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| Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES * Low forward volt drop * Fast switching * Soft recovery characteristic * Reverse surge capability * High thermal cycling performance * Isolated mounting tab BYV72EF series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V a1 1 k2 a2 3 VF 0.9 V IO(AV) = 20 A IRRM = 0.2 A trr 28 ns GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV72EF series is supplied in the conventional leaded SOT199 package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) isolated SOT199 case 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS BYV72EF Ths 125C -40 MIN. -150 150 150 150 20 30 150 160 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A C C IRRM IRSM Tstg Tj square wave = 0.5; Ths 78 C t = 25 s; = 0.5; Ths 78 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 s; = 0.001 per diode Non-repetitive peak reverse tp = 100 s current per diode Storage temperature Operating junction temperature 1 Neglecting switching and reverse current losses. July 1998 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k MIN. - BYV72EF series MAX. 8 UNIT kV ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF THERMAL RESISTANCES SYMBOL Rth j-hs PARAMETER Thermal resistance junction to heatsink CONDITIONS both diodes conducting with heatsink compound without heatsink compound per diode with heatsink compound without heatsink compound in free air MIN. TYP. 35 MAX. 4.0 8.0 5.0 9.0 UNIT K/W K/W K/W K/W K/W Rth j-a Thermal resistance junction to ambient ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 C unless otherwise stated SYMBOL VF IR Qs trr1 trr2 Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Reverse recovery time Forward recovery voltage CONDITIONS IF = 15 A; Tj = 150C IF = 15 A IF = 30 A VR = VRWM; Tj = 100 C VR = VRWM IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 0.83 0.95 1.00 0.5 10 6 20 13 1 MAX. 0.90 1.05 1.20 1 100 15 28 22 UNIT V V V mA A nC ns ns V July 1998 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV72EF series I dI F dt F 0.5A IF t rr time 0A I rec = 0.25A IR trr2 Q I R I s 10% 100% rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm Fig.4. Definition of trr2 I F 25 PF / W Vo = 0.7050 V Rs = 0.0130 Ohms BYV72 Ths(max) / C D = 1.0 25 20 0.5 15 50 time 0.1 0.2 75 VF V VF time fr 10 I tp D= tp T 100 5 T t 125 0 0 5 10 15 IF(AV) / A 20 150 25 Fig.2. Definition of Vfr Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D. PF / W Vo = 0.705 V Rs = 0.013 Ohms R 20 BYV72 Ths(max) / C 50 a = 1.57 15 1.9 2.2 2.8 10 4 100 75 D.U.T. Voltage Pulse Source Current shunt 5 125 to 'scope 0 0 5 IF(AV) / A 10 150 15 Fig.3. Circuit schematic for trr2 Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). July 1998 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV72EF series trr / ns 1000 100 Qs / nC IF=20A 10A 5A 2A 1A 10 IF=20A 100 IF=1A 10 1 1 10 dIF/dt (A/us) 100 1.0 1.0 10 -dIF/dt (A/us) 100 Fig.7. Maximum trr at Tj = 25 C; per diode Fig.10. Maximum Qs at Tj = 25 C; per diode 10 Irrm / A 10 Transient thermal impedance, Zth j-hs (K/W) IF=20A 1 1 IF=1A 0.1 0.1 0.01 P D tp D= tp T t 0.01 1 10 -dIF/dt (A/us) 100 0.001 1us T 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYV42F/EX Fig.8. Maximum Irrm at Tj = 25 C; per diode Fig.11. Transient thermal impedance; per diode; Zth j-hs = f(tp). 50 IF / A Tj = 150 C 40 Tj = 25 C 30 20 typ 10 max 0 0 0.5 VF / V 1.0 1.5 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj July 1998 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged MECHANICAL DATA Dimensions in mm Net Mass: 5.5 g BYV72EF series 15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2 5.2 max o 45 seating plane 3.5 3.5 max not tinned 15.7 min 1 2.1 max 2 3 1.2 1.0 5.45 0.7 max 0.4 M 2.0 5.45 Fig.12. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 5 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYV72EF series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 6 Rev 1.100 |
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