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DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ270 NPN 6 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
FEATURES * High power gain * Emitter-ballasting resistors for good thermal stability * Gold metallization ensures excellent reliability. DESCRIPTION Silicon NPN transistor mounted in a 4-lead dual-emitter SOT172A1. envelope with a ceramic cap. All leads are isolated from the mounting base. It is primarily intended for use in MATV and CATV amplifiers. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM VO PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain output voltage up to Tc = 100 C IC = 240 mA; VCE = 18 V; Tj = 25 C IC = 240 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 C IC = 240 mA; VCE = 18 V; f = 800 MHz; Tamb = 25 C dim = -60 dB; IC = 240 mA; VCE = 18 V; RL = 75 ; f(p+q-r) = 793.25 MHz WARNING Product and environmental safety - toxic materials open base CONDITIONS open emitter PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter
1
page
BFQ270
4
3
2
Top view
MBC869
Fig.1 SOT172A1.
MIN. TYP. MAX. UNIT - - - - 60 - - - - - - - - 6 10 1.6 25 19 500 10 - - - - GHz dB V V V mA W
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
September 1995
2
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Tc = 100 C open emitter open base open collector CONDITIONS MIN. - - - - - -65 -
BFQ270
MAX. 25 19 2 500 10 150 200
UNIT V V V mA W C C
THERMAL RESISTANCE SYMBOL Rth j-c PARAMETER thermal resistance from junction to case THERMAL RESISTANCE 10 K/W
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre Ccs fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance collector-stud capacitance transition frequency maximum unilateral power gain (note 1) IC = 240 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 C IC = 240 mA; VCE = 18 V; f = 500 MHz; Tamb = 25 C IC = 240 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 C VO d2 Notes output voltage second order intermodulation distortion note 2 note 3 CONDITIONS IE = 0; VCB = 18 V IC = 240 mA; VCE = 18 V IE = ie = 0; VCB = 18 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCB = 18 V; f = 1 MHz MIN. TYP. MAX. - 60 - - 2 - 4.5 - - - - - 110 3.6 11 2.6 1.2 6 16 10 1.6 -50 100 - - - - - - - - - - pF pF pF pF GHz dB dB V dB UNIT A
S 21 - 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB 2 2 1 - S 11 1 - S 22 2. dim = -60 dB (DIN 45004); IC = 240 mA; VCE = 18 V; RL = 75 ; Vp = VO; fp = 795.25 MHz; Vq = VO -6 dB; fq = 803.25 MHz; Vr = VO -6 dB; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz.
3. IC = 240 mA; VCE = 18 V; RL = 75 ; Vp = Vq = VO = 50.5 dBmV = 335 mV; f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz. September 1995 3
2
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
handbook, full pagewidth
input n-75
, ,,, ,,
V bias L1 VCC (1) C4 R5 C8 C9 C7 L4 L2 R6 L3 L5 C5 L6 L1 C2 L2 DUT C6 C1 C3 R1 R2 R3 R4
MBB488
BFQ270
output n-75
(1) +Vc is equivalent to VCE = Vc - Ic (A) x 17.
Fig.2 Intermodulation and second order intermodulation distortion test circuit.
List of components (see test circuit) DESIGNATION C1 C2, C5, C7, C8 C3 C4 (note 1) C6 C9 L1 (note 1) L2 ML1, ML6 ML2, ML5 ML3, ML4 R1, R2, R3, R4 R5 (note 1) R6 Note 1. Components C4, L1, and R5 are mounted in a cavity in the brass ground plate. The circuit is constructed on a printed circuit board and 10 mm thick brass ground plate, with a relative dielectric constant of (r = 2.2), thickness 1.57 mm; thickness of copper 0.017 mm (E.G. Rogers' RT/Duroid 5880). September 1995 4 DESCRIPTION miniature ceramic plate capacitor multilayer ceramic capacitor multilayer ceramic chip capacitor miniature ceramic plate capacitor miniature ceramic plate capacitor electrolytic capacitor 4.5 turns loosely wound 0.4 mm enamelled copper wire Ferroxcube choke microstripline microstripline microstripline metal film resistor metal film resistor metal film resistor VALUE 0.82 pF 10 nF 2.2 pF 1 nF 1.2 pF 4.7 F 35 nH 5 H 75 75 145 68 240 10 k width 2.46 mm; length 9 mm width 2.46 mm; length 22 mm width 0.5 mm; length 12 mm type MR25 type SFR16T type SFR16T 2322 151 76819 2322 180 73241 2322 180 73103 internal coil diameter 2 mm 3122 108 20153 DIMENSIONS CATALOGUE NO. 2222 680 03827 2222 852 47103 2222 855 12228 2222 630 08102 2222 680 03128 2222 014 28478
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFQ270
Vbias C7 R5 R3 C4 L3 L2 C2 C1 C3 L4 L5 L1 R4 C9
VCC
C8
R6
L2
input n-75
L1
L6 C5 C6
output n-75
R1
R2
MBB487
handbook, full pagewidth
80 mm
copper straps
70 mm
mounting screw (4 x M2.5)
MBB486
Fig.3 Intermodulation test circuit printed circuit board.
September 1995
5
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFQ270
handbook, halfpage
14
MRA747
handbook, halfpage
150
MRA746
Ptot (W) 12 100 hFE
8
50 4
0 0 50 100 150 200 Tcase (oC)
0 0 100 200 300 400 500 IC (mA)
VCE = 18 V; Tj = 25 C.
Fig.4 Power derating curve.
