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APTGT50H120T3G
Full - Bridge Fast Trench + Field Stop IGBT(R) Power Module
13 14
VCES = 1200V IC = 50A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS Compliant Max ratings 1200 75 50 100 20 270 100A @ 1150V Unit V
July, 2006 1-5 APTGT50H120T3G - Rev 1
Q1 18 19
CR1
CR3
Q3 11 10
22 23 Q2
7 8 CR4 Q4
26 27
CR2
4 3
29 15
30
31 R1
32 16
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25C TC = 80C TC = 25C TC = 25C TJ = 125C
A V W
Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT50H120T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V VCE = 1200V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min Typ Max 250 500 2.1 6.5 400 Unit A V V nA
1.4 5.0
1.7 2.0 5.8
Dynamic Characteristics
Symbol Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V,VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 50A R G = 18 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 50A R G = 18 VGE = 15V VBus = 600V IC = 50A R G = 18 Tj = 125C Tj = 125C
Min
Typ 3600 160 90 30 420 70 90 50 520 90 5
Max
Unit pF
ns
ns
mJ 5.5
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 70C IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/s IF = 60A VR = 800V
di/dt =1000A/s
Min 1200
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=1200V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
60 2 2.3 1.8 400 470 1200 4000 2.2
2.5 V
Qrr Er
Reverse Recovery Charge Reverse Recovery Energy
nC mJ
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trr
Reverse Recovery Time
ns
APTGT50H120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.45 0.9 150 125 100 4.7 110
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
2500 -40 -40 -40 2.5
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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17
28
APTGT50H120T3G
Typical Performance Curve
100 80
T J=125C
Output Characteristics (VGE =15V)
T J=25C
Output Characteristics 100
TJ = 125C
80 IC (A) 60 40 20 0
VGE=17V
VGE=13V VGE =15V VGE=9V
IC (A)
60 40 20 0 0 0.5 1 1.5 2 V CE (V) 2.5 3 3.5
0
1
2 VCE (V)
3
4
100 80 60
Transfert Characteristics 12
TJ=25C
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 18 TJ = 125C Eoff Eon Eon
10 8 E (mJ)
TJ=125C
IC (A)
6 4
40 20 0 5 6 7 8 9 V GE (V) 10 11 12
TJ=125C
2 0 10 30 50 IC (A) Reverse Bias Safe Operating Area 120
Eon
70
90
110
Switching Energy Losses vs Gate Resistance 12 11 10 E (mJ) 9 8 7 6 5 4 0 20 40 60 Gate Resistance (ohms) 80
Eoff Eoff VCE = 600V VGE =15V IC = 50A T J = 125C
100 80 IC (A) 60 40 20 0 0 400 800 VCE (V) 1200 1600
VGE =15V TJ =125C RG=18
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 0.001 Single Pulse 0.01 0.1 1 10
IGBT
rectangular Pulse Duration (Seconds)
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APTGT50H120T3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 80
VCE=600V D=50% RG =18 TJ=125C TC=75C
Forward Characteristic of diode 160 140 120 100 IC (A) 80 60
T J=25C T J=125C
60
ZCS ZVS
40
20
hard switching
40 20 0 20 30 40 IC (A) 50 60 70 0 0.5 1 1.5 V F (V) 2
0 0 10
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 Thermal Impedance (C/W) 0.8 0.6 0.5 0.4 0.2 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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