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TLS.210.
Vishay Semiconductors
Symbol LED in 2 x 5 mm Flat and Tinted Top-Diffused Package
Color Red Yellow Green Type TLSH210. TLSY210. TLSG210. Technology GaAsP on GaP GaAsP on GaP GaP on GaP Angle of Half Intensity o 50 50 50
Description
This series was developed for use as compact surface display. It is housed in a 2x5 mm rectangular molded package. This device has a flat tinted, top diffused package for uniform brightness when used in panels. The symbol LEDs are available in three bright colors: high efficiency red, yellow and green.
Features
D D D D D D D D
Choice of three bright colors Uniform illumination Luminous intensity selected into groups Suitable for DC and pulse operation Flat light emitting surface Direct symbol indication is possible Yellow and green color categorized Wide viewing angle
96 11498
Applications
Status lights Background illumination Maintenance lights Indicator of audio and visual equipment Off / On indicator Readout lights Legend lights Illumination of moving boards
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified TLSH210. ,TLSY210. ,TLSG210. , Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Test Conditions Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 30 1 100 100 -40 to +100 -55 to +100 260 350 Unit V mA A mW C C C C K/W
tp 10 ms Tamb 65C
t 5 s, 2 mm from body
Document Number 83050 Rev. A3, 05-Oct-00
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TLS.210.
Vishay Semiconductors Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified Red (TLSH210. ) Parameter Luminous intensity 1) Test Conditions IF = 10 mA Type TLSH2100 TLSH2101 Symbol IV IV ld lp VF VR Cj Min 0.63 1 Typ 2 2.5 640 650 50 2 15 50 Max Unit mcd mcd nm nm deg V V pF
Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V
3
6
v
Yellow (TLSY210. ) Parameter Luminous intensity 1) Test Conditions IF = 10 mA Type TLSY2100 TLSY2101 Symbol IV IV ld lp VF VR Cj Min 0.63 1 581 Typ 2 2 585 50 2.4 15 50 Max Unit mcd mcd nm nm deg V V pF
Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V
594
3
6
v
Green (TLSG210. ) Parameter Luminous intensity 1) Test Conditions IF = 10 mA Type TLSG2100 TLSG2101 Symbol IV IV ld lp VF VR Cj Min 1 1.6 562 Typ 2 2.5 565 50 2.4 15 50 Max Unit mcd mcd nm nm deg V V pF
Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half intensity IF = 10 mA Forward voltage IF = 20 mA Reverse voltage IR = 10 mA Junction capacitance VR = 0, f = 1 MHz 1) in one Packing Unit I Min./ I Max. 0.5 V V
575
3
6
v
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Document Number 83050 Rev. A3, 05-Oct-00
TLS.210.
Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified)
125 Iv rel - Relative Luminous Intensity PV - Power Dissipation ( mW ) 0 10 20 30
100
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
75
50 25 0 0 20 40 60 80 100
95 10918
Tamb - Ambient Temperature ( C )
95 10082
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
1000 Red IF - Forward Current ( mA )
60 IF - Forward Current ( mA ) 50 40 30 20 10 0 0
95 10046
100 tp/T=0.001 tp=10ms
10
1
0.1 20 40 60 80 100
96 11593
0
2
4
6
8
10
Tamb - Ambient Temperature ( C )
VF - Forward Voltage ( V )
Figure 2. Forward Current vs. Ambient Temperature
10000 Iv rel - Relative Luminous Intensity IF - Forward Current ( mA )
Figure 5. Forward Current vs. Forward Voltage
1.6 Red 1.2
1000
tp/T=0.01
0.02 0.05
0.1 100 0.2 0.5 1 10 Tamb 1 0.01 0.1 1
0.8
0.4
v65C
10 100
0 0
96 11594
IF=10mA 20 40 60 80 100 Tamb - Ambient Temperature ( C )
95 10079
tp - Pulse Length ( ms )
Figure 3. Forward Current vs. Pulse Length
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83050 Rev. A3, 05-Oct-00
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TLS.210.
