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FDS2734 Single N-Channel UItraFET Trench(R) MOSFET
August 2006
FDS2734 N-Channel UItraFET Trench(R) MOSFET
250V, 3.0A, 117m
Features
Max rDS(on) =117m at VGS =10V, ID = 3.0A Max rDS(on) =126m at VGS = 6V, ID = 2.8A Fast switching speed High performance trench low rDS(on) technology for extremely
tm
General Descriptions
This single N-Channel MOSFET is produced using Fairchild Semiconductor's advanced UItraFET Trench(R) process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
DC-DC conversion
High power and current handling capability RoHS compliant
D SO-8
D
D
D
5 6 4 3 2 1
Pin 1
S
S
S
G
7 8
MOSFET Maximum Ratings
Symbol VDS VGS ID EAS PD TJ, TSTG Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed
TA = 25C unless otherwise noted Parameter Ratings 250 20 (Note 1a) (Note 3) (Note 1a) (Note 1b) 3.0 50 12.5 2.5 1.0 -55 to 150 Units V V A mJ W
o
Single Pulse Avalanche Energy Power dissipation Power dissipation Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction- to -Ambient Thermal Resistance, Junction- to- Ambient Thermal Resistance, Junction -to- Case (Note 1a) (Note 1b) (Note 1) 50 125 25
oC/W
Package Marking and Ordering Information
Device Marking FDS2734 Device FDS2734 Package SO-8 Reel Size 13'' Tape Width 12mm Quantity 2500 units
(c)2006 Fairchild Semiconductor Corporation FDS2734 Rev. B
1
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FDS2734 Single N-Channel UItraFET Trench(R) MOSFET
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to VDS = 200V,VGS=0 V 25oC 250 157 1 10 100 V mV/oC A nA
VDS = 200V, VGS = 0V TJ = 55oC VGS = 20V, VDS =0 V
On Characteristics (Note 2)
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to VGS = 10V, ID = 3.0A, VGS = 6V , ID = 2.8A, VDS=10V, ID =3.0A, VGS = 10V, ID = 3.0A, TJ = 125oC 25oC 2 3 -10.7 97 101 205 15.1 117 126 225 S m 4 V mV/c
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 100V, VGS = 0V, f = 1MHz f = 1MHz 1960 85 26 0.7 2610 130 40 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain Charge VDS = 125V, VGS = 10V ID = 3.0A VDD = 125V, ID = 3A VGS = 10V, RGS = 6 23 11 40 11 32 9 8 37 19 64 19 45 ns ns ns ns nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 3.0A IF = 3.0 A, diF/dt = 100A/s 0.74 72 185 1.2 108 278 V ns nC
Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50C/W when mounted on a 1in2 pad of 2 oz copper
b) 125C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2: Pulse Test Width <300s, Duty Cycle <2%. 3: Starting TJ = 25C, L = 1mH, IAS = 5A, VDD = 100V, VGS = 10V
2 FDS2734 Rev. B
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FDS2734 Single N-Channel UItraFET Trench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
50 40 30 20 10 0
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS- Descending Order VGS = 10V 8V 6V 5V
2.5
VGS = 5V VGS = 4.5V
ID, DRAIN CURRENT (A)
2.0
VGS = 6V
1.5
VGS = 10V VGS = 8V
1.0
0
2 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V)
10
0.5
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
0
10 20 30 ID, DRAIN CURRENT(A)
40
50
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
0.4
rDS(on), ON-RESISTANCE (m)
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
2.8 2.4 2.0 1.6 1.2 0.8 0.4 -50
ID = 3.0A VGS = 10V
ID =3A
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
0.3
TJ = 150oC
0.2
0.1
TJ = 25oC
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC)
150
0.0
3
4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On Resistance vs Junction Temperature
20
ID, DRAIN CURRENT (A)
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
Figure 4. On-Resistance vs Gate to Source Voltage
100
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
15
10
TJ = 150oC
10
TJ = 150oC TJ = 25oC
1
TJ = 25oC TJ = -55oC
5
TJ = -55oC
0
2
3 4 5 VGS, GATE TO SOURCE VOLTAGE (V)
6
0.1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
3 FDS2734 Rev. B
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FDS2734 Single N-Channel UItraFET Trench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
10 8
VDD = 50V VDD = 125V
VGS, GATE TO SOURCE VOLTAGE(V)
5000
Ciss f = 1MHz VGS = 0V
6 4 2 0
VDD = 200V
CAPACITANCE (pF)
1000
Coss
100
Crss
0
10 20 30 Qg, GATE CHARGE(nC)
40
10 0.1
1 10 VDS,DRAIN TO SOURCE VOLTAGE (V)
100
Figure 7. Gate Charge Characteristics
10
IAS, AVALANCHE CURRENT (A)
Figure 8. Capacitance vs Drain to Source Voltage
3.5 3.0
ID, DRAIN CURRENT (A)
2.5 2.0 1.5 1.0 0.5 0.0 25
RJA = 50oC/W VGS = 6V
VGS = 10V
TJ = 25oC
1
TJ = 125oC
0.1 1E-3
0.01
0.1
1
10
100
50
75
100
125
150
tAV, TIME IN AVALANCHE (mS)
TA, AMBIENT TEMPERATURE(oC)
Figure 9. Unclamped Inductive Switching Capability
10
ID, DRAIN CURRENT (A)
2
Figure 10. Maximum Continuous Drain Current vs Ambient Temperature
P(PK), PEAK TRANSIENT POWER (W)
10
4
10us
TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK
10 10 10 10 10
1
10
3
CURRENT AS FOLLOWS:
0
I = I25
1ms 10ms 100ms 1s
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on)
-1
150 - T A ----------------------125
10
2
-1
VGS = 10V
-2
-3
SINGLE PULSE TJ = MAX RATED TA = 25oC
DC
10
1
SINGLE PULSE
10
10
0
10
1
10
2
10
3
10 -3 10
0
10
-2
10
-1
10
0
10
1
10
2
10
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
4 FDS2734 Rev. B
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FDS2734 Single N-Channel UItraFET Trench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
4
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL IMPEDANCE, ZJA
D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01
1
PDM
1E-3 1E-4
SINGLE PULSE
t1 t2
1E-5 -4 10
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA
10
-3
10 10 10 t, RECTANGULAR PULSE DURATION(s)
-2
-1
0
10
1
10
2
10
3
Figure 13. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b Transient thermal response will change depending on the circuit board design
5 FDS2734 Rev. B
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I20

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