 x 100m 4. LO: 80 x 160m 5. VGG: 100 x 100m 6. IF: 80 x 120m 460 190 0 IF 0190 1195 2135 2300 2865 3085 VGG For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0502M200 4 |
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