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| Datasheet File OCR Text: |
| NTE3040 Optoisolator NPN Transistor Output Description: The NTE3040 is a gallium arsenide, infrared emitting diode in a 6-Lead DIP type package coupled with a silicon phototransistor. Absolute Maximum Ratings: (TA = +25C, unless otherwise specified) Infrared Emitting Diode Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Derate above 25C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6mW/C Forward Current (Continuous), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Forward Current (Peak), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A (Pulse Width 1sec, 300pps) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Phototransistor Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Derate above 25C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6mW/C Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Emitter to Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current (Continuous), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Device Storage Temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Operating Temperature, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +100C Lead Soldering Temperature (10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C Surge Isolation Voltage (Input to Output) (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V (RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1060V Electrical Characteristics: (TA = +25C, unless otherwise specified) Parameter Infrared Emitting Diode Forward Voltage Reverse Current Capacitance VF IR CJ IF = 10mA VR = 3V V = 0, f = 1MHZ - - - 1.1 - 50 1.5 10 - V mA pf Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TA = +25C, unless otherwise specified) Parameter Phototransistor Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Dark Current Capacitance Coupled Characteristics DC Current Transfer Ratio Collector-Emitter Saturation Voltage Isolation Resistance Input to Output Capacitance Switching Speeds CTR R(I-O) C(I-O) tr, tf IF = 10mA, VCE = 10V V(I-O) = 500VDC V(I-O) = 0, f = 1MHZ VCE = 10V, RL = 100 ICE = 2mA ICB = 50A 6 100 100 - - - - - - - 5 3 - - - 2 - - % V G pf s s VCEO(sat) IF = 60mA, IC = 1.6mA V(BR)CEO IC = 10mA, IF = 0 V(BR)CBO IC = 100A, IF = 0 V(BR)ECO IE = 100A, IF = 0 ICEO CJ VCE = 10V, IF = 0 VCE = 10V, f = 1MHZ 30 70 7 - - - - - 5 2 - - - 50 - V V V nA pf Symbol Test Conditions Min Typ Max Unit Pin Connection Diagram Anode Cathode N.C. 1 2 3 6 Base 5 Collector 4 Emitter 6 5 4 .260 (6.6) Max 1 2 3 .070 (1.78) Max .350 (8.89) Max .200 (5.08) Max .300 (7.62) .350 (8.89) Max .085 (2.16) Max .100 (2.54) |
Price & Availability of NTE3040
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