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| 2SK3527-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol VDS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Ratings 600 600 17 68 30 17 412 20 5 2.50 220 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W C C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=2.62mH, Vcc=60V *2 Tch <150C = *4 VDS< 600V *5 VGS=-30V = Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = Electrical characteristics (Tc =25C unless otherwise specified) Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=30V VDS=0V ID=8.5A VGS=10V ID=8.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=8.5A VGS=10V RGS=10 VCC=300V ID=17A VGS=10V L=2.62mH Tch=25C IF=17A VGS=0V Tch=25C IF=17A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C Min. 600 3.0 Typ. Max. 5.0 25 250 100 0.37 Units V V A nA S pF 10 10 0.29 20 2280 3420 290 435 16 24 26 39 37 56 78 117 13 19 54 81 15 23 20 30 0.93 0.7 10.0 ns nC 17 1.50 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.568 50.0 Units C/W C/W 1 2SK3527-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Typical Output Characteristics 45 40 35 30 6.5V ID=f(VDS):80s Pulse test,Tch=25C 20V 10V 8V 7.0V 260 240 220 200 180 160 ID [A] PD [W] 140 120 100 80 60 40 25 20 15 6.0V 10 5 VGS=5.5V 20 0 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 14 16 18 20 Tc [C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 100 100 Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 10 10 ID[A] 1 gfs [S] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 1 10 100 VGS[V] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 0.8 0.7 0.6 VGS= 5.5V 6.0V 6.5V 1.0 0.9 0.8 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8.5A,VGS=10V RDS(on) [ ] 0.7 0.5 0.4 0.3 0.2 0.2 0.1 0.0 0 5 10 15 20 25 30 35 40 45 0.1 0.0 -50 -25 0 25 50 75 100 125 150 7.0V RDS(on) [ ] 8V 10V 20V 0.6 0.5 0.4 0.3 typ. max. ID [A] Tch [C] 2 2SK3527-01 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch 7.0 6.5 6.0 5.5 max. Typical Gate Charge Characteristics 24 22 20 18 Vcc= 120V VGS(th)=f(Tch):VDS=VGS,ID=250A VGS=f(Qg):ID=17A, Tch=25C Vcc= 300V VGS(th) [V] 5.0 4.5 16 14 Vcc= 480V VGS [V] min. 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 12 10 8 6 4 2 0 0 20 40 60 80 100 120 Tch [C] Qg [nC] 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode 100 IF=f(VSD):80s Pulse test,Tch=25C Ciss 10 0 10 C [nF] 10 -1 Coss IF [A] 1 3 10 -2 Crss 10 -3 10 -1 10 0 10 1 10 2 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] Typical Switching Characteristics vs. ID 10 3 t=f(ID):Vcc=300V, VGS=10V, RG=10 500 450 400 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=17A 10 2 td(off) 350 300 t [ns] td(on) EAV [mJ] tf 0 1 2 250 200 150 100 50 10 1 tr 10 0 0 -1 10 10 10 10 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3527-01 FUJI POWER MOSFET 10 1 Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T,D=0 10 0 Zth(ch-c) [ C/W] o 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Maximum Avalanche Current Pulsewidth 10 2 IAV=f(tAV):starting Tch=25C. Vcc=60V Avalanche current IAV [A] 10 1 Single Pulse 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 4 |
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