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WSD501H
Surface Monut Schottky Barrier Diode
Features:
*Extremely Low VF . *Very Small Conduction Losses. *Schottky Barrier Diodes Encapsulated in SOD-323 Package.
1 2
SCHOTTKY BARRIER RECTIFIERS 100m AMPERES 40 VOLTS
SOD-323 SOD-323 Outline Demensions Unit:mm
Dim 1.60 1.80 A B 1.15 1.35 C 0.80 1.00 0.25 0.40 D E 0.15 REF H 0.00 0.10 J 0.089 0.377 K 2.30 2.70
PIN 1.CATHODE 2.ANODE
MILLMETERS Min Max
WEITRON
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WSD501H
MAXIMUM RATING Characteristics
Breakdown Voltage Continuous Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (8.3ms1/2 Sine Wave) Storage Temperature
Symbol
BV VR IO IFSM Tstg
WSD 501H
45 40 100 1.0 -40 to+125
Unit
Volts Volts mAmps Amps C
ELECTRICAL CHARACTERISTICS (Ta=25 C) Characteristics
Device Marking Maximum Instantneous Forward Voltage IF=100mA Maximum Instantneous Reverse Current (VR=10V) Typical Junction Capacitance (VR=10V, f=1MHz) VF
Symbol
WSD 501H
JV 0.55
Unit
Volts
IR CJ
30 20
Amps Pf
WEITRON
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WSD501H
Electrical characteristics curves (Ta=25 C unless specified otherwise)
1000
10m
FORWARD CURRENT :IF (mA)
125 C
100 REVERSE CURRENT: I R (A)
1m 100 10 1 0.1
75 C
C
25 C
C
5
10
1
75
-25
25 C
12
C
0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
30
40
FORWARD VOLTAGE:VF (V)
REVERSE VOLTAGE:VR (V)
FIG: 1 Forward characteristics
CAPACITANCE BETWEEN TERMINALS :CT (pF)
Fig.2 Reverse characteristics
100
100 Io CURRENT (%) 80 60 40 20 0
10
0
25
50
75
100
125
1
0
5
AMBIENT TEMPERATURE : Ta ( C)
10 15 20 25 30 35 REVERSE VOLTASGE : VR (V)
Fig. 4 Derating curve (mounting on glass epoxy PCBs)
Fig.3 Capacitance between terminals characteristics
WEITRON
http://www.weitron.com.tw

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