Fig.5
DC current gain as a function of collector current.
handbook, halfpage
5
MRA736
Cre (pF)
handbook, halfpage
8
MRA741
4
fT (GHz) 6 VCE = 18 V
3 12 V 4 2 2 1
0 0 4 8 12 16 20 VCB (V)
0 0 100 200 300 400 500 IC (mA)
ic = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 C.
Fig.6
Feedback capacitance as a function of collector-base voltage.
Fig.7
Transition frequency as a function of collector current.
September 1995
6
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFQ270
handbook, halfpage
25
MRA743
handbook, halfpage
25
MRA745
gain (dB) 20 Gmax 15 GUM GUM 10 Gmax 1 GHz 500 MHz
gain (dB) 20 MSG 15 Gmax GUM GUM 10 Gmax 1 GHz 500 MHz
5
5
0 0 200 400 IC (mA) 600
0 0 200 400 IC (mA) 600
VCE = 12 V.
VCE = 18 V.
Fig.8 Gain as a function of collector current.
Fig.9 Gain as a function of collector current.
MRA744
MRA742
handbook, halfpage
50
handbook, halfpage
50
gain (dB) 40
gain (dB) 40
30 MSG 20
GUM
30 MSG GUM
20
10 Gmax 0 10-2 10-1 1 10
10 Gmax 0 10-2 10-1
f (GHz)
1
f (GHz)
10
Ic = 240 mA; VCE = 12 V.
Ic = 240 mA; VCE = 18 V.
Fig.10 Gain as a function of frequency.
Fig.11 Gain as a function of frequency.
September 1995
7
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFQ270
handbook, halfpage
-30
MRA739
handbook, halfpage
-30
MRA740
dim (dB) -40
dim (dB) -40
-50
-50
-60
-60
-70 75 125 175 225 IC (mA) 275
-70
75
125
175
225
IC (mA)
275
3-tone dim; (VCE = 18 V); fp = 445.25 MHz; Vo = 65.11 dBmV (1.8 V); fq = 453.25 MHz; Vo = 59.11 dBmV; fr = 455.25 MHz; Vo = 59.11 dBmV; f(p+q-r) = 443.25 MHz.
3-tone dim; (VCE = 18 V); fp = 795.25 MHz; Vo = 64.08 dBmV (1.6 V); fq = 803.25 MHz; Vo = 58.08 dBmV; fr = 805.25 MHz; Vo = 58.08 dBmV; f(p+q-r) = 793.25 MHz.
Fig.12 Intermodulation distortion as a function of collector current.
Fig.13 Intermodulation distortion as a function of collector current.
handbook, halfpage
-30 d2
MRA738
handbook, halfpage
-30 d2
MRA737
(dB) -40
(dB) -40
-50
-50
-60
-60
-70
-70
-80 75
125
175
225
275 325 IC (mA)
-80 75
125
175
225
275 325 IC (mA)
VCE = 18 V; fp = 50 MHz; Vo = 50.5 dBmV (0.335 V); fq = 400 MHz; Vo = 50.5 dBmV; f(p+q) = 450 MHz.
VCE = 18 V; fp = 250 MHz; Vo = 50.5 dBmV (0.335 V); fq = 560 MHz; Vo = 50.5 dBmV; f(p+q) = 810 MHz.
Fig.14 Second order intermodulation distortion as a function of collector current.
Fig.15 Second order intermodulation distortion as a function of collector current.
September 1995
8
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFQ270
handbook, full pagewidth
1 0.5 3 GHz 2
0.2
5 10
+j 0 -j 10 0.2 40 MHz 5 0.2 0.5 1 2 5 10
0.5 1 Ic = 240 mA; VCE = 18 V. Zo = 50 .
2
MBB484
Fig.16 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90 120 60
40 MHz 150 30
+
180 50 40 30 20 10 3 GHz 0
-
150
30
120 90 Ic = 240 mA; VCE = 18 V.
60
MBB482
Fig.17 Common emitter forward transmission coefficient (S21).
September 1995
9
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFQ270
handbook, full pagewidth
90 120 60
150
30
3 GHz
+
180 0.5 0.4 0.3 0.2 0.1 40 MHz 0
-
150
30
120 90 Ic = 240 mA; VCE = 18 V.
60
MBB483
Fig.18 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
1 0.5 2
0.2
3 GHz 5 10
+j 0 -j 10 0.2 5 0.2 0.5 1 2 5 10
40 MHz 0.5 1 Ic = 240 mA; VCE = 18 V. Zo = 50 . 2
MBB485
Fig.19 Common emitter output reflection coefficient (S22).
September 1995
10
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
BFQ270
SOT172A1
D
A Q D1 N2 N N3 X M1 D2 A w1 M A c M W
detail X H b
4
b1 H
1
3
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.31 4.34 0.209 0.171 b 3.31 3.04 0.130 0.120 b1 0.89 0.63 c 0.16 0.10 D 5.20 4.95 D1 5.33 5.08 D2 5.33 5.08 H 26.17 24.63 1.03 0.97 M 3.05 2.79 0.12 0.11 M1 1.66 1.39 N 11.82 10.89 N2 8.89 6.90 N3 3.69 2.92 0.145 0.115 Q 2.90 2.31 0.114 0.091 W w1 0.38 8-32 UNC 0.015
0.035 0.006 0.025 0.004
0.205 0.210 0.210 0.195 0.200 0.200
0.065 0.465 0.350 0.055 0.429 0.272
OUTLINE VERSION SOT172A1
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1995
11
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFQ270
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1995
12

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