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| 2SC2735 Silicon NPN Epitaxial Application UHF/VHF Local oscillator, frequency converter Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2735 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 3 -- -- 40 -- 600 -- -- -- Typ -- -- -- -- -- -- 0.85 1200 210 130 21 Max -- -- -- 0.5 1.0 -- 1.5 -- -- -- -- pF MHz mV mV dB Unit V V V A V Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 10 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 10 mA VCC = 12 V, IC = 7 mA, f OSC = 300 MHz VCC = 12 V, IC = 7 mA, f OSC = 930 MHz VCC = 12 V, IC = 2 mA, f = 200 MHz, f OSC = 230 MHz (0dBm) VCC = 12 V, IC = 2 mA, f = 200 MHz, f OSC = 230 MHz (0dBm) Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Oscillating output voltage V(BR)EBO I CBO VCE(sat) hFE Cob fT VOSC1 VOSC2 Conversion gain CG Noise figure NF -- 6.5 -- dB Note: Marking is "JC". 2 2SC2735 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current 200 160 100 120 80 50 40 VCE = 10 V 1 10 20 2 5 Collector Current IC (mA) 50 0 0 100 150 50 Ambient Temperature Ta (C) Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (pF) 2.0 Gain Bandwidth Product fT (GHz) 2.0 Collector Output Capacitance vs. Collector to Base Voltage 1.6 1.6 IE = 0 f = 1 MHz 1.2 1.2 0.8 0.8 0.4 VCE = 10 V 1 2 5 10 20 Collector Current IC (mA) 50 0.4 0 0 1 2 5 10 20 50 Collector to Base Voltage VCB (V) 3 2SC2735 Reverse Transfer Capacitance vs. Collector to Base Voltage Reverse Transfer Capacitance Cre (pF) 2.0 Emitter Common IC = 0 V f = 1 MHz Base Time Constant rbb' CC (ps) 20 VCB = 10 V f = 31.8 MHz Base Time Constant vs. Collector Current 1.6 16 1.2 12 0.8 8 0.4 4 0 1 10 20 50 2 5 Collector to Base Voltage VCB (V) 0 4 8 12 16 Collector Current IC (mA) 20 Oscillating Output Voltage vs. Collector Current Oscillating Output Voltage Vosc1 (mV) Oscillating Output Voltage Vosc1 (mV) 500 VCC = 12 V fosc = 300 MHz 250 Oscillating Output Voltage vs. Supply Voltage 400 200 300 150 200 100 IC = 7 mA fosc = 300 MHz 100 50 0 2 4 6 8 Collector Current IC (mA) 10 0 4 8 12 16 Supply Voltage VCC (V) 20 4 2SC2735 Oscillating Output Voltage vs. Collector Current Oscillating Output Voltage Vosc2 (mV) Oscillating Output Voltage Vosc2 (mV) 200 200 Oscillating Output Voltage vs. Supply Voltage 160 160 120 120 80 80 40 VCC = 12 V fosc = 930 MHz 2 4 6 8 Collector Current IC (mA) 10 40 IC = 7 mA fosc = 930 MHz 12 16 4 8 Supply Voltage VCC (V) 20 0 0 Conversion Gain vs. Collector Current 25 Conversion Gain CG (dB) VCC = 12 V f = 200 MHz fosc = 230 MHz (0 dBm) 20 Noise Figure vs. Collector Current 15 Noise Figure NF (dB) 20 16 12 10 8 VCC = 12 V f = 200 MHz fosc = 230 MHz (0 dBm) 1 2 3 4 Collector Current IC (mA) 5 5 4 0 2 4 6 8 Collector Current IC (mA) 10 0 5 2SC2735 VOSC2 UHF Oscillating Output Voltage Test Circuit L3 VCC 470 Ferrite Bead 1.2 p 9p L2 330 2,200 p ISV70 6.8 k 1,000 p L1 1,000 p 120 k D.U.T. VT 1,000 p VBB Vosc Output Unit C : F R: 10 Dimensions of Cavity 15 5 8 26 L1 L2 (Dimensions in mm) (Dimensions in mm) L1 : Polyurethane Coated Copper Wire 1.0 mm L2 : Polyurethane Coated Copper Wire 0.8 mm L3 : 0.3 mm Enameled Copper wire, 10 Turns with 470 (1/4W)Resistor. Test Frequency : fosc = 930 MHz Test Equipment : YHP 4271A Vector Voltmeter 6 10 2SC2735 VOSC1 VHF Oscillating Output Voltage Test Circuit VBB 2.2 k Vosc Output 1.5 p D.U.T. 7p 4,700 p 1.1 M 5.6 p L1 4,700 p 1SV70 200 12 p 20,000 p 4,700 p 1,000 p 200 VCC VT fosc Monitor Unit C : F R: L:H L1 : Inside dia 3 mm, 3 mm Enameled Copper Wire 12 Turns Test Frequency : fosc = 300 MHz 7 2SC2735 VHF Conversion Gain : Noise Figure Test Circuit 2,200 p fosc = 230 MHz (0 dBm) 1.5 p 560 f = 200 MHz Ferrite Bead L2 56 p D.U.T. L4 27 p foat = 30 MHz RL = 50 VCC L1 4.2 p L3 2,200 p 330 2,200 p 18 p 80 p Unit C : F R: VBB L1 : Inside dia 5 mm, 0.5 mm Enameled Copper Wire 4 Turns L2 : Inside dia 4 mm, 0.5 mm Enameled Copper Wire 4 Turns L3 : Inside dia 3 mm, 0.2 mm Enameled Copper Wire 6 Turns L4 : Outside dia 5 mm Bobbin, 0.2 mm Enameled Copper Wire 16 Turns, using Ferrite bead. 8 Unit: mm 0.65 0.10 3 - 0.4 + 0.05 - 0.16 - 0.06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK -- Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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