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| Transistors DTC114TM / DTC114TE / DTC114TUA DTC114TKA / DTC114TSA Digital transistors (built-in resistor) DTC114TM / DTC114TE / DTC114TUA / DTC114TKA / DTC114TSA Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. Equivalent circuit C B R1 E B : Base C : Collector E : Emitter Structure NPN digital transistor (With single built in resistor) External dimensions (Unit : mm) DTC114TM 0.2 1.2 0.32 DTC114TE 1.2 0.8 (2) (3) (1) 1.60.2 1.00.1 0.2 0.4 0.4 0.8 +0.1 0.2-0.05 (1) 0.5 0.5 +0.1 0.2-0.05 0.80.1 1.60.2 0.70.1 0.550.1 0.5 0.22 (2) 0~0.1 0.13 0~0.1 0.15Max. ROHM : VMT3 ROHM : EMT3 +0.1 0.3 -0.05 0.150.05 Abbreviated symbol : 04 Abbreviated symbol : 04 DTC114TUA 2.00.2 1.30.1 0.65 0.65 (1) (2) 1.250.1 2.10.1 DTC114TKA 0.90.1 0.2 0.70.1 (1) 0~0.1 2.90.2 1.90.2 0.95 0.95 (2) 1.6+0.2 -0.1 2.80.2 1.1+0.2 -0.1 0.80.1 0.1Min. (1) Base (2) Emitter (3) Collector (3) (1) Emitter (2) Base (3) Collector 0~0.1 (3) ROHM : UMT3 EIAJ : SC-70 Abbreviated symbol : 04 (1) Emitter (2) Base (3) Collector 0.3Min. 0.3+0.1 0.150.05 -0 All terminals have same dimensions 0.1Min. (3) +0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals have same dimensions ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector Abbreviated symbol : 04 DTC114TSA 30.2 40.2 20.2 (15Min.) 0.45+0.15 -0.05 3Min. 5 2.5 +0.4 -0.1 0.5 0.45 +0.15 -0.05 ROHM : SPT EIAJ : SC-72 (1) (2) (3) (1) Emitter (2) Collector (3) Base Rev.A 1/3 Transistors Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol M VCBO VCEO VEBO IC PC Tj Tstg 150 DTC114TM / DTC114TE / DTC114TUA DTC114TKA / DTC114TSA Limits(DTA114T E UA 50 50 5 100 200 150 -55 to +150 300 KA ) SA V V V mA mW C C Unit Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency Transition frequency of the device Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT Min. 50 50 5 - - - 100 7 - Typ. - - - - - - 250 10 250 Max. - - - 0.5 0.5 0.3 600 13 - Unit V V V A A V - k MHz IC=50A IC=1mA IE=50A VCB=50V VEB=4V Conditions IC/IB=10mA/1mA VCE=5V, IC=1mA - VCE=10V, IE=-5mA, f=100MHz Packaging specifications Package Package type Code Basic ordering unit (pieces) VMT3 Taping EMT3 Taping UMT3 Taping SMT3 Taping SPT Taping T2L 8000 TL 3000 - T106 3000 - - T146 3000 - - - TP 5000 - - - - Type DTC114TM DTC114TE DTC114TUA DTC114TKA DTC114TSA - - - - - - - - - - Rev.A 2/3 Transistors Electrical characteristic curves COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DTC114TM / DTC114TE / DTC114TUA DTC114TKA / DTC114TSA VCE=5V 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta=100C 25C -40C lC/lB=10 1k 500 DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta=100C 25C -40C COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage vs. collector current Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
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