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| Composite Transistors XN4113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 0.650.15 6 0.95 2.8 -0.3 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 2.9 -0.05 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1-0.1 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings -50 -50 -100 300 150 -55 to +150 Unit V V mA mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: 6S Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -5mA IC = -10mA, IB = - 0.3mA VCC = -5V, VB = - 0.5V, RL = 1k VCC = -5V, VB = -3.5V, RL = 1k VCB = -10V, IE = 1mA, f = 200MHz -30% 0.8 80 47 1.0 +30% 1.2 -4.9 - 0.2 80 - 0.25 V V V MHz k min -50 -50 - 0.1 - 0.5 - 0.1 typ max Unit V V A A mA 0 to 0.05 UN1113 x 2 elements 0.1 to 0.3 0.8 0.16-0.06 +0.2 +0.1 1.450.1 s Features 0.5 -0.05 +0.1 +0.1 1 Composite Transistors PT -- Ta 500 XN4113 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) IC -- VCE -160 IB=-1.0mA -140 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 400 VCE= -10V Ta=25C Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -30 -10 -3 -1 -0.3 -0.1 -25C -0.03 -0.01 -0.1 -0.3 Ta=75C Forward current transfer ratio hFE 300 Ta=75C 25C 200 -25C -0.4mA -0.3mA -0.2mA 25C 100 -0.1mA -8 -10 -12 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 2 |
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