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Ordering number : ENN7021
FC21
TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET
FC21
High-Frequency Amplifier, AM tuner RF Amplifier Applications
Features
*
Package Dimensions
unit : mm 2122
[FC21]
1.9 0.95 0.95 4 3
The FC21 contains both a 2SK1740 equivalent chip and a 2SC2812 equivalent chip in the CP package, thus realizes higher efficiency in device mounting on the PCB.
5
0.16 0.6 0 to 0.1 1.6 2.8
1 2 0.4 2.9
0.6
1 : Collector 2 : Gate 3 : Source 4 : Emitter/Drain 5 : Base SANYO : CP5
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [FET] Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current(Pulse) Base Current Collector Dissipation [Common Ratings] Total Dissipation Junction Temperature Storage Temperature PT Tj Tstg 600 150 --55 to +150 mW C C VCBO VCEO VEBO IC ICP IB PC 55 50 6 150 300 30 200 V V V mA mA mA mW VDSX VGDS IG ID PD 40 -40 10 75 400 V V mA mA mW Symbol Conditions Ratings Unit
Marking : 1C
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81001 TS IM TA-1526 No.7021-1/5
0.8 1.1
FC21
Electrical Characteristics at Ta=25C
Parameter [FET] Gate-to-Drain Breakdown Voltage Gate Cutoff Current Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Noise Figure [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO VCB=35V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=10mA VCB=6V, f=1MHz IC=50mA, IB=5mA IC=50mA, IB=5mA IC=10A, IE=0 IC=1mA, RBE= IE=10A, IC=0 55 50 6 135 100 3 0.1 0.8 0.5 1.0 0.1 0.1 600 MHz pF V V V V V A A V(BR)GDS IGSS VGS(off) IDSS yfs Ciss Crss NF IG=-10A, VDS=0 VGS=--20V, VDS=0 VDS=10V, ID=100A VDS=10V, VGS=0 VDS=10V, VGS=0, f=1kHz VDS=10V, VGS=0, f=1MHz VDS=10V, VGS=0, f=1MHz VDS=10V, Rg=1k, ID=1mA, f=1kHz --40 --1.0 --2.0 40* 22 30 11 2.5 1.5 --3.0 --5.0 75* V nA V mA mS pF pF dB Symbol Conditions Ratings min typ max Unit
* : The FC21 is classified by IDSS as follows : (unit : mA) Rank J K L IDSS 40 to 52 48 to 63 57 to 75 The specifications shown above are for each individual FET or transistor.
Electrical Connection
B E/D S
C
80
G
ID -- VDS
[FET]
80
ID -- VDS
[FET]
Drain Current, ID -- mA
Drain Current, ID -- mA
60
VGS=0
--0.5V
--1.0V
60
VGS=0
--0.5V
40
40
--1.0V
20
20
--1.5V
--2.0V --2.5V
--1.5V
--2.0V --3.0V
0 5 0 4 8 12 16
--3.0V
0 0 1 2 3 4
--2.5V
20 ITR01961
Drain-to-Source Voltage, VDS -- V
ITR01960
Drain-to-Source Voltage, VDS -- V
100
ID -- VGS
[FET]
ID -- VGS
[FET]
100
VDS=10V
80
VDS=10V IDSS=60mA
80
Drain Current, ID -- mA
60
60
=7
5m
40
40
SS
ID
40 m
20
Ta =
75
55
--2
A
C
20
0 --6 --5 --4 --3 --2 --1 0 ITR01963 --6 --5 --4 --3 --2 --1
0 0 ITR01964
Gate-to-Source Voltage, VGS -- V
Gate-to-Source Voltage, VGS -- V
No.7021-2/5
Drain Current, ID -- mA
A
5 C
m
A
25 C
FC21
6 5
VGS(off) -- IDSS
[FET]
Static Drain-to-Source On-State Resistance, RDS(on) --
VDS=10V IDSS=100A
6 5 4
RDS(on) -- IDSS
[FET]
ID=10mA VGS=0
Cutoff Voltage, VGS(off) -- V
4
3
3
2
2
--1.0 3 4 5 7
10
Drain Current, IDSS -- mA
5
yfs -- IDSS
=0) yfs2(V GS
100 ITR01965
3
4
5
7
Drain Current, IDSS -- mA
100
[FET]
yfs -- ID
100 ITR01966
[FET]
Forward Transfer Admittance, yfs -- mS
Forward Transfer Admittance, yfs -- mS
VDS=10V f=1kHz
3
7 5 3 2
VDS=10V f=1kHz
2
yfs1(I =10m A) D
=40 I DSS
mA
55m
A
75m
A
10 7 5
10
7 5 3 4 5 7
3 2 2 3 5 7 2 3 5 7 2 100 ITR01968
Drain Current, IDSS -- mA
7 5
100 ITR01967
10
Drain Current, ID -- mA
2
Ciss -- VDS
[FET]
Crss -- VDS
[FET]
Reverse Transfer Capacitance, Crss -- pF
VGS=0 f=1MHz
VGS=0 f=1MHz
Input Capacitance, Ciss -- pF
10 7 5
3 2
10 7 5
3 2
1.0 7 5 1.0 2 3 5 7 10 2 3 5
3 2 1.0
2
3
5
7
10
2
3
5
Drain-to-Source Voltage, VDS -- V
500
ITR01981
Drain-to-Source Voltage, VDS -- V
ITR01982
PD -- Ta
[FET]
Allowable Power Dissipation, PD -- mW
400
300
200
100
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
ITR01983
No.7021-3/5
FC21
20
IC -- VCE
50A 45A
[TR]
240
IC -- VBE
[TR] VCE=6V
Collector Current, IC -- mA
40A
35A
30A
Collector Current, IC -- mA
16
200
160
12
Ta=75 C
0 0.2 0.4 0.6
25A
8
120
20A
15A
4
80
10A
40
5A
0 0 10 20 30 40
IB=0
0 50 IT03592 0.8 1.0 1.2 IT03593
Collector-to-Emitter Voltage, VCE -- V
3 2
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
1000
[TR] VCE=6V Gain-Bandwidth Product, f T -- MHz
f T -- IC
25C --25C
[TR] VCE=6V
7 5 3 2
DC Current Gain, hFE
1000 7 5 3 2
Ta=75C
25C
--25C
100 7 5 3 2 1.0
100 7 5 0.1 2 3 5 1.0 2 3 5 10 2 3 5 100 2 3 IT03594
2
3
5
7
10
2
3
5
7 100
2
3
Collector Current, IC -- mA
2
Cob -- VCB
Collector Current, IC -- mA
3 2
IT03595
[TR] f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
VCE(sat) -- IC
[TR] IC / IB=10
Output Capacitance, Cob -- pF
10 7 5 3 2
1.0 7 5 3 2 0.1 7 5 3 2 0.01 1.0
1.0 7 5 3 2 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT03596
2
3
5
7
10
2
3
5
7 100
2
3
Collector-to-Base Voltage, VCB -- V
250
PC -- Ta
Collector Current, IC -- mA
IT03597
[TR]
Collector Dissipation, PC -- W
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
ITR10349
No.7021-4/5
FC21
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2001. Specifications and information herein are subject to change without notice.
PS No.7021-5/5

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