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APTGT100A170T Phase leg Trench + Field Stop IGBT(R) Power Module VBUS Q1 G1 NTC2 VCES = 1700V IC = 100A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile Max ratings 1700 150 100 200 20 560 200A @ 1600V Unit V A V W May, 2005 1-5 APTGT100A170T - Rev 0 E1 OUT Q2 G2 E2 0/VBU S NTC1 G2 E2 OUT VBUS 0/VBUS OUT E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com APTGT100A170T All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 100A Tj = 125C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 250 2.4 6.5 500 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 100A R G = 4.7 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 100A R G = 4.7 Min Typ 9 0.36 0.3 370 40 650 180 400 50 800 300 32 31 Max Unit nF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1700 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=1700V 50% duty cycle IF = 100A IF = 100A VR = 900V di/dt =800A/s 100 1.8 1.9 385 490 28 46 2.2 V ns C May, 2005 APT website - http://www.advancedpower.com 2-5 APTGT100A170T - Rev 0 APTGT100A170T Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.22 0.39 150 125 100 4.7 160 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To Heatsink M5 3400 -40 -40 -40 1.5 Package outline (dimensions in mm) APT website - http://www.advancedpower.com 3-5 APTGT100A170T - Rev 0 May, 2005 APTGT100A170T Typical Performance Curve Output Characteristics (VGE =15V) Output Characteristics 200 TJ = 125C 160 IC (A) 120 80 40 0 VGE =20V 200 175 150 IC (A) T J=25C 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4 TJ=125C VGE =13V VGE=15V V GE=9V 0 1 2 3 V CE (V) 4 5 Transfert Characteristics 200 175 150 E (mJ) 125 IC (A) 100 75 50 25 0 5 6 7 8 9 VGE (V) Switching Energy Losses vs Gate Resistance 100 87.5 75 E (mJ) 62.5 50 37.5 25 12.5 0 0 5 10 15 20 25 30 35 Gate Resistance (ohms) 40 Er Eoff Energy losses vs Collector Current 100 VCE = 900V VGE = 15V RG = 4.7 T J = 125C Eon T J=25C 80 TJ =125C 60 40 Eoff TJ =125C Er 20 0 10 11 12 13 0 25 50 Er 75 100 125 150 175 200 IC (A) Reverse Bias Safe Operating Area 250 VCE = 900V VGE =15V IC = 100A TJ = 125C Eon 200 IC (A) 150 100 50 0 0 400 800 1200 1600 2000 VCE (V) VGE =15V TJ=125C RG =4.7 0.25 Thermal Impedance (C/W) 0.2 0.15 0.1 0.05 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration IGBT Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website - http://www.advancedpower.com 4-5 APTGT100A170T - Rev 0 May, 2005 APTGT100A170T Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 30 25 20 15 10 5 0 0 20 40 60 80 IC (A) 100 120 140 hard switching ZVS ZCS VCE =900V D=50% RG=4.7 TJ =125C TC=75C Forward Characteristic of diode 200 175 150 125 IC (A) 100 75 50 25 0 0 0.5 1 1.5 V F (V) 2 2.5 3 TJ=125C T J=125C TJ =25C maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.5 0.3 0.9 0.7 Diode rectangular Pulse Duration (Seconds) APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTGT100A170T - Rev 0 APT reserves the right to change, without notice, the specifications and information contained herein May, 2005 |
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