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| AP9915K Advanced Power Electronics Corp. Simple Drive Requirement Lower Gate Charge Fast Switching Characteristic D SOT-223 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S 20V 50m 6.2A ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 12 6.2 5 30 3.2 0.025 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 40 Unit /W Data and specifications subject to change without notice 200323041 AP9915K Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.03 13 5 1 2 8 55 10 3 360 70 50 0.78 Max. Units 50 80 1.2 1 25 100 8 580 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70oC) VGS=4.5V, ID=6A VGS=2.5V, ID=4A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS=12V ID=10A VDS=16V VGS=4.5V VDS=10V ID=10A RG=3.3,VGS=5V RD=1 VGS=0V VDS=20V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=2.5A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/s Min. - Typ. 17 9 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2 3.t10sec , Surface mounted on 1 in copper pad of FR4 board. AP9915K 50 40 T A =25 C 40 o T A =150 o C 4.5V ID , Drain Current (A) 30 ID , Drain Current (A) 4.5V 30 3.5V 20 20 3.5V 10 2.5V V G =1.5V 10 2.5V V G =1.5V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 1.8 ID=4A 70 I D =6A 1.6 T A =25 o C Normalized R DS(ON) V G =4.5V 1.4 RDS(ON) (m ) 60 1.2 50 1.0 40 0.8 20 0.6 1 2 3 4 5 6 -50 0 50 100 150 30 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 100 10 0.95 VGS(th) (V) IS (A) 1 0.7 T j =150 C 0.1 o T j =25 o C 0.45 0.01 0 0.4 0.8 1.2 0.2 -50 0 50 100 150 V SD , Source -to-Drain Voltage (V) T j , Junction Temperature ( C ) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9915K f=1.0MHz 14 1000 VGS , Gate to Source Voltage (V) 12 I D =6A V DS =16V V DS =12V V DS =10V C (pF) 100 C iss 10 8 6 C oss C rss 4 2 0 0 2 4 6 8 10 12 14 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10 0.1 0.1 0.05 1ms ID (A) 1 0.02 0.01 0.1 T A =25 o C Single Pulse 0.01 0.1 1 10 10ms 100ms 1s 10s DC Single Pulse PDM 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=90oC/W Per Unit Base 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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