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Rev 3: June 2005
AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7801 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM. Standard Product AO7801 is Pb-free (meets ROHS & Sony 259 specifications). AO7801L is a Green Product ordering option. AO7801 and AO7801L are electrically identical.
SC-70-6 (SOT-323) Top View S1 G1 D2 D1 G2 S2 G1 S1
Features
VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 520m (VGS = -4.5V) RDS(ON) < 700m (VGS = -2.5V) RDS(ON) < 950m (VGS = -1.8V)
D1
D2
G2 S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation A TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=25C TA=70C ID IDM PD TJ, TSTG
Maximum -20 8 -0.6 -0.48 -3 0.3 0.19 -55 to 150
Units V V A
W C
Symbol
A A
t 10s Steady-State Steady-State
RJA RJL
Typ 360 400 300
Max 415 460 350
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO7801. AO7801L
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, V DS=-5V VGS=-4.5V, I D=-0.6A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-2.5V, I D=-0.5A VGS=-1.8V, I D=-0.4A gFS VSD IS Forward Transconductance VDS=-5V, ID=-0.6A Diode Forward Voltage IS=-0.5A,VGS=0V Maximum Body-Diode Continuous Current -0.5 -3 400 542 540 700 1.7 -0.86 -1 -0.4 114 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 17 14 12 1.44 VGS=-4.5V, V DS=-10V, I D=-0.6A 0.14 0.35 6.5 VGS=-4.5V, V DS=-10V, RL=16.7, RGEN=3 IF=-0.6A, dI/dt=100A/s IF=-0.6A, dI/dt=100A/s 6.5 18.2 5.5 10 3 13 17 1.8 140 520 700 700 950 -0.6 Min -20 -1 -5 10 -0.9 Typ Max Units V A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO7801. AO7801L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6 -10V -6V -4.5V -4V 4 -ID (A) -3V 2 -2.5V VGS=-2.0V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 900 800 RDS(ON) (m) 700 600 500 400 300 0 1 2 3 4 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 900 800 700 600 500 400 300 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C -IS (A) ID=-0.6A 1.0E+00 1.0E-01 125C 1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.4 0.8 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics RDS(ON) (m) VGS=-4.5V Normalized On-Resistance VGS=-1.8V 1.6 1 -3.5V -ID(A) 2 3 125C 4 25C VDS=-5V
0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics
VGS=-1.8V ID=-0.4A
1.4
VGS=-2.5V
VGS=-2.5V ID=-0.5A VGS=-4.5V ID=-0.6A
1.2
1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
AO7801. AO7801L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0.0 0.5 1.0 1.5 2.0 -Qg (nC) Figure 7: Gate-Charge Characteristics 200 VDS=-10V ID=-0.6A Capacitance (pF) 150 Ciss
100 Coss 50 Crss
0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics
10.00
TJ(Max)=150C, TA=25C RDS(ON) limited 1ms 10ms 0.1s 1s 10s DC
14 10s 100s Power (W) 12 10 8 6 4 2
1.00 -ID (Amps)
TJ(Max)=150C TA=25C
0.10
0.01
0.00 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=415C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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