Vishay Semiconductors
2.4 Iv rel - Relative Luminous Intensity Red IF - Forward Current ( mA ) 2.0 1.6 1.2 0.8 0.4 IFAV=10mA, const. 0 10
96 11595
1000 Yellow 100 tp/T=0.001 tp=10ms
10
1
0.1 20 0.5 50 0.2 100 0.1 200 0.05 500 0.02 IF(mA) tp/T
95 10030
0
2
4
6
8
10
1
VF - Forward Voltage ( V )
Figure 7. Rel. Lumin. Intensity vs. Forw. Current / Duty Cycle
10 Iv rel - Relative Luminous Intensity
Figure 10. Forward Current vs. Forward Voltage
1.6 Iv rel - Relative Luminous Intensity Red Yellow 1.2
1
0.8
0.1
0.4
0.01 1
96 11596
0 10 IF - Forward Current ( mA ) 100
95 10031
IF=10mA 0 20 40 60 80 100 Tamb - Ambient Temperature ( C )
Figure 8. Relative Luminous. Intensity vs.Forward. Current
Figure 11. Rel. Luminous Intensity vs Ambient Temperature
2.4
1.2 Iv rel - Relative Luminous Intensity Red 1.0 0.8 0.6 0.4 0.2 0 600
96 11597
Iv rel - Relative Luminous Intensity
Yellow 2.0 1.6 1.2 0.8 0.4 0
620
640
660
680
700
95 10260
10 1
20 0.5
50 0.2
100 0.1
200 0.05
500 0.02
IF(mA) tp/T
l - Wavelength ( nm )
Figure 9. Relative Luminous. Intensity vs.Wavelength
Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
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Document Number 83050 Rev. A3, 05-Oct-00
TLS.210.
Vishay Semiconductors
10 Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity Yellow 1 1.6 Green 1.2
0.8
0.1
0.4 IF=10mA 0 20 40 60 80 100
0.01 1
95 10033
0 10 IF - Forward Current ( mA ) 100
95 10035
Tamb - Ambient Temperature ( C )
Figure 13. Relative Luminous Intensity vs. Forward Current
1.2 Iv rel - Relative Luminous Intensity Iv rel- Specific Luminous Intensity Yellow 1.0 0.8 0.6 0.4 0.2 0 550
95 10039
Figure 16. Rel. Luminous Intensity vs. Ambient Temperature
2.4 Green 2.0 1.6 1.2 0.8 0.4 0
570
590
610
630
650
95 10263
10
20
50
100
200
500
l - Wavelength ( nm )
IF - Forward Current ( mA )
Figure 14. Relative Luminous Intensity vs. Wavelength
Figure 17. Specific Luminous Intensity vs. Forward Current
1000 Green IF - Forward Current ( mA ) 100 Iv rel - Relative Luminous Intensity
10 Green
1
10 tp/T=0.001 tp=10ms
0.1
1
0.1 0
95 10034
0.01 2 4 6 8 10
95 10037
1
10 IF - Forward Current ( mA )
100
VF - Forward Voltage ( V )
Figure 15. Rel. Luminous Intensity vs . Ambient Temperature
Figure 18. Relative Luminous Intensity vs. Forward Current
Document Number 83050 Rev. A3, 05-Oct-00
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TLS.210.
Vishay Semiconductors
1.2 Iv rel - Relative Luminous Intensity Green 1.0 0.8 0.6 0.4 0.2 0 520
95 10038
540
560
580
600
620
l - Wavelength ( nm )
Figure 19. Relative Luminous Intensity vs. Wavelength
Dimensions in mm
95 11266
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Document Number 83050 Rev. A3, 05-Oct-00
TLS.210.
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 83050 Rev. A3, 05-Oct-00
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