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| MMBT4403 Switching Transistor PNP Silicon 1 BASE 2 EMITTER COLLECTOR 3 3 1 SOT-23 2 M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40 -5.0 -600 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD R qJA PD R qJA TJ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/ C C/W mW mW/ C C/W C Device Marking MMBT4403=2T Electrical Characteristics Off Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage(3) (IC=-1.0mAdc.IB=0) Collector-Base Breakdown Voltage (IC=-0.1mAdc, IE=0) Emitter-Base Breakdown Voltage (IE=-0.1mAdc, IC=0) Base Cutoff Current (VCE=-35 Vdc, VEB =-0.4 Vdc) Collector Cutoff Current (VCE=-35Vdc, VEB=-0.4Vdc) 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. 3.Pulse Test:Pulse Width <300 S, Duty Cycle <2.0%. = = V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX -40 -40 -5.0 -0.1 -0.1 Vdc Vdc Vdc uAdc uAdc - http://www.weitron.com.tw WEITRON MMBT4403 Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit On Characteristics (3) DC Current Gain (IC= -0.1 mAdc, VCE= -1.0Vdc) (IC= -1.0 mAdc, VCE= -1.0 Vdc) (IC= -10 mAdc, VCE= -1.0Vdc) (3) (IC= 150 mAdc, VCE= -2.0Vdc) (IC= -500 mAdc, VCE= -2.0Vdc) HFE 30 60 100 100 20 VCE(sat) -0.75 300 - (3) Collector-Emitter Saturation Voltage (3) (IC= -150 mAdc, IB= -15mAdc) (IC= -500 mAdc, IB= -50mAdc) Base-Emitter Saturation Voltage (3) (IC= -150 mAdc, IB= -15 mAdc) (IC= -500 mAdc, IB= -50 mAdc) -0.4 -0.75 -0.95 -1.3 Vdc VBE(sat) Vdc Small-signal Characteristics Current-Gain-Bandwidth Product (4) (IC= -20 mAdc, VCE= -10 Vdc, f=100MHz) Collector-Base Capacitance (VCB= -10 Vdc, IE=0, f=1.0MHz) Emitter-Base Capacitance (VEB= -0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (VCE= -10 Vdc IC=-1.0 mAdc, f=1.0 kHz) Voltage Feeback Radio (VCE= -10Vdc IC=-1.0 mAdc, f=1.0 kHz) Small-Signal Current Gain (VCE= -10Vdc IC=-1.0 mAdc, , f=1.0 kHz) Output Admittance (VCE= -10Vdc IC=-1.0 mAdc, f=-1.0kHz) fT Ccb Ceb hie hre hfe hoe 200 1.5 0.1 60 1.0 8.5 30 15 8 500 100 MHz pF pF k ohms x 10-4 mhos Switching Characteristics Delay Time Rise Time Storage Time Fall Time (Vcc= -30 Vdc, VEB= -2.0 Vdc Ic= -150 mAdc, IB1= -15 mAdc) (Vcc= -30 Vdc, Ic= -150 mAdc, IB1=IB2= -15 mAdc) td tr ts tf 15 20 225 30 ns ns http://www.weitron.com.tw WEITRON MMBT4403 S W IT C HING T IME E QUIVA L E NT T E S T C IR C UIT - 30 V < 2 ns +2 V 0 - 16 V 1.0 k W 10 to 100ms, DUTY CYCLE = 2% CS * < 10 pF 200 W +14 V 0 -16 V < 20 ns 1.0 kW 1.0 to 100 s, m DUTY CYCLE = 2% - 30 V 200W CS * < 10 pF + 4.0 V S cope ris e time < 4.0 ns *Total s hunt capacitance of tes t jig connectors , and os cillos cope F igure 1. Turn-On T ime F igure 2. Turn-Off T ime TRANSIENTCHARACTERISTICS 25 C 30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 Q, CHARGE (nC) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 0.1 10 20 105 C VCC = 30 V IC/IB = 10 10 7.0 5.0 Ccb QT QA 200 300 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 Figure 3. Capacitances Figure 4. Charge Data 100 70 50 t, TIME (ns) 30 20 tr @ V CC = 30 V tr @ V CC = 10 V td @ V BE(off) = 2 V td @ V BE(off) = 0 IC/IB = 10 tr, RISE TIME (ns) 100 70 50 30 20 VCC = 30 V IC/IB = 10 10 7.0 5.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) Figure 5. T urn-On T ime Figure 6. Rise Time WEITRON http://www.weitron.com.tw MMBT4403 200 IC/IB = 10 ts4 ST , ORAGE TIME (ns) 100 70 50 IB1 = IB2 ts4= ts - 1/8 tf 30 20 10 IC/IB = 20 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 7. Storage T ime h P ARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25 C This group of graphs illustrates the relationship between hfe and other " h " parameters for this series of transistors. To 1000 700 500 hfe , CURRENT GAIN 300 200 MMBT4403 UNIT 1 MMBT4403 UNIT 2 obtain these curves, a highgain and a lowgain unit were selected from the MMBT4403LT1 lines, and the same units were used to develop the correspondinglynumbered curves on each graph. hie , INPUT IMPEDANCE (OHMS) 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403 UNIT 1 MMBT4403 UNIT 2 100 70 50 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mAdc) Figure 10. Current Gain IC, COLLECTOR CURRENT (mAdc) Figure 1 1. Input Impedance hre , VOLT AGE FEEDBACK RATIO (X 10 -4 ) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 MMBT4403 UNIT 1 MMBT4403 UNIT 2 hoe , OUTPUT ADMITTANCE ( umhos) 20 500 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403 MMBT4403 UNIT 1 UNIT 2 2.0 3.0 5.0 7.0 10 IC , COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance http://www.weitron.com.tw WEITRON MMBT4403 S TAT IC C HA R A C T E R IS T IC S hFE, NORMALIZED CURRENT GAIN 3.0 2.0 VCE = 1.0 V VCE = 10 V TJ = 125 C 25 C 1.0 0.7 0.5 0.3 0.2 0.1 - 55 C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 I C, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 Figure 14. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 1.0 0.8 TJ = 25 C COEFFICIENT (mV/ C) VBE(sat) @ I C/IB = 10 VBE(sat) @ V CE = 10 V 0.5 0 VC for VCE(sat) 0.5 1.0 1.5 2.0 2.5 0.1 0.2 VS for VBE 50 100 200 0.5 1.0 2.0 5.0 10 20 I C, COLLECTOR CURRENT (mA) VOLTAGE (VOLTS) 0.6 0.4 0.2 VCE(sat) @ I C/IB = 10 0 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 I C, COLLECTOR CURRENT (mA) 500 500 Figure 16. On V oltages " " Figure 17. T emperature Coefficients WEITRON http://www.weitron.com.tw MMBT4403 SOT-23 Package Outline Dimensions A Unit:mm TOP VIEW B C E G H D K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw |
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