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| High Voltage Transistors COMCHIP www.comchiptech.com MMBTA42, MMBTA43 NPN Silicon Type Features This device is designed for application as a video output to drive color CRT and other high voltage applications SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Top View .056 (1.40) .047 (1.20) 3 2 EMITTER .020 (0.5) .020 (0.5) .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC MMBTA42 300 300 6.0 500 MMBTA43 200 200 6.0 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD Max 225 1.8 RqJA PD 556 300 Unit mW mW/C C/W mW 2.4 RqJA TJ, Tstg 417 -55 to +150 mW/C C/W C MDS0605002A Page 1 .044 (1.10) .035 (0.90) 1 BASE .006 (0.15) .002 (0.05) .037(0.95) .037(0.95) .006 (0.15)max. COLLECTOR 3 1 2 High Voltage Transistors COMCHIP www.comchiptech.com ELECTRICAL CHARACTERISTICS (TA = 25OC unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector -Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MMBTA42 MMBTA43 fT Ccb - - 3.0 4.0 50 - MHz pF hFE Both Types Both Types MMBTA42 MMBTA43 VCE(sat) MMBTA42 MMBTA43 VBE(sat) - - - 0.5 0.5 0.9 Vdc 25 40 40 40 - - - - Vdc - MMBTA42 MMBTA43 IEBO MMBTA42 MMBTA43 - - 0.1 0.1 V(BR)CEO MMBTA42 MMBTA43 V(BR)CBO MMBTA42 MMBTA43 V(BR)EBO ICBO - - 0.1 0.1 mAdc 300 200 6.0 - - - Vdc mAdc 300 200 - - Vdc Vdc Symbol Min Max Unit MDS0605002A Page 2 High Voltage Transistors COMCHIP www.comchiptech.com Rating and Characteristic Curves (MMBTA42, MMBTA43) 120 100 hFE , DC CURRENT GAIN TJ = +125C VCE = 10 Vdc 80 60 40 -55C 20 0 25C 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 Figure 1. DC Current Gain Ceb @ 1MHz C, CAPACITANCE (pF) BANDWIDTH (MHz) f T, CURRENT-GAIN 100 80 70 60 50 40 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) TJ = 25C VCE = 20 V f = 20 MHz 50 70 100 10 1.0 Ccb @ 1MHz 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance Figure 3. Current-Gain - Bandwidth 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 VCE(sat) @ 25C, IC/IB = 10 VCE(sat) @ 125C, IC/IB = 10 VCE(sat) @ -55C, IC/IB = 10 VBE(sat) @ 25C, IC/IB = 10 VBE(sat) @ 125C, IC/IB = 10 VBE(sat) @ -55C, IC/IB = 10 VBE(on) @ 25C, VCE = 10 V VBE(on) @ 125C, VCE = 10 V VBE(on) @ -55C, VCE = 10 V Figure 4. "ON" Voltages MDS0605002A Page 3 |
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